PESD5V0S1BA - Philips Semiconductors / NXP Semiconductors

1. Product proﬁle

1.1 General description

Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD

plastic packages designed to protect one signal line from the damage caused by ESD and

other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESD5V0S1BA;PESD5V0S1BB;

PESD5V0S1BL

Low capacitance bidirectional ESD protection diodes

Rev. 03 — 17 December 2004 Product data sheet

Table 1: Product overview

Type number Package

Philips JEITA

PESD5V0S1BA SOD323 SC-76

PESD5V0S1BB SOD523 SC-79

PESD5V0S1BL SOD882 -

■Bidirectional ESD protection of one line ■ESD protection > 30 kV

■Max. peak pulse power: PPP = 130 W ■IEC 61000-4-2, level 4 (ESD)

■Low clamping voltage: V(CL)R = 14 V ■IEC 61000-4-5 (surge); IPP = 12 A

■Ultra low leakage current: IRM = 5 nA ■Ultra small SMD plastic packages

■Cellular handsets and accessories ■Communication systems

■Portable electronics ■Audio and video equipment

■Computers and peripherals

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse stand-off voltage - - 5 V

Cddiode capacitance VR = 0 V;

f = 1 MHz - 3545pF

Product data sheet Rev. 03 — 17 December 2004 2 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

2. Pinning information

3. Ordering information

4. Marking

Table 3: Pinning

Pin Description Simpliﬁed outline Symbol

SOD323, SOD523

1 cathode 1

2 cathode 2

SOD882

1 cathode 1

2 cathode 2

001aab540

sym045

Transparent

top view

sym045

Table 4: Ordering information

Type number Package

Name Description Version

PESD5V0S1BA SC-76 plastic surface mounted package; 2 leads SOD323

PESD5V0S1BB SC-79 plastic surface mounted package; 2 leads SOD523

PESD5V0S1BL - leadless ultra small plastic package; 2 terminals;

body 1.0 × 0.6 × 0.5 mm SOD882

Table 5: Marking codes

Type number Marking code

PESD5V0S1BA E6

PESD5V0S1BB L7

PESD5V0S1BL F1

Product data sheet Rev. 03 — 17 December 2004 3 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

5. Limiting values

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see

Figure 1.

[2] Measured from pin 1 to pin 2.

[1] Measured from pin 1 to pin 2.

[2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power 8/20 µs[1] [2] - 130 W

IPP peak pulse current 8/20 µs[1] [2] -12A

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 7: ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

ESD electrostatic discharge

capability IEC 61000-4-2 (contact

discharge) [1] [2] -30kV

HBM MIL-Std 883 - 10 kV

Table 8: ESD standards compliance

ESD Standard Conditions

IEC 61000-4-2, level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact)

HBM MIL-STD 883; class 3 > 4 kV

Product data sheet Rev. 03 — 17 December 2004 4 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform

according to IEC 61000-4-2

010

e−t

20 t (µs)

Ipp

(%)

120

mle218

100 % Ipp; 8 µs

50 % Ipp; 20 µs

001aaa191

Ipp

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 to 1 ns

Product data sheet Rev. 03 — 17 December 2004 5 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

6. Characteristics

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.

[2] Measures from pin 1 to pin 2.

Table 9: Characteristics

amb

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse stand-off voltage - - 5 V

IRM reverse leakage current VRWM = 5 V;

see Figure 6 - 5 100 nA

V(CL)R clamping voltage IPP = 1 A [1] [2] --10V

IPP = 12 A [1] [2] --14V

V(BR) breakdown voltage IR = 1 mA 5.5 - 9.5 V

rdif differential resistance IR = 1 mA - - 50 Ω

Cddiode capacitance VR = 0 V; f = 1 MHz;

see Figure 5 - 3545pF

Product data sheet Rev. 03 — 17 December 2004 6 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Tamb = 25 °C

Fig 3. Peak pulse power dissipation as a function of

exponential time duration tp; typical values Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

Tamb = 25 °C; f = 1 MHz

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Relative variation of reverse leakage current as

a function of junction temperature; typical

values

001aaa202

tp (µs)

110

103

10 102

102

103

Ppp

(W)

Tj (°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

Ppp

Ppp(25˚C)

VR (V)

054231

001aaa203

(pF)

001aaa204

Tj (°C)

75 150125100

102

10−1

IRM(Tj)

IRM(Tj=85°C)

Product data sheet Rev. 03 — 17 December 2004 7 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Fig 7. ESD clamping test set-up and waveforms

006aaa056

50 Ω

PESD5V0S1Bx

vertical scale = 200 V/div

horizontal scale = 50 ns/div

unclamped +1 kV ESD voltage waveform

(IEC61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

unclamped −1 kV ESD voltage waveform

(IEC61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

vertical scale = 10 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 10 V/div

horizontal scale = 50 ns/div

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER 4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

Product data sheet Rev. 03 — 17 December 2004 8 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

7. Application information

PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from

the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may

be used on lines where the signal polarities are above and below ground. They provide a

surge capability of up to 130 W per line for a 8/20 µs waveform.

Circuit board layout and protection device placement:

Circuit board layout is critical for the suppression of ESD, EFT and surge transients.

The following guidelines are recommended:

1. Place the protection device as close to the input terminal or connector as possible.

2. The path length between the protection device and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protection conductors in parallel with unprotected conductor.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit

boards, use ground vias.

Fig 8. Bidirectional protection of one signal line.

006aaa057

PESD5V0S1Bx

GND

signal line

Product data sheet Rev. 03 — 17 December 2004 9 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

8. Package outline

Fig 9. Package outline SOD323 (SC-76)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD323

99-09-13

03-12-17

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

Plastic surface mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

Product data sheet Rev. 03 — 17 December 2004 10 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Fig 10. Package outline SOD523 (SC-79)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD523 SC-79 98-11-25

02-12-13

Plastic surface mounted package; 2 leads SOD523

0 0.5 1 mm

scale

Ebp

vMA

UNIT bpcDEv

DIMENSIONS (mm are the original dimensions)

Note

1. The marking bar indicates the cathode.

(1) 0.34

0.26 0.17

0.11 0.1

0.85

0.75

1.25

1.15

0.65

0.58 1.65

1.55

Product data sheet Rev. 03 — 17 December 2004 11 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Fig 11. Package outline SOD882

UNIT A1

max.

A(1) be

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46 0.55

0.47

0.03 0.62

0.55 0.65

DIMENSIONS (mm are the original dimensions)

Notes

1. Including plating thickness

2. The marking bar indicates the cathode

0.30

0.22

SOD882 03-04-16

03-04-17

1.02

0.95

(2)

Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882

0 0.5 1 mm

scale

Product data sheet Rev. 03 — 17 December 2004 12 of 15

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

9. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Table 10: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

PESD5V0S1BA SOD323 4 mm pitch, 8 mm tape and reel -115 -135

PESD5V0S1BB SOD523 4 mm pitch, 8 mm tape and reel -115 -135

PESD5V0S1BL SOD882 4 mm pitch, 8 mm tape and reel - -315

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Product data sheet Rev. 03 — 17 December 2004 13 of 15

10. Revision history

Table 11: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PESD5V0S1BA_BB_BL_3 20041217 Product data sheet - 9397 750 14036 PESD5V0S1BA_BB_

BL_2

Modiﬁcations: •Table 1 Product overview added

•Figure 1 Figure title amended

•Table 9 Symbol for differential resistance amended to rdif

•Figure 5 Axis description changed from VBR to VR and ﬁgure title amended

PESD5V0S1BA_BB_BL_2 20040802 Product data sheet - 9397 750 13514 PESD5V0S1BA_1

PESD5V0S1BB_1

PESD5V0S1BA_1 20040322 Product

speciﬁcation - 9397 750 12256 -

PESD5V0S1BB_1 20040304 Product

speciﬁcation - 9397 750 12257 -

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Product data sheet Rev. 03 — 17 December 2004 14 of 15

11. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 17 December 2004

Document number: 9397 750 14036

Published in The Netherlands

Philips Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Application information. . . . . . . . . . . . . . . . . . . 8

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Packing information. . . . . . . . . . . . . . . . . . . . . 12

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 14

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information . . . . . . . . . . . . . . . . . . . . 14