FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS PER TRANSISTOR @ 25°C
3.1 - 1
3.1
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
4 11 R2
Supersedes 1 07 R1
FOUR N-CHANNEL MOSFETS IN HERMETIC
POWER PACKAGE
OMD400
OMD500
OMD100
OMD200
PART NUMBER VDS RDS(on) ID
OMD100 100V .08 25A
OMD200 200V .11 25A
OMD400 400V .35 13A
OMD500 500V .43 11A
SCHEMATIC CONNECTION DIAGRAM
DSG
FET 1
DSG
FET 3
DSG
FET 3
DSG
FET 4
.150
1.520
.260
.625
.125
(10 PLCS)
.187
TYP.
1.000
SQ.
.040 LEAD
DIA.
.500
MIN.
.156 DIA.
TYP.
.050 .270
.170 R.
TYP.
45°
REF
ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
STATIC P/N OMD100 (100V) STATIC P/N OMD200 (200V)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown 100 V VGS = 0, BVDSS Drain-Source Breakdown 200 V VGS = 0,
Voltage ID= 250 mA Voltage ID= 250 mA
VGS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS, ID= 250 mAV
GS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS, ID= 250 mA
IGSSF Gate-Body Leakage Forward 100 nA VGS = +20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = + 20 V
IGSSR Gate-Body Leakage Reverse - 100 nA VGS = -20 V IGSSR Gate-Body Leakage Reverse -100 nA VGS = - 20 V
IDSS Zero Gate Voltage Drain 0.1 0.25 mA V DS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0
Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC= 125° C TC= 125° C
ID(on) On-State Drain Current135 A VDS 2 VDS(on), VGS = 10 V ID(on) On-State Drain Current130 A VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State 1.1 1.60 V VGS = 10 V, ID= 20 A VDS(on) Static Drain-Source On-State 1.36 1.76 V VGS = 10 V, ID= 16 A
Voltage1Voltage1
RDS(on) Static Drain-Source On-State .065 .080 VGS = 10 V, ID= 20 A RDS(on) Static Drain-Source On-State .085 .110 VGS = 10 V, ID= 16 A
Resistance1Resistance1
RDS(on) Static Drain-Source On-State .10 .160 VGS = 10 V, ID= 20 A, RDS(on) Static Drain-Source On-State 0.14 .200 VGS = 10 V, ID= 16 A,
Resistance1TC= 125 C Resistance1TC= 125 C
DYNAMIC DYNAMIC
gfs Forward Transductance19.0 10 S(W)VDS 2 VDS(on), ID= 20 A gfs Forward Transductance110.0 12.5 S(W)VDS 2 VDS(on), ID= 16 A
Ciss Input Capacitance 2700 pF VGS = 0 Ciss Input Capacitance 2400 pF VGS = 0
Coss Output Capacitance 1300 pF VDS = 25 V Coss Output Capacitance 600 pF VDS = 25 V
Crss Reverse Transfer Capacitance 470 pF f = 1 MHz Crss Reverse Transfer Capacitance 250 pF f = 1 MHz
td(on) Turn-On Delay Time 28 ns VDD = 30 V, ID@20 A td(on) Turn-On Delay Time 25 ns VDD = 75 V, ID@16 A
trRise Time 45 ns Rg= 5.0 W, VG= 10V trRise Time 60 ns Rg= 5.0 W,VGS = 10V
td(off) Turn-Off Delay Time 100 ns td(off) Turn-Off Delay Time 85 ns
tfFall Time 50 ns tfFall Time 38 ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ISContinuous Source Current - 40 A Modified MOSPOWER ISContinuous Source Current - 30 A Modified MOSPOWER
(Body Diode) symbol showing (Body Diode) symbol showing
ISM Source Current1- 160 A the integral P-N ISM Source Current1- 120 A the integral P-N
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSD Diode Forward Voltage1- 2.5 V T C= 25 C, IS= -40 A, VGS = 0 VSD Diode Forward Voltage1- 2 V TC= 25 C, IS= -30 A, VGS = 0
trr Reverse Recovery Time 400 ns TJ= 150 C, IF= IS,trr Reverse Recovery Time 350 ns TJ= 150 C, IF= IS,
dlF/ds = 100 A/msdlF/ds = 100 A/ ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
3.1 - 2
OMD100 - OMD500
3.1
(MOSFET switching times are
essentially independent of
operating temperature.)
(MOSFET switching times are
essentially independent of
operating temperature.)
G
D
S
G
D
S
(W)(W)
ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
STATIC P/N OMD400 (400V) STATIC P/N OMD500 (500V)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown 400 V VGS = 0, BVDSS Drain-Source Breakdown 500 V VGS = 0,
Voltage ID= 250 mA Voltage ID= 250 mA
VGS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS, ID= 250 mAV
GS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS, ID= 250 mA
IGSSF Gate-Body Leakage Forward 100 nA VGS = +20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = +20 V
IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V
IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0
Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC= 125° C TC= 125° C
ID(on) On-State Drain Current115 A VDS 2 VDS(on), VGS = 10 V ID(on) On-State Drain Current113 A VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State 2.0 2.8 V VGS = 10 V, ID= 8.0 A VDS(on) Static Drain-Source On-State 2.1 3.0 V VGS = 10 V, ID= 7.0 A
Voltage1Voltage1
RDS(on) Static Drain-Source On-State 0.30 .35 VGS = 10 V, ID= 8.0 A RDS(on) Static Drain-Source On-State 0.35 0.43 VGS = 10 V, ID= 7.0 A
Resistance1Resistance1
RDS(on) Static Drain-Source On-State .60 .70 VGS = 10 V, ID= 8.0 A, RDS(on) Static Drain-Source On-State 0.66 0.88 VGS = 10 V, ID= 7.0 A,
Resistance1TC= 125 C Resistance1TC= 125 C
DYNAMIC DYNAMIC
gfs Forward Transductance16.0 9.6 S(W)VDS 2 VDS(on), ID= 8.0 A gfs Forward Transductance16.0 7.2 S(W)VDS 2 VDS(on), ID= 7.0 A
Ciss Input Capacitance 2900 pF VGS = 0 Ciss Input Capacitance 2600 pF VGS = 0
Coss Output Capacitance 450 pF VDS = 25 V Coss Output Capacitance 280 pF VDS = 25 V
Crss Reverse Transfer Capacitance 150 pF f = 1 MHz Crss Reverse Transfer Capacitance 40 pF f = 1 MHz
td(on) Turn-On Delay Time 30 ns VDD = 200 V, ID@8.0 A td(on) Turn-On Delay Time 30 ns VDD = 210 V, ID@7.0 A
trRise Time 40 ns Rg=5.0 W, VGS =10V trRise Time 46 ns Rg= 5.0 W, VGS = 10 V
td(off) Turn-Off Delay Time 80 ns td(off) Turn-Off Delay Time 75 ns
tfFall Time 30 ns tfFall Time 31 ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ISContinuous Source Current - 15 A Modified MOSPOWER ISContinuous Source Current - 13 A Modified MOSPOWER
(Body Diode) symbol showing (Body Diode) symbol showing
ISM Source Current1- 60 A the integral P-N ISM Source Current1- 52 A the integral P-N
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSD Diode Forward Voltage1- 1.6 V TC= 25 C, IS= -15 A, VGS = 0 VSD Diode Forward Voltage1- 1.4 V TC= 25 C, IS= -13 A, VGS = 0
trr Reverse Recovery Time 600 ns TJ= 100 C, IF= IS,trr Reverse Recovery Time 700 ns TJ= 150 C, IF= IS,
dlF/ds = 100 A/msdlF/ds = 100 A/ ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
3.1 - 3
OMD100 - OMD500
3.1
(MOSFET switching times are
essentially independent of
operating temperature.)
(MOSFET switching times are
essentially independent of
operating temperature.)
G
D
S
G
D
S
(W)(W)
3.1
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
Parameter OMD100 OMD200 OMD400 OMD500 Units
VDS Drain-Source Voltage 100 200 400 500 V
VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V
ID@ TC= 25°C Continuous Drain Current 2± 25 ± 25 ± 13 ± 11 A
ID@ TC= 100°C Continuous Drain Current 2± 16 ± 16 ±.8 ± 7 A
IDM Pulsed Drain Current1± 100 ± 80 ± 54 ± 40 A
VGS Gate-Source Voltage ± 20 ± 20 ± 20 ±20 V
PD@ TC= 25°C Maximum Power Dissipation 125 125 125 125 W
PD@ TC= 100°C Maximum Power Dissipation 50 50 50 50 W
Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C
Junction To Ambient Linear Derating Factor .033 .033 .033 .033 W/°C
TJOperating and
Tstg Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
RthJC Junction-to-Case 1.0 °C/W
RthJA Junction-to-Ambient 30 °C/W Free Air Operation
POWER DERATING
OMD100 - OMD500
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
PACKAGE OPTIONS
6 PIN SIP
MOD PAK
