TA8215HQ/LQ
2006-04-28
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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8215HQ,TA8215LQ
18W BTL × 2CH Audio Power Amplifier
The thermal resistance θj−T of TA8215HQ and TA8215LQ
package designed for low thermal resistance, has a high
efficiency of heat radiation.
The temperature rise of chip can be reduced, and the influence
from the degradation of the features due to the temperature rise
at the high output can also be reduced.
This stereo audio power IC, designed for car audio use, has two
built−in channels to reduce the characteristic difference between
L and R channels.
In addition, the functions of stand−by and muting, and a variety
of protection circuits are involved.
Features
• High power
: POUT (1) = 18W (typ.) / channel
(VCC = 14.4V, f = 1kHz, THD = 10%, RL = 4Ω)
: POUT (2) = 15W (typ.) / channel
(VCC = 13.2V, f = 1kHz, THD = 10%, RL = 4Ω)
• Low distortion ratio
: THD = 0.04% (typ.)
(VCC = 13.2V, f = 1kHz, POUT = 1W, RL = 4Ω, GV =
50dB)
• Low noise
: VNO = 0.30mVrms (typ.)
(VCC = 13.2V, RL = 4Ω, GV 50dB, Rg = 0Ω, BW = 20Hz~20kHz)
• Built−in stand−by function (with pin (4) set at low, power is turned off.)
: ISB = 1µA (typ.)
• Built−in muting function (with pin (1) set at low, power is turned off.)
: V(mute) = 1V (typ.)
• Built−in various protection circuits
Protection circuits : Thermal shut down, Over voltage, Out→VCC short, Out→GND short and Out−Out
short.
• Operating supply voltage : VCC = 9~18V
TA8215HQ
TA8215LQ
Weight
HZIP17−P−2.00 : 9.8g (typ.)
HSIP17−P−2.00 : 9.8g (typ.)
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Block Diagram
TA8215HQ, TA8215LQ (GV = 50dB)
Cautions And Application Method
(description is made only on the single channel. )
1. Voltage gain adjustment
This IC has the amplifier construction as shown in Fig.1. The Pre−Amp Amp1 is provided to the primary stage,
and the input voltage is amplified by the Flat Amps, Amp3 and Amp4 of each channel through the phase Amp.
(Amp2) .
Since the input offset is prevented by Pre−Amp when VCC is set to on, this circuit can remarkably reduce the pop
noise.
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The total closed loop gain GV of this IC can be obtained by expression below when the closed loop voltage gain of
Amp1 is GV1.
G
V1 = 20ℓog R2
f
R
R2)
f
(R R1
+
++ (dB) ..... (1)
The closed loop voltage gain of power Amp, Amp3
and Amp4 is fixed at GV3 ≒ G
V4 = 20dB.
Therefore, the total closed loop voltage gain GV is
obtained through BTL connection by the expression
below.
G
V = GV1 + GV3 + 6 (dB) ..... (2)
For example, when Rf = 0Ω, GV is obtained by the
expressions (1) and (2) as shown below.
G
V ≒ 24 + 20 + 6 = 50dB
The voltage gain is reduced when Rf is increased.
(Fig.2)
With the voltage gain reduced, since (1) the oscillation
stability is reduced, and (2) the pop noise changes when
VCC is set to on, refer to the items 3 and 4.
2. Stand−by SW function
By means of controlling pin (4) (stand−by terminal) to
high and low, the power suply can be set to on and off.
The threshold voltage of pin (4) is set at about 3V (typ.),
and the power supply current is about 1µA (typ.) at the
stand−by state.
(4) pin control voltage : V (SB)
Stand−by Power V
(SB) (V)
On Off 0~2
Off On 3~VCC
~Advantage of stand−by SW~
(1) Since VCC can directly be controlled to on, off by the microcomuter, the switching relay can be omitted.
(2) Since the control current is microscopic, the switching relay of small current capacity is satisfactory for
switching.
(4)
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3. Preventive measure against oscillation
For preventing the oscillation, it is advisable to use C4, the condenser of polyester film having small
characteristic fluctuation of the temperture and the frequency.
The resistance R to be series applied to C4 is effective for phase correction of high frequency, and improves the
oscillation allowance.
Since the oscillation allowance is varied according to the causes described below, perform the temperature test to
check the oscillation allowance.
(1) Voltage gain to be used (GV setting)
(2) Capacity value of condenser
(3) Kind of condenser
(4) Layout of printed board
In case of its use with the voltage gain GV reduced or with the feedback amount increased, care must be taken
because the phase−inversion is caused by the high frequency resulting in making the oscillation liable generated.
4. Input offset prevention circuit at VCC→ON
Having Pre−Amp (Amp1) mounted on the primary stage, this IC contains the circuit for making the Amp1 input
voltage and the NF terminal voltage equipotential.
Therefore, the offset voltage produced at the input stage is suppressed to prevent the pop noise at VCC→ON. The
capacity values of the input and NF condense (C1 and C2) shall be set according to the gain to be used.
(Reference) (A) at GV = 50dB (Rf = 0Ω) : C1 = 4.7µF, C2 = 47µF
(B) at GV = 40dB (Rf = 470Ω) : C1 = 3.3µF, C2 = 33µF
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5. Muting function
Through setting pin (1) (mute terminal) at about 1V or less, muting becomes possible.
The interval circuit of IC is shown in Fig.4.
When pin (1) is set to low, Q1 and Q2 are turned on, the charge of the ripple condenser is discharged and the bias
is cut. The mute amount of 60dB or over can be obtained.
Since this muting function rapidly discharges the charge of the ripple filter capacitor of pin (8), the pop noise is
generated by the DC fluctuation of the bias section.
Therefore, this muting function is not appropriate to the audio muting but is effective in muting at VCC→on.
6. External part list and description
Influence
Symbol Recommended
Value Feature Smaller Than
Recommended Value
Larger Than
Recommended Value
Remarks
C1 4.7µF
DC
blocking Related to pop noise at VCC→on. Related to gain.
Refer to item 4.
Related to pop noise at VCC→on.
C2 47µF
Feedback
condenser
Determination of low cut−off frequency.
C
2 =
f
R
L
f2
1
・π
―
C3 220µF
Ripple
reduction
Time constant is small
at VCC→on or off.
Time constant is large
at VCC→on or off. ―
C4 0.12µF
Oscillation
prevention
Made liable to
oscillate.
Oscillation allowance
improved. Refer to item 3.
C5 1000µF
Ripple
filter
For filtering power supply hum and ripple.
Large at using AC rectified power supply.
Small at using DC power supply.
―
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Peak supply voltage (0.2s) VCC surge 50 V
DC supply voltage VCC DC 25 V
Operating supply voltage VCC opr 18 V
Output current (peak) IO (peak) 9 A
Power dissipation PD 50 W
Operating temperature Topr −30~85 °C
Storage temperature Tstg −55~150 °C
Electrical Characteristics
(Unless otherwise specified, VCC = 13.2V, RL = 4Ω, f = 1kHz, Ta = 25°C)
Characteristic Symbol
Test
Cir−
cuit
Test Condition Min. Typ. Max. Unit
Quiescent supply current ICCQ ― V
IN = 0 ― 120 250 mA
POUT (1) ― V
CC = 14.4V, THD = 10% ― 18 ―
Output power
POUT (2) ― THD = 10% 11 15 ―
W
Total harmonic distortion THD ― P
OUT = 1W ― 0.04 0.4 %
Voltage gain GV ― ― 48 50 52 dB
Output noise voltage VNO ― R
g = 0Ω, BW = 20Hz~20kHz ― 0.30 0.70 mVrms
Ripple rejection ratio R.R. ― fripple = 100Hz, Rg = 600Ω 40 54 ― dB
Input resistance RIN ― ― ― 30 ― kΩ
Output offset voltage Voffset ― V
IN = 0 −0.3 0 0.3 V
Current at stand−by state ISB ― ― ― 1 10 µA
Cross talk C.T. ― Rg = 600Ω,
VOUT = 0.775Vrms (0dBm) ― 60 ― dB
Pin (4) control voltage V(SB) ― Stand−by → off
(power→on) 2.5 ― V
CC V
Pin (1) control voltage V(MUTE) ― Mute→on
(power→off) ― 1.0 2.0 V
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Test circuit
TA8215HQ, TA8215LQ (GV = 50dB)
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Package Dimensions
Weight : 9.8g (typ.)
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Package Dimensions
Weight : 9.8g (typ.)
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• Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over
current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or
load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the
effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time
and insertion circuit location, are required.
• If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or
the negative current resulting from the back electromotive force at power OFF. For details on how to connect a
protection circuit such as a current limiting resistor or back electromotive force adsorption diode, refer to individual
IC datasheets or the IC databook. IC breakdown may cause injury, smoke or ignition.
• Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection
function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
• Carefully select external components (such as inputs and negative feedback capacitors) and load components
(such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as
input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to
a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over
current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied
Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
• Over current Protection Circuit
Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all
circumstances. If the Over current protection circuits operate against the over current, clear the over current status
immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum
ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In
addition, depending on the method of use and usage conditions, if over current continues to flow for a long time
after operation, the IC may generate heat resulting in breakdown.
• Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the Thermal shutdown circuits
operate against the over temperature, clear the heat generation status immediately. Depending on the method of
use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit
to not operate properly or IC breakdown before operation.
• Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, please design the device so that
heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in
IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into
considerate the effect of IC heat radiation with peripheral components.
• Installation to Heat Sink
Please install the power IC to the heat sink not to apply excessive mechanical stress to the IC. Excessive
mechanical stress can lead to package cracks, resulting in a reduction in reliability or breakdown of internal IC
chip. In addition, depending on the IC, the use of silicon rubber may be prohibited. Check whether the use of
silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and
heat sink installation, refer to individual technical datasheets or IC databooks.
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RESTRICTIONS ON PRODUCT USE 060116EBF
• The information contained herein is subject to change without notice. 021023_D
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk. 021023_B
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others. 021023_C
• The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E
• This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product. 030619_R
About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-37Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
