DATE DRAWN Jan.-31-'05 CHECKED Jan.-31-'05 Jan.-31-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. SPECIFICATION Device Name : Power MOSFET Type Name : 2SK4004-01MR Spec. No. : MS5F5983 Date : Jan.-31-2005 Fuji Electric Device Technology Co.,Ltd. MS5F5983 a 1 / 18 H04-004-05 Date Jan.-31 2005 July.-3 2006 Classification Revision Index a Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. Revised Records Content Drawn Checked Checked Approved enactment Revised RDS(on)-tch graph. MS5F5983 a 2 / 18 H04-004-03 1.Scope This specifies Fuji Power MOSFET 2SK4004-01MR 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F Outview See to 8/18 page 5.Absolute Maximum Ratings at Tc=25 C (unless otherwise specified) Description Symbol Characteristics Unit VDS 500 V VDSX 500 V Continuous Drain Current ID 9.0 A Pulsed Drain Current IDP 36.0 A Gate-Source Voltage VGS 30 V Repetitive and Non-repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy VGS=-30V IAR 9.0 A Note *1 EAS 349 mJ Note *2 EAR 4.8 mJ Note *3 Maximum Drain-Source dV/dt dVDS/dt 20 kV/s VDS500V Peak Diode Recovery dV/dt dV/dt 5 kV/s Note *4 Maximum Power Dissipation PD 48 W 2.16 Tc=25C Ta=25C Operating and Storage Tch 150 C Temperature range Tstg -55 to +150 C Isolation Voltage VISO 2 kVrms t=60sec f=60Hz 6.Electrical Characteristics at Tc=25 C (unless otherwise specified) Static Ratings Description Symbol Conditions min. typ. max. Unit 500 - - V V ID=250A Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance RDS(on) VGS=0V ID=250A VDS=VGS 2.5 - 3.5 VDS=500V Tch=25C VGS=0V - - 25 VDS=400V Tch=125C VGS=0V - - 250 - - 100 nA - 0.65 0.85 A VGS= 30V VDS=0V ID=4.5A VGS=10V Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. Drain-Source Voltage Remarks MS5F5983 a 3 / 18 H04-004-03 Dynamic Ratings Description Symbol Conditions min. typ. max. Unit VDS=25V 6.0 12.0 - S ID=4.5A Forward Transconductance g fs Input Capacitance Ciss VDS=25V - 800 1200 Output Capacitance Coss VGS=0V - 100 150 6.0 9 Reverse Transfer f=1MHz Capacitance Crss - td(on) Vcc=300V - 12 18 tr VGS=10V - 5.6 8.4 td(off) ID=4.5A - 40 60 Turn-Off Time tf RGS=10 - 8.0 12 Total Gate Charge QG Vcc=250V - 24 36 Gate-Source Charge QGS ID=9.0A - 7.0 10.5 Gate-Drain Charge QGD VGS=10V - 6.0 9.0 min. typ. max. Unit - 0.95 1.43 V - 0.5 - s - 4.5 - C min. typ. max. Unit Turn-On Time ns nC Reverse Diode Description Symbol Conditions IF=9.0A Diode Forward On-Voltage VSD VGS=0V Tch=25C IF=9.0A Reverse Recovery Time trr VGS=0V di / dt =100A/ s Reverse Recovery Charge Qrr Tch=25C 7.Thermal Resistance Description Symbol Channel to Case Rth(ch-c) 2.604 C/W Channel to Ambient Rth(ch-a) 58 C/W Note *1 : Tch150C, See Fig.1 and Fig.2 Note *2 : Starting Tch=25,IAS=4.0A,L=40.0mH,Vcc=50V,RG=50, SeeFi g. 1andFi g. 2 EAS limited by maximum channel temperature and avalanche current. See to the 'Maximum Avalanche Energy' graph of page 17/18. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Maximum Transient Thermal impedance' graph of page 18/18. Note *4 : IF-ID, di / dt =50A/ s, VccBVDSS,Tch150C Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. pF MS5F5983 a 4 / 18 H04-004-03 50 Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. Fig.1 Test circuit L D.U.T Vcc=50V Single Pulse Test Vcc Fig.2 Operating waveforms +10V VGS -15V IDP BVDSS 0 VDS ID MS5F5983 a 5 / 18 H04-004-03 8.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (852C,655%RH,16824hr) Heat treatment of soldering (Solder Dipping,2605C(265Cmax.),101sec,2 times) Test No. Test Items 1 Terminal Strength (Tensile) Mechanical test methods 3 Mounting Strength 4 Vibration 5 Shock 6 Solderability Reference Standard Pull force TO-220,TO-220F : 10N TO-3P,TO-3PF,TO-247 : 25N TO-3PL : 45N T-Pack,K-Pack : 10N Force maintaining duration :305sec Load force TO-220,TO-220F : 5N TO-3P,TO-3PF,TO-247 : 10N TO-3PL : 15N T-Pack,K-Pack : 5N Number of times :2times(90deg./time) Screwing torque value: (M3) TO-220,TO-220F : 4010Ncm TO-3P,TO-3PF,TO-247 : 5010Ncm TO-3PL : 7010Ncm frequency : 100Hz to 2kHz Acceleration : 200m/s 2 Sweeping time : 4min. 48min. for each X,Y&Z directions. Peak amplitude: 15km/s 2 Duration time : 0.5ms 3times for each X,Y&Z directions. Each terminal shall be immersed in the solder bath within 1 to 1.5mm from the body. 7 Resistance to Soldering Heat Sampling number EIAJ ED4701/400 method 401 15 EIAJ ED4701/400 method 401 15 EIAJ ED4701/400 method 402 15 EIAJ ED4701/400 method 403 15 EIAJ ED4701/400 method 404 15 Acceptance number (0:1) Solder temp. : 2455 C Immersion time : 50.5sec Solder temp. : 2605 C Immersion time : 101sec Number of times : 1times Fuji Electric Device Technology Co.,Ltd. ----- EIAJ ED4701/300 method 302 DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. 2 Terminal Strength (Bending) Testing methods and Conditions MS5F5983 15 15 a 6 / 18 H04-004-03 Test Items Testing methods and Conditions Reference Standard 1 High Temp. Storage Temperature : 150+0/-5C Test duration : 1000hr 2 Low Temp. Storage Temperature : -55+5/-0C Test duration : 1000hr 3 Temperature Humidity Storage 4 Temperature Humidity BIAS Temperature : 852C Relative humidity : 855% Test duration : 1000hr Temperature : 852C Relative humidity : 855% Bias Voltage : VDS (max) * 0.8 EIAJ ED4701/200 method 201 EIAJ ED4701/200 method 202 EIAJ ED4701/100 method 103 EIAJ ED4701/100 method 103 5 Unsaturated Pressurized Vapor Test duration : 1000hr Temperature : 1302C Relative humidity : 855% Vapor pressure : 230kPa Test duration : 48hr 6 Temperature Cycle High temp.side : 1505C/30min. Low temp.side : -555C/30min. 7 Thermal Shock RT : 5C 35C/5min. Number of cycles : 100cycles Fluid : pure water(running water) High temp.side : 100+0/-5C Low temp.side : 0+5/-0C Endurance test methods Duration time : HT 5min,LT 5min Number of cycles : 100cycles 8 Intermittent Operating Life 9 HTRB (Gate-source) 10 HTRB (Drain-Source) Tc =90degr ee TchTch(max.) Test duration : 3000 cycle Sampling number Acceptance number 22 22 22 22 (0:1) EIAJ ED4701/100 method 103 22 EIAJ ED4701/100 method 105 22 EIAJ ED4701/300 method 307 Temperature : Tch=150+0/-5C Bias Voltage : +VGS (max) EIAJ ED4701/100 method 106 EIAJ ED4701/100 Test duration : 1000hr Temperature : Tch=150+0/-5C Bias Voltage : VDS (max) method 101 EIAJ ED4701/100 Test duration : 1000hr method 101 22 22 (0:1) 22 22 Failure Criteria Symbols Failure Criteria Lower Limit Fuji Electric Device Technology Co.,Ltd. Unit Upper Limit Breakdown Voltage BVDSS LSL ----Zero gate Voltage Drain-Source Current IDSS ----USL Gate-Source Leakage Current IGSS ----USL Gate Threshold Voltage VGS(th) LSL USL Drain-Source on-state Resistance RDS(on) ----USL Forward Transconductance gfs LSL ----Diode forward on-Voltage VSD ----USL Marking Soldering ----With eyes or Microscope and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150C. DWG.NO. Electrical Characteristics Item Outview This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. Climatic test methods Test No. MS5F5983 V A A V S V ----- a 7 / 18 H04-004-03 DWG.NO. Fuji Electric Device Technology Co.,Ltd. MS5F5983 a 8 / 18 H04-004-03 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. 9. Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): Aerospace equipment Aeronautical equipment 10. Warnings The MOSFETs should be used in products within their absolute maximum rating(voltage, current, temperature, etc.). The MOSFETs may be destroyed if used beyond the rating. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Avalanche capability which can be assumed as abnormal condition .Please note the device may be destructed from the Avalanche over the specified maximum rating. The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc...). Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions. Be careful when handling MOSFETs for ESD damage. (It is an important consideration.) Whenhandl i ngMOSFET s , hol dt hembyt hec as e( p ac k age)anddon' t t ouc ht hel eadsandt er mi nal s . It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor and tablemats. Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment(Terminal devices) Machine tools AV equipment Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. MS5F5983 a 9 / 18 H04-004-03 Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. Installation Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Solder temperature and duration (through-hole package) Solder temperature 2605 C 35010 C Duration 101 seconds 3.50.5 seconds The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, be careful to avoid immersing the package in the solder bath. Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. Table 1: Recommended tightening torques. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL Screw Tightening torques M3 30 -50 Ncm M3 40 -60 Ncm M3 60 -80 Ncm Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the channel and case, but also for the outer leads. Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in order to avoid electric shock and burns. The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the spread of fire. The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) The MOSFETs should not used in an irradiated environment since they are not radiation-proof. Note flatness : < =30m roughness : <=10m Plane off the edges : C<=1.0mm MS5F5983 a 10 / 18 H04-004-03 Theheat s i nks houl dhav eaf l at nes swi t hi n30m andr oughnes swi t hi n10m. Al s o, k eept het i ght e ni ng torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm) We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. The MOSFETs must be stored at a standard temperature of 5 to 35C and relative humidity of 45 to 75%. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady. The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the case. The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to fail during later processing. The MOSFETs should be stored in antistatic containers or shipping bags. 11.Appendix This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. This products does not contain Class-I ODS and Class-II ODS substances set force by ` Cl eanAi r Ac t of US' law. If you have any questions about any part of this Specification, please contact Fuji Electric or its sales agent before using the product. Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. The application examples described in this specification are merely typical uses of Fuji Electric products. This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights. Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. Storage MS5F5983 a 11 / 18 H04-004-03 0 0 25 2 4 50 6 8 Fuji Electric Device Technology Co.,Ltd. DWG.NO. ID [A] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. PD [W] Allowable Power Dissipation PD=f(Tc) 60 50 40 30 20 10 0 75 100 16 10 12 VDS [V] 14 125 4 16 18 150 Tc [ C] Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20 18 20V 10V 6.0V 14 5.5V 12 10 8 5.0V 6 4.5V 2 VGS=4.0V 0 20 22 MS5F5983 a 12 / 18 H04-004-03 0 0.1 1 2 3 4 5 VGS[V] Fuji Electric Device Technology Co.,Ltd. DWG.NO. gfs [S] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. ID[A] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 10 1 0.1 0.01 6 1 7 8 9 10 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 100 10 1 0.1 10 ID [A] MS5F5983 a 13 / 18 H04-004-03 RDS(on) [ ] VGS= 4.0V 4.5V 0 -50 2 4 -25 6 1.2 0 8 25 10 1.0 50 Tch [ C] Fuji Electric Device Technology Co.,Ltd. DWG.NO. RDS(on) [ ] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C 1.6 1.4 5.0V 5.5V 1.2 1.0 6.0V 10V 20V 0.8 0.6 0.4 0.2 0.0 12 75 14 100 16 18 125 20 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V 2.4 2.2 2.0 1.8 1.6 1.4 max. typ. 0.8 0.6 0.4 0.2 0.0 150 MS5F5983 a 14 / 18 H04-004-03 VGS(th) [V] 3.5 2.0 -50 20 0 -25 5 0 10 25 12 15 20 Fuji Electric Device Technology Co.,Ltd. DWG.NO. VGS [V] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 5.0 4.5 4.0 max. 3.0 2.5 min. 1.5 1.0 0.5 0.0 50 75 Tch [ C] 25 30 100 Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25 C 18 16 14 Vcc= 100V 250V 400V 10 8 6 4 2 0 35 125 150 40 45 Qg [nC] MS5F5983 a 15 / 18 H04-004-03 10 -1 100 10 0.1 0.00 0.25 0 0.50 0.75 Fuji Electric Device Technology Co.,Ltd. DWG.NO. IF [A] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. C [F] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10n 1n Ciss 100p Coss 10p Crss 1p 10 1 1.00 10 2 1.25 1.50 10 1.75 MS5F5983 3 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 10 1 2.00 VSD [V] a 16 / 18 H04-004-03 t [ns] 10 10 10 3 10 -1 400 350 250 0 25 50 Fuji Electric Device Technology Co.,Ltd. DWG.NO. EAS [mJ] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 tf 2 td(off) 1 td(on) tr 0 10 0 10 1 75 100 10 2 ID [A] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V IAS=4A 300 IAS=6A 200 IAS=9A 150 100 50 0 125 150 starting Tch [ C] MS5F5983 a 17 / 18 H04-004-03 Avalanche Current I AV [A] 2 10 1 10 0 10 -1 10 -2 10-8 10 -2 10 -3 10-6 10-7 101 10-5 10-6 10-4 Fuji Electric Device Technology Co.,Ltd. DWG.NO. Zth(ch-c) [/W] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=50V Single Pulse 10-5 10-4 10-3 10-2 10-3 10-1 MS5F5983 10-2 tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 100 10-1 100 t [sec] a 18 / 18 H04-004-03