Power Transistors
1
Publication date: February 2003 SJD00189BED
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB0949 and 2SB0949A
■Features
•High forward current transfer ratio hFE
•High-speed switching
•Full-pack package which can be installed to the heat sink with one screw
■Absolute Maximum Ratings Ta = 25°C
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter Symbol Rating Unit
Collector-base voltage 2SD1275 VCBO 60 V
(Emitter open) 2SD1275A 80
Collector-emitter voltage 2SD1275 VCEO 60 V
(Base open) 2SD1275A 80
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC2A
Peak collector current ICP 4A
Collector power TC = 25°CP
C35 W
dissipation 2.0
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage 2SD1275 VCEO IC = 30 mA, IB = 0 60V
(Base open) 2SD1275A 80
Base-emitter voltage VBE VCE = 4 V, IC = 2 A 2.8 V
Collector-base cutoff 2SD1275 ICBO VCB = 60 V, IE = 01mA
current (Emitter open) 2SD1275A VCB = 80 V, IE = 01
Collector-emitter cutoff 2SD1275 ICEO VCE = 30 V, IB = 02mA
current (Base open) 2SD1275A VCE = 40 V, IB = 02
Emitter-base cutoff current (Collector open)
IEBO VEB = 5 V, IC = 02mA
Forward current transfer ratio hFE1 VCE = 4 V, IC = 1 A 1
000
hFE2 *VCE = 4 V, IC = 2 A 1
000 10
000
Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 8 mA 2.5 V
Transition frequency fTVCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz
Turn-on time ton IC = 2 A, IB1 = 8 mA, IB2 = −8 mA, 0.5 µs
Storage time tstg VCC = 50 V 4.0 µs
Fall time tf1.0 µs
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder Dip
(4.0)
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.3
5.08
±0.5
213
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ 3.1
±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R Q P
hFE2 1
000 to 2
500 2
000 to 5
000 4
000 to 10
000
Internal Connection
B
C
E
2SD1275, 2SD1275A
2SJD00189BED
VCE(sat) IChFE ICCob VCB
PC TaIC VCE IC VBE
Safe operation area Rth t
0 16040 12080
0
10
20
30
40
50
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)With a 50×50×2mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
0615243
0
1
2
3
5
4
Collector current IC (A)
Collector-emitter voltage VCE (V)
T
C
=25˚C
I
B
=2.0mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA
0
2
4
6
10
8
0 3.20.8 2.41.6
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
VCE=4V
TC=100˚C –25˚C
25˚C
0.01
0.01
0.1
1
10
100
0.1 1 10
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
IC/IB=250
100˚C
25˚C
TC=–25˚C
0.01 0.1 1 10
10
102
103
104
105
Forward current transfer ratio hFE
Collector current IC (A)
VCE=4V
25˚C
–25˚C
TC=100˚C
0.1 1 10 100
1
10
10
2
10
3
10
4
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Collector-base voltage VCB (V)
I
E
=0
f=1MHz
T
C
=25˚C
0.01 1
0.1
1
10
100
10 100
1
000
Collector current IC (A)
Collector-emitter voltage VCE (V)
Non repetitive pulse
TC=25˚C
ICP
IC
t=10ms
DC
t=1ms
2SD1275
2SD1275A
1
10
−2
10
−1
10
10
3
10
2
10
3
10
4
10
2
10110
−1
10
−3
10
−2
10
−4
Time t (s)
Thermal resistance R
th
(°C/W)
(1)
(2)
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
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and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•Any applications other than the standard applications intended.
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
