FDPF4D5N10C - ON SEMICONDUCTOR

FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET

Semiconductor Components Industries, LLC, 2017 Publication Order Number:

June, 2017, Rev. 1.0 FDP4D5N10C / FDPF4D5N10C/D

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FDP4D5N10C / FDPF4D5N10C

N-Channel Shielded Gate PowerTrench® MOSFET

100 V, 128 A, 4.5 mΩ

Features

Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 100 A

Extremely Low Reverse Recovery Charge, Qrr

100% UIL Tested

RoHS Compliant

General Description

This N-Channel MV MOSFET is produced using ON

Semiconductor’s advanced PowerTrench® process that

incorporates Shielded Gate technology. This process has been

optimized to minimize on-state resistance and yet maintain

superior switching performance with best in class soft body

diode.

Applications

Synchronous Rectification for ATX / Server / Telecom PSU

Motor Drives and Uninterruptible Power Supplies

Micro Solar Inverter

TO-220F

TO-220

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.

* Drain current limited by maximum junction temperature. Package limitation current is 120A.

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

FDP4D5N10C FDPF4D5N10C

VDS Drain to Source Voltage 100 100 V

VGS Gate to Source Voltage ±20 ±20 V

Drain Current -Continuous TC = 25°C (Note 3) 128* 128*

A -Continuous TC = 100°C (Note 3) 91 91

-Pulsed (Note 1) 512 512

EAS Single Pulse Avalanche Energy (Note 2) 486 mJ

Power Dissipation TC = 25°C 150 37.5 W

Power Dissipation TA = 25°C 2.4 2.4

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 -55 to +175 °C

Symbol Parameter FDP4D5N10C FDPF4D5N10C Units

RθJC Thermal Resistance, Junction to Case 1.0 4.0 °C/W

RθJA Thermal Resistance, Junction to Ambient 62.5 62.5

Device Marking Device Package Packing Mode Quantity

FDP4D5N10C FDP4D5N10C TO-220 Tube 50 units

FDPF4D5N10C FDPF4D5N10C TO-220F Tube 50 units

FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET

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Electrical Characteristics TJ = 25 °C unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristic

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250 μA, referenced to 25 °C 53 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA

VDS = 80 V, TJ= 150°C 500 μA

IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 310 μA 2.0 3.2 4.0 V

rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 100 A 4.0 4.5 mΩ

gFS Forward Transconductance VDS = 5 V, ID = 100 A 134 S

Ciss Input Capacitance VDS = 50 V, VGS = 0 V,

f = 1 MHz

3615 5065 pF

Coss Output Capacitance 2330 3265 pF

Crss Reverse Transfer Capacitance 18 35 pF

RgGate Resistance 0.1 1.1 2.2 Ω

td(on) Turn-On Delay Time

VDD = 50 V, ID = 100 A,

VGS = 10 V, RGEN = 6 Ω

29 47 ns

trRise Time 49 79 ns

td(off) Turn-Off Delay Time 41 66 ns

tfFall Time 13 24 ns

QgTotal Gate Charge VGS = 0 V to 10 V VDD = 50 V,

ID = 100 A

48 68 nC

Qgs Gate to Source Gate Charge 19 nC

Qgd Gate to Drain “Miller” Charge 9 nC

Qoss Output Charge VDD = 50 V, VGS = 0 V 150 nC

ISMaximum Continuous Drain to Source Diode Forward Current - - 128 A

ISM Maximum Pulsed Drain to Source Diode Forward Current - - 512 A

VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 100 A 1.0 1.3 V

trr Reverse Recovery Time VGS = 0 V, VDD = 50 V ,

IF = 100 A, dIF/dt = 100 A/μs

82 132 ns

Qrr Reverse Recovery Charge 106 170 nC

trr Reverse Recovery Time VGS = 0 V, VDD = 50 V,

IF = 100 A, dIF/dt = 300 A/μs

71 114 ns

Qrr Reverse Recovery Charge 258 413 nC

Notes:

1. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.

2. EAS of 486 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 18 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 58 A.

3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET

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Typical Characteristics TJ = 25 °C unless otherwise noted.

Figure 1.

012345

120

180

240

300

VGS = 5.5 V

VGS = 10 V

VGS = 6 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 7 V

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

0 60 120 180 240 300

VGS = 10 V

VGS = 5 V

VGS = 6 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

VGS = 7 V

VGS = 5.5 V

N o r m a l i z e d O n - R e s i s t a n c e

vs. Drain Current and Gate Voltage

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

-75 -50 -25 0 25 50 75 100 125 150 175

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 100 A

VGS = 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

vs. Junction Temperature

Figure 4.

45678910

TJ = 150 oC

ID = 100 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

rDS(on), DRAIN TO

SOURCE ON-RESISTANCE (mΩ)

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

O n- R e s is ta nc e v s. Ga t e t o

Source Voltage

Figure 5. Transfer Characteristics

2345678910

120

180

240

300

TJ = 175 oC

VDS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.00.20.40.60.81.01.2

0.001

0.01

0.1

100

300

TJ = -55 oC

TJ = 25 oC

TJ = 175 oC

VGS = 0 V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

S ou r c e to D r a in Di o de

Forward Voltage vs. Source Current

FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET

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Figure 7.

0 1020304050

ID = 100 A

VDD = 75 V

VDD = 50 V

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 25 V

Gate Charge Characteristics Figure 8.

0.1 1 10 100

100

1000

10000

f = 1 MHz

VGS = 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

C a p a c i t a n c e v s . D r a i n

to Source Voltage

Figure 9.

0.001 0.01 0.1 1 10 100 1000

100

TJ = 125 oC

TJ = 25 oC

TJ = 150 oC

tAV, TIME IN AVALANCHE (ms)

IAS, AVALANCHE CURRENT (A)

U n c l a m p e d I n d u c t i v e

Switching Capability

Figure 10.

25 50 75 100 125 150 175

120

160

RθJC = 1.0 oC/W

VGS = 10 V

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

M a x i m u m C o n t i n u o u s D r a i n

Current vs. Case Temperature

Figure 1 1 . F o r w a r d B i as Safe

Operating Area

0.1 1 10 100 400

0.1

100

1000

CURVE BENT TO

MEASURED DATA

10 μs

100 ms

10 ms

1 ms

100 μs

ID, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

RθJC = 1.0 oC/W

TC = 25 oC

for FDP4D5N10C

Figure 12.

0.1 1 10 100 400

0.1

100

1000

CURVE BENT TO

MEASURED DATA

10 μs

100 ms

10 ms

1 ms

100 μs

ID, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

RθJC = 4.0 oC/W

TC = 25 oC

F or w ar d B ia s Sa fe

Operating Area for FDPF4D5N10C

Typical Characteristics TJ = 25 °C unless otherwise noted.

FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET

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Figure 13.

10-5 10-4 10-3 10-2 10-1 100101102

102

100

1000

10000

100000

SINGLE PULSE

RθJC = 1.0 oC/W

TC = 25 oC

P(PK), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

S i n g l e P u l s e M a x i m u m

Power Dissipation for FDP4D5N10C

Figure 14.

10-5 10-4 10-3 10-2 10-1 100101102

102

100

1000

10000

100000

SINGLE PULSE

RθJC = 4.0 oC/W

TC = 25 oC

P(PK), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

S i n g l e P u l s e M ax i m u m

Power Dissipation for FDPF4D5N10C

Figure 15.

10-5 10-4 10-3 10-2 10-1 100101102

0.001

0.01

0.1

SINGLE PULSE

DUTY CYCLE-DESCENDING ORDER

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

PDM

NOTES:

ZθJC(t) = r(t) x RθJC

RθJC = 1.0 oC/W

Duty Cycle, D = t1 / t2

Peak TJ = PDM x ZθJC(t) + TC

Junction-to-Case Transient Thermal Response Curve for FDP4D5N10C

Figure 16.

10-5 10-4 10-3 10-2 10-1 100101102

0.001

0.01

0.1

SINGLE PULSE

DUTY CYCLE-DESCENDING ORDER

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

ZθJC(t) = r(t) x RθJC

RθJC = 4.0 oC/W

Duty Cycle, D = t1 / t2

Peak TJ = PDM x ZθJC(t) + TC

PDM

Junction-to-Case Transient Thermal Response Curve for FDPF4D5N10C

Typical Characteristics TJ = 25 °C unless otherwise noted.

FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET

www.onsemi.com

Dimensional Outline and Pad Layout

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TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)