SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 4 - MARCH 2001
FEATURES
* Guaranteed hFE Specified up to 2A
* Fast Switching
PARTMARKING DETAIL - FZT605
COMPLEMENTARY TYPES - FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 140 V
Collector-Emitter Voltage VCEO 120 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 4A
Continuous Collector Current IC1.5 A
Power Dissipation Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 140 V IC=100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO 120 V IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µA
Collector Cut-Off
Current ICBO 0.01
10 µA
µAVCB=120V
VCB=120V,Tamb=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB=8V
Collector-Emitter Cut-Off Current ICES 10 µAVCES
=120V
Collector-Emitter Saturation
Voltage VCE(sat) 1.0,
1.5 V
VIC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
Base-Emitter Saturation Voltage VBE(sat) 1.8 V IC=1A, IB=1mA*
Base-Emitter Turn-On Voltage VBE(on) 1.7 V IC=1A, VCE=5V*
Static Forward
Current Transfer Ratio hFE 2K
5K
2K
0.5K 100K
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
Transition Frequency ft150 MHz IC=100mA, VCE=10V
f=20MHz
Input Capacitance Cibo 90 Typical pF VEB=500mV, f=1MHz
Output Capacitance Cobo 15 Typical pF VCB=10V, F=1MHz
Switching Times ton 0.5 Typical nsec IC=500mA, VCE=10V
IB1=IB2=0.5mA
toff 1.6 Typical nsec
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices.
C
C
E
B
FZT605
TBA