V
RRM
= 150 V - 200 V
I
F(AV)
= 120 A
Features
• High Surge Capability Twin Tower Package
• Not ESD Sensitive
Parameter Symbol MBR120150CT(R) Unit
Repetitive peak reverse
voltage V
RRM
150 V
RMS reverse voltage V
RMS
106 V
Silicon Power
Schottk
y
Diode
Conditions
MBR120150CT thru MBR120200CTR
200
141
MBR120200CT(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
• Types from 150 V to 200 V V
RRM
DC blocking voltage V
DC
150 V
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol MBR120150CT(R) Unit
Average forward current
(per pkg) I
F(AV)
120 A
Maximum forward voltage
(per leg) 0.88
1
10
30
Thermal characteristics
Thermal resistance,
junction-case (per leg) R
ΘJC
0.80 °C/W
-55 to 150
200
1
MBR120200CT(R)
0.80
T
j
= 150 °C
0.92
mA
T
j
= 25 °C
I
FM
= 60 A, T
j
= 25 °C
Conditions
-55 to 150
30
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at rated
DC blocking voltage (per
leg)
I
R
V
F
V
A
T
j
= 100 °C 10
T
C
= 125 °C 120
Peak forward surge
current (per leg) I
FSM
t
p
= 8.3 ms, half sine 800 800
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1
MBR120150CT thru MBR120200CTR
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBR120150CT thru MBR120200CTR
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3
