BGR420 - Infineon Technologies AG

BGR420

NPN Silicon RF Transistor With Bias Circuitry

Data Sheet, Rev. 1.0, Juni 2008

Small Signal Discretes

Edition 2008-06-06

Published by Infineon Technologies AG,

85579 Neubiberg, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

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BGR420

Data Sheet 3 Rev. 1.0, 2008-06-06

Trademarks

SIEGET® is a registered trademark of Infineon Technologies AG.

BGR420, NPN Silicon RF Transistor With Bias Circuitry

Revision History: 2008-06-06, Rev. 1.0

Prevision History: no previous version

Page Subjects (major changes since last revision)

Data Sheet 4 Rev. 1.0, 2008-06-06

BGR420

NPN Silicon RF Transistor With Bias Circuitry*

1 NPN Silicon RF Transistor With Bias Circuitry*

2 Description

The BGR420 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing.

Note: ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Figure 1 Circuit diagram

Note: Due to design there is an additional diode between emitter and collector, which does not affect normal

operation for common emitter configuration.

Features

• Noise figure NF = 1.5 dB at 0.4 GHz

•Gain

S21 =26dB at 0.4GHz

• On chip bias circuitry, 13 mA bias current at VCC =3.6V;

VBB =2.8V

• SIEGET ® 25 GHz fT-Line

• Pb-free (RoHS compliant) package

* Short term description

Applications

•LNAs

Type Package Marking

BGR420 SOT343 AWs

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Description

Data Sheet 5 Rev. 1.0, 2008-06-06

2.1 Maximum Ratings

Note: All Voltages refer to GND-node

Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to

absolute maximum rating conditions even only for a short moment may affect device reliability. Maximum

ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the

integrated circuit. Absolute maximum ratings typically differ heavily from recommended operation conditions

2.2 Thermal Resistance

Table 1 Pinning table

Pin Function

1RFIN

2GND

3 RFOUT (VCC)

4VBB

Table 2 Maximum ratings

Parameter Symbol Value Unit

Current at pin VCC ICC 25 mA

Voltage at pin VCC VCC 13 V

Current at pin VBB IBB 2.2 mA

Voltage at pin VBB VBB 8V

Current at pin RFIN IIN 3mA

Voltage at pin RFIN VIN 5V

Total power dissipation1)

TS= 115 °C

1) TS is measured on the emitter (GND) lead at the soldering point to the pcb

Ptot 120 mW

Operation junction temperature range Tjo -65... 150 °C

Storage junction temperature range Tjstg -65... 150 °C

Table 3 Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1)

1) For calculation of RthJA please refer to Application Note Thermal Resistance.

RthJS ≤290 K/W

Data Sheet 6 Rev. 1.0, 2008-06-06

BGR420

Electrical Characteristics

3 Electrical Characteristics

Figure 2 BGR420 test circuit

Table 4 DC characteristics at TA= 25 °C, unless otherwise specified

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

VCC-GND cutoff current ICC 10 µAVCC =13V, IBB =0,

VIN =0

Current at pin VCC ICC 7 1320mAVBB =2.8V, IIN =0,

VCC =3.6V

Table 5 AC characteristics (measured in test circuit Figure 2; verified by random sampling)

TA=25°C, VBB =2.8V, VCC =3.6V, Z0=50Ω, unless otherwise specified

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Insertion power gain S21 26.0

15.5

dB f=0.4GHz

f=1.8GHz

Reverse isolation S12 -32.5

-23.4

dB f=0.4GHz

f=1.8GHz

Noise figure, ZS=ZSopt NF 1.5

1.7

dB f=0.4GHz

f=1.8GHz

Third order intercept point at the

output1)

1) OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement

is 50 Ω from 0.1 MHz to 6 GHz.

OIP321

dBm f=0.4GHz

f=1.8GHz

1 dB compression point at the output OP-1dB 5.5

7.4

dBm f=0.4GHz

f=1.8GHz

Return loss input S11 -7.3

-11

dB f=0.4GHz

f=1.8GHz

Return loss output S22 -2.5

-9.5

dB f=0.4GHz

f=1.8GHz

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BGR420

Package Information

Data Sheet 7 Rev. 1.0, 2008-06-06

4 Package Information

Figure 3 Package Outline SOT343

Figure 4 Footprint of SOT343

Figure 5 Tape of SOT343

SOT343-PO

V08

1.25

±0.1

0.1 MAX.

2.1

±0.1

0.15

+0.1

-0.05

0.3

+0.1

±0.2

±0.1

0.9

+0.1

0.6 A

0.2

1.3

-0.05

0.15

0.1

0.1 MIN.

0.6

SOT343-FP

V08

0.8

1.6

1.15

0.9

SOT323-TP V02

0.2

2.15

2.3

1.1

Pin 1