MRF6V12500HR3 - Freescale Semiconductor, Inc.

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power transistors designed for applications operating at frequencies

between 960 and 1215 MHz. These devices are suitable for use in pulse

applications.

•Typical Pulse Performance: VDD =50Volts,I

DQ = 200 mA,

Pulse Width = 128 μsec, Duty Cycle = 10%

Application

Pout

(W)

(MHz)

Gps

(dB)

ηD

(%)

Narrowband 500 Peak 1030 19.7 62.0

Broadband 500 Peak 960--1215 18.5 57.0

•Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak

Power

Features

•Characterized with Series Equivalent Large--Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 50 VDD Operation

•Integrated ESD Protection

•Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

For R5 Tape and Reel option, see p. 14.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage VDSS --0.5, +110 Vdc

Gate--Source Voltage VGS --6.0, +10 Vdc

Storage Temperature Range Tstg -- 65 to +150 °C

Case Operating Temperature TC150 °C

Operating Junction Temperature (1,2) TJ225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit

Thermal Impedance, Junction to Case

Case Temperature 80°C, 500 W Pulse, 128 μsec Pulse Width, 10% Duty Cycle ZθJC 0.044 °C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF6V12500H

Rev. 3, 6/2012

Freescale Semiconductor

Technical Data

960--1215 MHz, 500 W, 50 V

PULSE

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF6V12500HR3

MRF6V12500HSR3

CASE 465A--06, STYLE 1

NI--780S

MRF6V12500HSR3

CASE 465--06, STYLE 1

NI--780

MRF6V12500HR3

©Freescale Semiconductor, Inc., 2009--2010, 2012.

ll rights reserved.

RF Device Data

Freescale Semiconductor, Inc.

MRF6V12500HR3 MRF6V12500HSR3

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22--A114) 2, passes 2600 V

Machine Model (per EIA/JESD22--A115) B, passes 200 V

Charge Device Model (per JESD22--C101) IV, passes 2000 V

Table 4. Electrical Characteristics (TA=25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Gate--Source Leakage Current

(VGS =5Vdc,V

DS =0Vdc)

IGSS — — 10 μAdc

Drain--Source Breakdown Voltage

(VGS =0Vdc,I

D= 200 mA)

V(BR)DSS 110 — — Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50Vdc,V

GS =0Vdc)

IDSS — — 20 μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =90Vdc,V

GS =0Vdc)

IDSS — — 200 μAdc

On Characteristics

Gate Threshold Voltage

(VDS =10Vdc,I

D=1.32mA)

VGS(th) 0.9 1.7 2.4 Vdc

Gate Quiescent Voltage

(VDD =50Vdc,I

D= 200 mAdc, Measured in Functional Test)

VGS(Q) 1.7 2.4 3.2 Vdc

Drain--Source On--Voltage

(VGS =10Vdc,I

D=3.26Adc)

VDS(on) —0.25 —Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS =50Vdc±30 mV(rms)ac @ 1 MHz, VGS =0Vdc)

Crss —0.2 —pF

Output Capacitance

(VDS =50Vdc±30 mV(rms)ac @ 1 MHz, VGS =0Vdc)

Coss —697 —pF

Input Capacitance

(VDS =50Vdc,V

GS =0Vdc±30 mV(rms)ac @ 1 MHz)

Ciss —1391 —pF

Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD =50Vdc,I

DQ = 200 mA, Pout = 500 W Peak (50 W Avg.),

f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle

Power Gain Gps 18.5 19.7 22.0 dB

Drain Efficiency ηD58.0 62.0 — %

Input Return Loss IRL — -- 1 8 -- 9 dB

Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD =50Vdc,

IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 960--1215 MHz, 128 μsec Pulse Width, 10% Duty Cycle

Power Gain Gps —18.5 —dB

Drain Efficiency ηD—57.0 — %

1. Part internally matched both on input and output.

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic

Z11 0.161” x 1.500″Microstrip

Z12 0.613” x 1.281″Microstrip

Z13 0.248” x 0.865″Microstrip

Z14 0.087” x 0.425″Microstrip

Z15 0.309” x 0.090″Microstrip

Z16 0.193” x 0.516″Microstrip

Z17 0.279” x 0.080″Microstrip

Z18 0.731” x 0.080″Microstrip

Z19, Z21 0.507” x 0.040″Microstrip

PCB Arlon CuClad 250GX--0300--55--22, 0.030″,εr=2.55

Z1 0.457″x 0.080″Microstrip

Z2 0.250″x 0.080″Microstrip

Z3 0.605″x 0.040″Microstrip

Z4 0.080″x 0.449″Microstrip

Z5 0.374″x 0.608″Microstrip

Z6 0.118″x 1.252″Microstrip

Z7 0.778″x 1.710″Microstrip

Z8 0.095″x 1.710″Microstrip

Z9, Z20 0.482″x 0.050″Microstrip

Z10 0.138″x 1.500″Microstrip

INPUT

Z2 Z4

DUT

OUTPUT

VBIAS

SUPPLY

C5 C12 C14

Z16

C15

Z15Z14Z13Z12Z11Z10

Z8Z7Z6

Z19

Z20

Z21

Z17 Z18

C6 C16

C11 C10

C13

Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C2 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC

C3, C4, C5, C6 33 pF Chip Capacitors ATC100B330JT500XT ATC

C7, C10 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata

C8,C11,C13,C16 2.2 μF, 100 V Chip Capacitors 2225X7R225KT3AB ATC

C9 22 μF, 25 V Chip Capacitor TPSD226M025R0200 AVX

C12 1μF, 100 V Chip Capacitor GRM31CR72A105KA01L Murata

C14, C15 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp

R1, R2 56 Ω, 1/4 W Chip Resistors CRCW120656R0FKEA Vishay

R3, R4 0Ω, 3 A Chip Resistors CRCW12060000Z0EA Vishay

RF Device Data

Freescale Semiconductor, Inc.

MRF6V12500HR3 MRF6V12500HSR3

Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout

CUT OUT AREA

MRF6V12500H Rev. 1

C9 C8 C7 C3

C11 C10

C4 C6

C16

C12

C5 C13

C14

C15

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS

0.1

10000

02010

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 3. Capacitance versus Drain--Source Voltage

C, CAPACITANCE (pF)

Ciss

Coss

Crss

Measured with ±30 mV(rms)ac @ 1 MHz

VGS =0Vdc

100

160

VDD =50Vdc,I

DQ = 200 mA

f = 1030 MHz, Pulse Width = 128 μsec

100

DUTY CYCLE (%)

Figure 4. Safe Operating Area

MAXIMUM OPERATING Tcase (°C)

140

120

52015

Pout = 525 W

Pout = 475 W

Pout = 500 W

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 5. Power Gain and Drain Efficiency

versus Output Power

Gps, POWER GAIN (dB)

ηD, DRAIN EFFICIENCY (%)

ηD

1000

Gps

VDD =50Vdc,I

DQ = 200 mA, f = 1030 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

Pin, INPUT POWER (dBm) PEAK

Figure 6. Output Power versus Input Power

32 34 36 38 40 42

Pout, OUTPUT POWER (WATTS)

P3dB = 57.6 dBm (575 W)

Actual

Ideal

P1dB = 57.1 dBm (511 W)

VDD =50Vdc,I

DQ = 200 mA, f = 1030 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

Pout, OUTPUT POWER (WATTS) PEAK

Figure 7. Power Gain versus Output Power

Gps, POWER GAIN (dB)

100

IDQ = 800 mA

1000

600 mA

200 mA

VDD = 50 Vdc, f = 1030 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

Figure 8. Power Gain versus Output Power

Pout, OUTPUT POWER (WATTS) PEAK

Gps, POWER GAIN (dB)

VDD =30V

35 V

45 V

100 1000

50 V

40 V

IDQ = 200 mA, f = 1030 MHz

Pulse Width = 128 μsec

Duty Cycle = 10%

1000

400 mA

RF Device Data

Freescale Semiconductor, Inc.

MRF6V12500HR3 MRF6V12500HSR3

TYPICAL CHARACTERISTICS

700

062

500

400

Pin, INPUT POWER (dBm) PEAK

Figure 9. Output Power versus Input Power

Pout, OUTPUT POWER (WATTS)

600

TC=--30_C

VDD =50Vdc,I

DQ = 200 mA, f = 1030 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

85_C

55_C

25_C

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 10. Power Gain and Drain Efficiency versus

Output Power

Gps, POWER GAIN (dB)

ηD, DRAIN EFFICIENCY (%)

ηD

1000

25_C

TC=--30_C

85_C

18 55_C

VDD =50Vdc,I

DQ = 200 mA, f = 1030 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

Gps

200

100

300

250

109

TJ, JUNCTION TEMPERATURE (°C)

Figure 11. MTTF versus Junction Temperature

MTTF calculator available at http:/www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

107

106

105

110 130 150 170 190

MTTF (HOURS)

210 230

108

VDD =50Vdc

Pout = 500 W Peak

Pulse Width = 128 μsec

Duty Cycle = 10%

ηD= 62%

VDD =50Vdc,I

DQ = 200 mA, Pout = 500 W Peak

MHz

Zsource

Ω

Zload

Ω

1030 1.36 -- j1.27 2.50 -- j0.17

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Figure 12. Series Equivalent Source and Load Impedance

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Zsource Zload

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

Figure 13. MRF6V12500H(HS) Test Circuit Component Layout — 960--1215 MHz

C10

CUT OUT AREA

MRF6V12500

Rev. 1

C12

C14

C16

C17

C18

C15

C13

C11

Table 6. MRF6V12500H(HS) Test Circuit Component Designations and Values — 960--1215 MHz

Part Description Part Number Manufacturer

C1 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC

C2 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC

C3, C4 33 pF Chip Capacitors ATC100B330JT500XT ATC

C5, C6, C11, C12 2.2 μF, 100 V Chip Capacitors G2225X7R225KT3AB ATC

C7 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet

C8 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC

C9, C10 39 pF Chip Capacitors ATC100B390JT500XT ATC

C13, C14 0.022 μF, 100 V Chip Capacitors C1825C223K1GAC Kemet

C15, C16 0.10 μF, 100 V Chip Capacitors C1812F104K1RAC Kemet

C17, C18 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp

R1, R2 22 Ω, 1/4 W Chip Resistors CRCW120622R0FKEA Vishay

PCB 0.030″,εr=2.55 AD255A Arlon

RF Device Data

Freescale Semiconductor, Inc.

MRF6V12500HR3 MRF6V12500HSR3

TYPICAL CHARACTERISTICS — 960--1215 MHz

Gps, POWER GAIN (dB)

1300900

IRL

Gps

f, FREQUENCY (MHz)

Figure 14. Power Gain, Drain Efficiency and IRL

versus Frequency

1150110010501000950

-- 2 0

-- 1 0

ηD, DRAIN

EFFICIENCY (%)

ηD

16 58

1200 1250

VDD =50Vdc,P

out = 500 W Peak (50 W Avg.), IDQ = 200 mA

Pulse Width = 128 μsec, Duty Cycle = 10%

600

Pout, OUTPUT POWER (WATTS) PEAK

Figure 15. Power Gain and Drain Efficiency versus

Output Power

VDD =50Vdc

IDQ = 200 mA

Pulse Width = 128 μsec

Duty Cycle = 10%

400200

ηD,DRAIN EFFICIENCY (%)

Gps

ηD

Gps, POWER GAIN (dB)

-- 5

-- 1 5

IRL, INPUT RETURN

LOSS (dB)

250 300 350 450 500 550

1150 MHz

1030 MHz

960 MHz

1215 MHz

1150 MHz

1030 MHz

960 MHz

1215 MHz

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

Zo=5Ω

Zload

f = 1215 MHz

f = 960 MHz

Zsource

f = 960 MHz

f = 1215 MHz

VDD =50Vdc,I

DQ = 200 mA, Pout = 500 W Peak

MHz

Zsource

Ω

Zload

Ω

960 2.25 -- j1.78 1.38 -- j1.53

1030 2.51 -- j1.02 1.48 -- j1.11

1090 2.69 -- j0.73 1.51 -- j0.78

1150 2.71 -- j0.65 1.53 -- j0.49

1215 2.48 -- j0.76 1.53 -- j0.33

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Figure 16. Series Equivalent Source and Load Impedance — 960--1215 MHz

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Zsource Zload

RF Device Data

Freescale Semiconductor, Inc.

MRF6V12500HR3 MRF6V12500HSR3

PACKAGE DIMENSIONS

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

RF Device Data

Freescale Semiconductor, Inc.

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

RF Device Data

Freescale Semiconductor, Inc.

MRF6V12500HR3 MRF6V12500HSR3

PRODUCT DOCUMENTATION AND SOFTWARE

Refer to the following documents and software to aid your design process.

Application Notes

•AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

•EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

•Electromigration MTTF Calculator

•RF High Power Model

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software

& Tools tab on the part’s Product Summary page to download the respective tool.

R5 TAPE AND REEL OPTION

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

The R5 tape and reel option for MRF6V12500H and MRF6V12500HS parts will be available for 2 years after release of

MRF6V12500H and MRF6V12500HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be

delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5

tape and reel option will be offered MRF6V12500H and MRF6V12500HS in the R3 tape and reel option.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0Sept. 2009 •Initial Release of Data Sheet

1Apr. 2010 •Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related

“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1

•Added RF High Power Model availability to Product Software, p. 9

2Sept. 2010 •Maximum Ratings table: corrected VDSS from --0.5, +100 to --0.5, +110 Vdc, p. 2

•Added 960--1215 MHz Broadband application as follows:

-- Typical Performance, p. 1, 2

-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8

-- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9

-- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9

-- Fig. 16, Series Equivalent Source and Load Impedance, p. 10

3June 2012 •Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD

class, p. 2

•Modified figure titles and/or graph axes labels to clarify application use, p. 5, 6, 9

•Fig. 6, Output Power versus Input Power: corrected Pout, Output Power unit of measure to watts, p. 5

•Fig. 9, Output Power versus Input Power: corrected Pout, Output Power unit of measure to watts, p. 6

•Fig. 11, MTTF versus Junction Temperature: MTTF end temperature on graph changed to match maximum

operating junction temperature, p. 6

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

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Document Number: MRF6V12500H

Rev. 3, 6/2012