IRF7416QTRPBF - International Rectifier

IRF7416QPbF

HEXFET® Power MOSFET

06/29/11

www.irf.com 1

Top View

8

1

2

3

45

6

7

D

DG

S

A

D

S

VDSS = -30V

RDS(on) = 0.02Ω

SO-8

lAdvanced Process Technology

lUltra Low On-Resistance

lP Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

l150°C Operating Temperature

lLead-Free

Description

These HEXFET® Power MOSFET's in package utilize

the lastest processing techniques to achieve extremely

low on-resistance per silicon area. Additional features

of these HEXFET Power MOSFET's are a 150°C

junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These

benefits combine to make this design an extremely

efficient and reliable device for use in a wide variety of

applications.

The efficient SO-8 package provides enhanced thermal

characteristics making it ideal in a variety of power

applications. This surface mount SO-8 can dramatically

reduce board space and is also available in Tape &

Reel.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10

ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -7.1

IDM Pulsed Drain Current

c

-45

PD @TA = 25°C Power Dissipation 2.5

Linear Derating Factor 0.02 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy

d

370 mJ

dv/dt Peak Diode Recovery dv/dt

e

-5.0 V/ns

TJ Operating Junction and

TSTG Storage Temperature Range

Thermal Resistance

Parameter Max. Units

RθJA Junction-to-Ambient

g

50 °C/W

W

A

°C-55 to + 150

PD - 96124B

IRF7416QPbF

2www.irf.com

S

D

G

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

 Starting TJ = 25°C, L = 25mH

RG = 25Ω, IAS = -5.6A. (See Figure 12)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on FR-4 board, t ≤ 10sec.

Static Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage

-30

–––

V

Δ

V

(BR)DSS

/

Δ

T

J

Breakdown Voltage Temp. Coefficient

–––

-0.024

–––

V/°C

–––

0.020

–––

0.035

V

GS(th)

Gate Threshold Voltage

-1.0

–––

-2.04

V

gfs

Forward Transconductance

5.6

–––

S

I

DSS

Drain-to-Source Leakage Current

–––

-1.0

–––

-25

I

GSS

Gate-to-Source Forward Leakage

–––

-100

Gate-to-Source Reverse Leakage

–––

100

Dynamic Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Q

g

Total Gate Charge

–––

61

92

Q

gs

Gate-to-Source Charge

–––

8.0

12

Q

gd

Gate-to-Drain ("Miller") Charge

–––

22

32

t

d(on)

Turn-On Delay Time

–––

18

–––

t

r

Rise Time

–––

49

–––

t

d(off)

Turn-Off Delay Time

–––

59

–––

t

f

Fall Time

–––

60

–––

C

iss

Input Capacitance

–––

1700

–––

C

oss

Output Capacitance

–––

890

–––

C

rss

Reverse Transfer Capacitance

–––

410

–––

Diode Characteristics

Parameter

Min.

Typ.

Max.

Units

I

S

Continuous Source Current

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

c

V

SD

Diode Forward Voltage

–––

-1.0

V

t

rr

Reverse Recovery Time

–––

56

85

ns

T

J

= 25°C,I

F

= -5.6A

Q

rr

Reverse Recovery Charge

–––

99

150

nC

di/dt = 100A/μs

e

V

DS

= V

GS

, I

D

= -250μA

Conditions

V

DS

= -10V, I

D

= -2.8A

I

D

= -5.6A

V

GS

= -20V

R

DS(on)

Static Drain-to-Source On-Resistance ΩV

GS

= -4.5V, I

D

= -2.8A

f

Conditions

V

GS

= 0V, I

D

= -250μA

Reference to 25°C, I

D

= -1mA

V

GS

= -10V, I

D

= -5.6A

f

T

J

= 25°C, I

S

= -5.6A, V

GS

= 0V

e

integral reverse

p-n junction diode.

Conditions

MOSFET symbol

showing the

A

pF

ns

nC

V

DS

= -25V

ƒ = 1.0MHz, See Fig. 5

nA

μAV

DS

= -24V, V

GS

= 0V

V

DS

= -24V, V

GS

= 0V, T

J

= 125°C

V

GS

= -10V, See Fig. 6 & 9

f

V

GS

= 20V

V

DS

= -24V

V

DD

= -15V

I

D

= -5.6A

R

G

= 6.2

Ω

R

D

= 2.7

Ω,

See Fig. 10

f

V

GS

= 0V

-45

––– –––

-3.1

IRF7416QPbF

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

0.1 1 10

D

DS

20μs PULSE WIDTH

T = 25°C

A

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

J

-3.0V

VGS

TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

1

10

100

0.1 1 10

D

DS

A

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

-3.0V

VGS

TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

20μs PULSE WIDTH

T = 150°C

J

1

10

100

3.0 3.5 4.0 4.5 5.0 5.5

T = 25°C

T = 150°C

J

GS

D

A

-I , Drain-to-Source Current (A)

-V , Gate-to-Source Voltage (V)

V = -10V

20μs PULSE WIDTH

DS

0.0

0.5

1.0

1.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

J

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

A

V = -10V

GS

I = -5.6A

D

IRF7416QPbF

4www.irf.com

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

1000

2000

3000

4000

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0 20406080100

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

V = -24V

V = -15V

DS

FOR TEST CIRCUIT

SEE FIGURE 9

I = -5.6A

D

1

10

100

0.4 0.6 0.8 1.0 1.2

T = 25°C

T = 150°C

J

V = 0V

GS

SD

A

-V , Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

1

10

100

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

A

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

DS

D

100us

1ms

10ms

IRF7416QPbF

www.irf.com 5

0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 9a. Basic Gate Charge Waveform

Fig 9b. Gate Charge Test Circuit

+

-

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

-10V

D.U.T. VDS

ID

IG

-3mA

VGS

.3μF

50KΩ

.2μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

-10V

Q

G

Q

GS

Q

GD

V

G

Charge

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

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6www.irf.com

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(

BR

)

DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

V

DD

DRIVER

A

15V

-20V

25 50 75 100 125 150

0

200

400

600

800

1000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

o

ID

TOP

BOTTOM

-2.5A

-4.5A

-5.6A

IRF7416QPbF

www.irf.com 7

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = P. W .

Period

+

-

+

-







RG

VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

*

VGS*

**

Peak Diode Recovery dv/dt Test Circuit

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 13. For P-Channel HEXFETS

IRF7416QPbF

8www.irf.com

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

e1

D

E

y

b

A

A1

H

K

L

.189

.1497

0°

.013

.050 B ASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MI N MAX

MILLIMETERSINCHES

MI N MAX

DIM

8°

e

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BAS IC

87

5

65

D B

E

A

e

6X

H

0.25 [.010] A

6

7

K x 45°

8X L 8X c

y

0.25 [.010] C A B

e1

A

A1

8X b

C

0.10 [.004]

4312

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS - 012AA.

NOT ES :

1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONT R OL LING DIME NS ION: MIL L IMET E R

3. DIME NS IONS ARE S HOWN IN MIL L IMET E RS [INCHE S ].

5 DIME NS ION DOE S NOT INCL U DE MOL D PROT RU S IONS .

6 DIME NS ION DOE S NOT INCL U DE MOL D PROT RU S IONS .

MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGT H OF LEAD FOR S OLDERING TO

A S UBST RAT E.

MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F 7101

Y = LAST DIGIT OF THE YEAR

PART NUMBER

LOT CODE

WW = WEEK

EXAMPLE: T HIS IS AN IRF7101 (MOS F ET )

P = DE S I GNAT E S L E AD- F R E E

PRODUCT (OPTIONAL)

A = ASSEMBLY SITE CODE

Notes:

1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7416QPbF

www.irf.com 9

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 06/2011

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.