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DATA SH EET

Product speciﬁcation

Supersedes data of 1999 May 06 2001 Jun 05

DISCRETE SEMICONDUCTORS

PUMH9

NPN resistor-equipped double

transistor

ook, halfpage

MBD128

2001 Jun 05 2

Philips Semiconductors Product speciﬁcation

NPN resistor-equipped double transistor PUMH9

FEATURES

•Transistors with built-in bias resistors (R1 typ. 10 kΩ

and R2 typ. 47 kΩ)

•No mutual interference between the transistors

•Simplification of circuit design

•Reduces number of components and board space.

APPLICATIONS

•Especially suitable for space reduction in interface and

driver circuits

•Inverter circuit configurations without use of external

resistors.

DESCRIPTION

NPN resistor-equipped double transistor in an SC-88

(SOT363) plastic package.

MARKING

PINNING

TYPE NUMBER MARKING CODE

PUMH9 Ht9

PIN DESCRIPTION

1, 4 emitter TR1; TR2

2, 5 base TR1; TR2

6, 3 collector TR1; TR2

Fig.1 Simplified outline (SC-88) and symbol.

handbook, halfpage

MAM342

654

123

TR1 TR2

R1 R2

132

Top view

Fig.2 Equivalent inverter symbol.

MBK120

2, 5 6, 3

1, 4

2001 Jun 05 3

Philips Semiconductors Product speciﬁcation

NPN resistor-equipped double transistor PUMH9

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Refer to SC-88 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

VCBO collector-base voltage open emitter −50 V

VCEO collector-emitter voltage open base −50 V

VEBO emitter-base voltage open collector −10 V

VIinput voltage

positive −+40 V

negative −−10 V

IOoutput current (DC) −100 mA

ICM peak collector current −100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤25 °C; note 1 −300 mW

2001 Jun 05 4

Philips Semiconductors Product speciﬁcation

NPN resistor-equipped double transistor PUMH9

THERMAL CHARACTERISTICS

Note

1. Refer to SC-88 standard mounting conditions.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 416 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor

ICBO collector cut-off current IE= 0; VCB =50V −−100 nA

ICEO collector cut-off current IB= 0; VCE =30V −−1µA

= 0; VCE = 30 V; Tj= 150 °C−−50 µA

IEBO emitter cut-off current IC= 0; VEB =5V −−150 µA

hFE DC current gain IC= 5 mA; VCE = 5 V 100 −−

CEsat collector-emitter saturation

voltage IC= 5 mA; IB= 0.25 mA −−100 mV

Vi(off) input-off voltage IC= 100 µA; VCE =5V −0.7 0.5 V

Vi(on) input-on voltage IC= 1 mA; VCE = 0.3 V 1.4 0.8 −V

R1 input resistor 7 10 13 kΩ

resistor ratio 3.7 4.7 5.7

Cccollector capacitance IE=i

e= 0; VCB = 10 V; f = 1 MHz −−2.5 pF

-------

2001 Jun 05 5

Philips Semiconductors Product speciﬁcation

NPN resistor-equipped double transistor PUMH9

Fig.3 DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−40 °C.

handbook, halfpage

103

102

MGW105

10−1110

(mA)

hFE

102

(3)

(2)

(1)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−40 °C.

handbook, halfpage

103

102

MGW104

10−1110

(mA)

VCEsat

(mV)

102

(3)

(2)

(1)

Fig.5 Input-off voltage as a function of collector

current; typical values.

VCE =5V.

(1) Tamb =−40 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

handbook, halfpage

MGW107

0.4

0.8

1.2

1.6

10−210−11IC (mA)

VBE

(V)

(3)

(2)

(1)

Fig.6 Input-on voltage as a function of collector

current; typical values.

VCE = 0.3 V.

(1) Tamb =−40 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

handbook, halfpage

102

10−1

MGW106

10−1110

(mA)

VBE

(V)

102

(3)

(2)

(1)

2001 Jun 05 6

Philips Semiconductors Product speciﬁcation

NPN resistor-equipped double transistor PUMH9

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT363 SC-88

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

Plastic surface mounted package; 6 leads SOT363

UNIT A1

max bpcDEe

Qywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28

2001 Jun 05 7

Philips Semiconductors Product speciﬁcation

NPN resistor-equipped double transistor PUMH9

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2001 72

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Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Jun 05 Document order number: 9397 750 08225