Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm Absolute Maximum Ratings Ta = 25C Collector-base voltage (Emitter open) Symbol 2SD1275 VCBO 2SD1275A Rating Unit 60 V Emitter-base voltage (Collector open) VEBO 5 V IC 2 A 60 16.70.3 4.20.2 7.50.2 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 4 A 35 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C dissipation Internal Connection 2.0 C B E Electrical Characteristics Ta = 25C 3C Parameter Symbol 2SD1275 Collector-emitter voltage (Base open) Conditions IC = 30 mA, IB = 0 VCEO 2SD1275A Base-emitter voltage Collector-base cutoff current (Emitter open) 2SD1275 Collector-emitter cutoff current (Base open) 2SD1275 Collector-emitter saturation voltage Typ Max 60 Unit V VBE VCE = 4 V, IC = 2 A 2.8 V ICBO VCB = 60 V, IE = 0 1 mA VCB = 80 V, IE = 0 1 VCE = 30 V, IB = 0 2 ICEO VCE = 40 V, IB = 0 2 IEBO VEB = 5 V, IC = 0 2 2SD1275A Forward current transfer ratio Min 80 2SD1275A Emitter-base cutoff current (Collector open) 0.5+0.2 -0.1 0.80.1 V PC TC = 25C 1.30.2 1.40.1 5.080.5 80 ICP Collector power 3.10.1 2.540.3 VCEO Peak collector current 2.70.2 80 Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Collector current 14.00.5 * High forward current transfer ratio hFE * High-speed switching * Full-pack package which can be installed to the heat sink with one screw 4.20.2 5.50.2 Solder Dip (4.0) Features Parameter 10.00.2 0.70.1 For power amplification Complementary to 2SB0949 and 2SB0949A hFE1 VCE = 4 V, IC = 1 A 1 000 hFE2 * VCE = 4 V, IC = 2 A 1 000 VCE(sat) IC = 2 A, IB = 8 mA mA mA 10 000 2.5 V fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 2 A, IB1 = 8 mA, IB2 = -8 mA, 0.5 s Storage time tstg VCC = 50 V 4.0 s Fall time tf 1.0 s Transition frequency Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R hFE2 1 000 to 2 500 Publication date: February 2003 Q P 2 000 to 5 000 4 000 to 10 000 SJD00189BED 1 2SD1275, 2SD1275A PC Ta IC VCE (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)With a 50x50x2mm Al heat sink (4)Without heat sink (PC=2W) (1) TC=25C 20 (2) 8 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 3 2 0.4mA 0.2mA 1 -25C 1.6 2.4 6 4 2 40 80 120 0 160 0 1 2 100 Forward current transfer ratio hFE 25C TC=-25C 100C 0.1 0.1 5 1 104 TC=100C 103 25C -25C 102 10 0.01 10 0.1 1 10 t=1ms DC 1 10 2SD1275A 2SD1275 0.1 0.01 100 103 102 10 1 0.1 1 10 100 Collector-base voltage VCB (V) 103 Thermal resistance Rth (C/W) t=10ms 1 IE=0 f=1MHz TC=25C Rth t 10 1 000 (1)Without heat sink (2)With a 100x100x2mm Al heat sink 102 (1) (2) 10 1 10-1 10-2 10-4 10-3 10-2 10-1 1 Time t (s) Collector-emitter voltage VCE (V) SJD00189BED 3.2 104 Collector current IC (A) Non repetitive pulse TC=25C IC 0.8 Cob VCB Safe operation area ICP 0 Base-emitter voltage VBE (V) VCE=4V Collector current IC (A) 100 0 6 hFE IC 105 10 0.01 0.01 4 Collector-emitter voltage VCE (V) IC/IB=250 1 3 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 VCE(sat) IC Collector current IC (A) 25C TC=100C (3) (4) Ambient temperature Ta (C) 2 VCE=4V 4 30 10 10 Collector current IC (A) 40 0 Collector-emitter saturation voltage VCE(sat) (V) IC VBE 5 Collector current IC (A) Collector power dissipation PC (W) 50 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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