Thyristors and Triacs PRODUCT GUIDE 1 Overview Features Thyristors GeneralPurpose Thyristors A variety of non-insulated and insulated thyristors is available. Non-insulated thyristors range from 0.3 A to 10 A and insulated thyristors range from 3 A to 25 A. These can be applied to tape packing, lead forming and other applications. In the insulated thyristors, there is no exposed metal on the resin surface. The standard products have an isolation voltage of 1500 V and a high-isolation voltage of 2500 V. SpecialPurpose Thyristor Thyristor for high-speed, stroboscopic, TV and discharge lamp applications 4 Triacs GeneralPurpose Triacs A variety of non-insulated and insulated triacs is available. Non-insulated thyristors range from 0.8 A to 16 A and insulated thyristors range from 2 A to 25 A. In the insulated thyristors, there is no exposed metal on the resin surface. The standard products have an isolation voltage of 1,500 V and a high-isolation voltage of 2,500 V. SpecialPurpose Triacs We have triacs for high-rush-current loads, too, with greatly improved ability to withstand repetitive rush currents. 5 1 Overview Symbols and Terms Symbols Usage Definition VRRM Repetitive peak reverse voltage Maximum allowable instantaneous value of reverse voltage repeatedly applicable between anode and cathode VDRM Repetitive peak OFF-state voltage Maximum allowable instantaneous value of OFF-state voltage repeatedly applicable between anode and cathode (betweer T1 and T2 for triacs) IT(AV) Average ON-state current Average value of continuously conductible ON-state current (applied to thyristors and stipulated by a half sine wave of commercial frequency) IT(RMS) RMS ON-state current RMS value of continuously conductible ON-state current (applied to triacs and stipulated by whole sine waves of commercial frequency) di/dt Critical rate of rise of ON-state current Maximum rate of rise of ON-state current allowable when a device is turned on ITSM Peak one-cycle surge ON-state current Peak one-cycle ON-state current allowable for non-repetitive conduction ITRM Repetitive peak surge ON-state current Peak ON-state current allowable for repetitive conduction VFGM (VGM) Peak forward gate voltage (peak gate voltage) Maximum allowable instantaneous value of forward gate voltage repeatedly applicable between gate and cathode (between gate and T1 for triacs) VRGM Peak reverse gate voltage Maximum allowable instantaneous value of reverse gate voltage repeatedly applicable between gate and cathode IGM Peak forward gate current Maximum allowable instantaneous value of forward gate current repeatedly applicable between gate and cathode (between gate and T1 for triacs) PGM Peak gate power dissipation Maximum allowable instantaneous value of gate power dissipation PG(AV) Average gate power dissipation Allowable average value of gate power dissipation IRRM Repetitive peak reverse current Leakage current flowing at the time of reverse voltage application between anode and cathode IDRM Repetitive peak OFF-state current Leakage current flowing at the time of OFF-state voltage application between anode and cathode (between T1 and T2 for triacs) VTM Peak ON-state voltage Peak ON-state voltage value between anode and cathode (between T1 and T2 for triacs) when the device is in ON-state. VGT Gate trigger voltage Minimum gate voltage necessary to turn on devices IGT Gate trigger current Minimum gate current necessary to turn on devices tgt Turn-ON time Duration from gate current conduction to ON state of devices tq Turn-OFF time Duration to device's recovery of its forward current blocking ability after ON-state current decreases and becomes zero dv/dt Critical rate of rise of OFF-state voltage Maximum rate of rise of OFF-state voltage which can be applied without switching to ONstate (dv/dt)c Critical rate of rise of OFF-state voltage at the time of commutation Maximum rate of rise of OFF-state voltage not allowing a device to switch ON state even when reverse voltage is applied immediately after the ON-state current decreases and becomes zero Rth(j-a), Rth(j-c) Thermal resistance Temperature difference per watt between two points (between junction and surrounding space and between junction and case) when a device is thermally balanced VISOL Isolation voltage Voltage applicable between lead and case when the device has an insulated package (usually AC, and indicated by its r.m.s.) * Every item is specified under particular conditions which are stated in the technical data sheet for each product. For the conditions, please refer to each. 6 Identification Example 1. SM16JZ47A (Insulated 16A Triac) SM: Triac SF: Thyristor RSF: Thyristor with built-in resistor Current rating 16: 16 A Voltage rating G: 400 V J: 600 V L: 800 V Z: Insulated package NONE: Non-insulated package Package number Version letter Example 2. USM6J48 (Surface-Mounting 6A Triac) U: Surface-mount package NONE: Lead insertion package 7 2 Development Trends AC POWER CONTROL Complex (AC switch) Discrete (triac) Optical link (input and output insulated), space saving Highisolation voltage Performance enhanced High ability to withstand rush current Highvoltage Improved ability to withstand noise Highsensitivity Others Surface mounting and tape packing Planar pellet Improved isolation voltage performance (resin potting) High-rush-current-withstanding triac Pellet evolution (illustration) Standard product N SiO2 SiO2 P Ip=120A Planar N High-isolationvoltage product N Glass P P N N Glass passivation P Package: TO-220NIS Electrode Standard product 1500 V 8 Glass High-isolationvoltage product 2500 V * * Strong ability to withstand repetitive surge currents Assured number of repetitive cycles I p = 120 A n = 100 kcycle N N Glass Glass passivation (mesa type) Glass P N P N 9 3 New Product Information High-Sensitivity Triac SM2GZ47A Series for 1 A Loads High-Sensitivity with Insulated Package Package Appearance Overview Toshiba has developed a high-sensitivity triac capable of controlling 1 A RMS; without a heat sink. It is most suitable for controlling apparatus such as heaters rated less than 100 W. Features I = 5 mA max (SM2GZ47A) ** High-sensitivity: Capable of controlling 1 A RMS; without a heat sink. I = 1 A @Ta = 65C; without a heat sink. Insulated package: model TO-220NIS * GT T (RMS) TO-220NIS Main Ratings and Characteristics Item Symbol Rating and Characteristics Condition RMS ON-state current IT(RMS) 1 A Ta = 65C; without a heat sink Gate trigger current SM2GZ47 8 mA max IGT SM2GZ47A VD = 12 V, I, II, III quadrants 5 mA max Repetitive peak OFF-state voltage VDRM 400 V/600 V Peak one-cycle surge ON-state current ITSM 8 A f = 50 Hz Ta Max - IT (RMS) without a heat sink Conditions No heat sink; device itself radiates * heat Leadforming: LB107 * Paper Epoxy board used * t = 1.6 mm * Soldering land: 2 mmo * 100 80 60 40 t Maximum allowable ambient temperature Ta Max (C) 120 20 5mm 0 0 0.5 1.0 1.5 RMS ON-state current IT(RMS) (A) 10 High-Voltage (800 V) Triac 1A~10A Series High-Voltage: VDRM = 800 V Package Appearance Overview Toshiba has developed a high-voltage triac with 800 V-OFFstate- voltage rating, which is most suitable for high-voltage applications, including reversible rotation motor in 200 V-linevoltage. Features V = 800 V * High-voltage: Insulated package: TO-220NIS type (2A, *5A, 8A, 10A) * V = 1500 V (AC, t = 60 s) * Compact package: TO-92 type (1A) DRM ISOL *Under development Example Application (washing machine) Triac SM1L43 or SM2LZ47 Surge absorption AC200 V Source Valve Triac SM1L43 or SM2LZ47 Triac SM1L43 or SM2LZ47 Triac SM5LZ47 or SM8LZ47 or SM10LZ47 Drain magnet Softer Valve - + S5688J M Washing motor (forward rotation, reverse rotation, spin-dry) Main Ratings and Characteristics: SM10LZ47 Item Symbol Rating and Characteristics Condition Repetitive peak OFF-state voltage VDRM 800 V RMS ON-state current IT(RMS) 10 A Peak one-cycle surge ON-state current ITSM 100 A f = 50 Hz, non-repetitive Gate trigger current IGT 30 mA ( max) VD = 12 V, RL = 20 Peak ON-state voltage VTM 1.5 V (max) ITM = 15 A Repetitive peak OFF-state current IDRM 20 A (max) VDRM = 800 V 11 3 New Product Information High-Isolation-Voltage Version TO-220NIS (E) Series TO-220NIS package with improved insulation performance Package Appearance Overview Toshiba has developed a high-isolation-voltage version of the TO-220NIS insulated package. This is known as the (E) Series package. The new package boasts insulation performance far superior to that of the standard package, yet is the same size. Features is assured * High-isolation-voltage Isolation voltage: V = 2500 V RMS (AC, t = 60 s) ISOL * Lightning surge: 1.2 x 50 s Vp = 6 kV Corresponds to all TO-220NIS Model basically For example, SM16JZ47 (E) Thyristor Triac Structural Comparison Standard product Resin potting Gap Metal frame 12 E Series Metal frame Insulation Performance Test AC insulation test Lightning surge test *Ta = 25C *RH 60% *AC 2500 VRMS applied, t = 60 s *Ta = 25C *RH 60% *One cycle applied as shown below Marking 2.84 mm min Conductive section p = 6 kV Exponential fall waveform (Electrodes shorted) 50% * p t 1.3 mm min 1.2 s 50 s Voltage applied to both ends Test Data 1 (reference) AC Insulation Test Standard product E Series (pcs) (pcs) 10 10 8 8 6 6 4 4 2 2 5 kV or more for all tests n = 20 pcs 0 0 0 1 Lightning Surge Test 2 3 V ISOL (kV) 4 5 0 1 Standard product (pcs) 2 3 V ISOL ( kV ) 4 5 E Series (pcs) n = 16 pcs 10 10 8 8 6 6 4 4 2 2 10 kV or more for all tests n = 20 pcs 0 0 0 2 4 6 p ( kV) 8 10 0 2 4 6 8 10 p ( kV) (Note: Test results may differ depending upon the surrounding environment, measuring jigs, etc. Standard products are tested during installation with M3 screws; there is no metal plate on the mark surface.) 13 3 New Product Information High-Rush-Current-Withstanding Triac S6903G Series Enhanced ability to withstand repetitive rush currents Overview Package Appearance Toshiba has developed a high-rush-current-withstanding triac with greatly enhanced repetitive rush-current-withstanding ability. It is now possible to provide assurances (previously difficult) as to the level of repetitive surge current and the number of repetitive cycles. This triac is most suitable for controlling actuators that generates high-rush current. Features ability to withstand repetitive surge current * Strong Assurance of the number of repetitive cycles is available * Main Ratings and Characteristics 14 Item Symbol Rating and Characteristics Condition Repetitive surge ON-state current (Figure 1) ITRM 120 A n = 100 kcycle, Tc = 45 C Non-repetitive surge On-state current ITSM 200 A f = 60 Hz, Tc = 125C RMS ON-state current IT(RMS) 20 A Whole sine waves Tc = 100C Gate trigger current IGT 30 mA max VD = 12 V, RL = 20 Thermal resistance (between junction and case) Rth (j-c) 1C / W max Alternating current Figure 1. Repetitive Surge ON-State Current I = 120 A 20 ms 3 s or longer Ip = 120 A (f = 50 Hz) at Tc = 45C Maximum repetitive frequency n = 100 kcycles (Repetitive cycle T = 3 s or longer) Handling Precautions When used under conditions other than those recommended, devices may be damaged. They may even ignite. Please use devices within their recommended conditions. If they must be used under other conditions, add protective circuits (such as phase controls to lessen starting stresses) and provide a warranty when shipping. Please note that if the devices are used under conditions that are not recommended, loss of human life, bodily injury or damage to property to third parties must be settled between you and the third party. Repetitive Surge Current Test Data (reference) Test conditions * IP = 130 A (f = 50 Hz) * Tc = 40C *T =3s 7 SM16G45 Number of destroyed samples (pcs) Number of destroyed samples (pcs) S6903G 6 5 4 3 2 1 0 100 200 300 400 500 600 700 800 900 1000 Number of destroyed cycles (kcycles) 7 6 5 4 3 2 1 0 100 200 300 400 500 600 700 800 900 1000 Number of destroyed cycles (kcycles) 15 4 Selection Chart General-Purpose Thyristors Repetitive peak OFF-state voltage and repetitive peak reverse voltage VDRM and VDRM (V) IT (AV) (A) 400 600 IGT (mA) Packeage Dimensions Page 0.3 SF0R3G42 - 0.2 1 18 SF0R5G43 SF0R5J43 0.2 1 18 (Note 1) RSF05G1-1P/3P/5P - 1/0.4/0.25 1 18 USF05G49 - 0.2 2 19 (Note 1) URSF05G49-1P/3P/5P - 1/0.4/0.25 2 19 SF3G48 SF3J48 10 5 18 USF3G48 USF3J48 10 6 19 SF5G42 SF5J42 0.2 3 18 SF5G41A SF5J41A 15 3 18 SF5G48 SF5J48 10 5 18 SF5G49 SF5J49 0.07 8 18 USF5G48 USF5J48 10 6 19 USF5G49 USF5J49 0.07 9 19 SF8G41A SF8G41A 15 3 18 SF8G48 SF8J48 10 5 18 USF8G48 USF8J48 10 6 19 SF10G41A SF10J41A 15 3 18 SF10G48 SF10J48 10 5 18 USF10G48 USF10J48 10 6 19 Average ON-state current 0.5 3 5 8 10 (Note 1) Resistance (RGK ) built-in Thyristor -1P : RGK = 1 k -3P : RGK = 2.7 k -5P : RGK = 5.1 k Insulated Thyristors Average ON-state current Repetitive peak OFF-state voltage and repetitive peak reverse voltage VDRM and VDRM (V) IT (AV) (A) 400 600 IGT (mA) Packeage Dimensions Page 3 SF3GZ47 SF3JZ47 10 4 19 5 SF5GZ47 SF5JZ47 10 4 19 8 SF8GZ47 SF8JZ47 10 4 19 10 SF10GZ47 SF10JZ47 10 4 19 16 SF16GZ51 SF16JZ51 15 7 19 25 SF25GZ51 SF25JZ51 20 7 19 Special-Purpose Thyristors 200 0.3 Trigger 0.3 Chopper High speed Strobe Bypass TV Discharge Lamp 16 VDRM and VDRM (V) IT(AV) (A) Usage Packeage Dimensions Page 6 s 1 24 1.5 s 1 24 ITRM = 350 A 3 24 ITRM = 1300 A 5 24 ITRM = 900 A 9 24 3.5 s 4 24 5 24 Main Features 400 800 SH0R3D42 - - tq - S6370 - tgt 8 - SH8G41 - 8 - S6744 - - - S6A35 - 3 - S6785G - tq - - - S6992 IP = 500 A, di/dt = 750 A/s - - - S6A13 IP = 500 A, di/dt = 750 A/s Diode included between cathode and anode 24 Triacs Repetitive peak OFF-state voltage VDRM and VDRM (V) IT (RMS) (A) 0.8 RMS ON-state current 1 3 6 8 12 16 IGT (mA) Packeage Dimensions Page 400 600 800 SM08G43 - - 3 1 20 SM1G43 SM1J43 SM1L43 *5 (400 V, 600 V) 10 (800 V) 1 20 SM3G45 SM3J45 - 20 3 20 SM3G48 SM3J48 - 20 5 21 USM3G48 USM3J48 - 20 6 23 SM6G45/A SM6J45/A - 30/20 3 20 SM6G48/A SM6J48/A - 30/20 5 21 USM6G45/A USM6J45/A - 30/20 6 23 SM8G45/A SM8J45/A - 30/20 3 20 SM8G48/A SM8J48/A - 30/20 5 21 USM8G45/A USM8J45/A - 30/20 6 23 SM12G45/A SM12J45/A - 30/20 3 20 SM12G48/A SM12J48/A - 30/20 5 21 USM12G45/A USM12J45/A - 30/20 6 23 SM16G45/A SM16J45/A - 30/20 3 20 SM16G48/A SM16J48/A - 30/20 5 21 USM16G45/A USM16J45/A - 30/20 6 23 * IGT = 3 mA, 7 mA models are also available. Insulation Triac Repetitive peak OFF-state voltage RMS ON-state current IT (RMS) (A) VDRM and VDRM (V) IGT (mA) Packeage Dimensions Page SM2LZ47 8/5 (400 V, 600 V) 10 (800 V) 4 22 SM3JZ47 - 20 4 22 - - SM5LZ47 * 30 4 22 6 SM6GZ47/A SM6JZ47/A - 30/20 4 22 8 SM8GZ47/A SM8JZ47/A SM8LZ47 30/20 (400 V, 600 V) 30 (800 V) 4 22 10 - - SM10LZ47 30 4 22 12 SM12GZ47/A SM12JZ47/A - 30/20 4 22 SM16GZ47/A SM16JZ47/A - 30/20 4 22 SM16GZ51 SM16JZ51 - 30 7 22 SM25GZ51 SM25JZ51 - 30 7 400 600 800 2 SM2GZ47/A SM2JZ47/A 3 SM3GZ47 5 16 25 22 * Under development Special-Purpose Triacs Usage High speed VDRM and VDRM (V) IT (RMS) (A) 200 400 20 S6903G S6903J Main Features Packeage Dimensions Page ITRM = 120 A 3 31 17 5 Product Lines 5.1 General-Purpose Thyristors (Non-insulated) Maximum Ratings IT(AV) (A) Electrical Characteristics (Ta=25C) ITSM (A) VDRM, VRRM (V) IDRM, IGT IRRM (mA) (mA) Package Package dv/dt Dimensions Number ITM (A) (V/ms) TC (C) 400 600 50 Hz 60 Hz Tj (C) SF0R3G42 - 9 9.9 -40 to 125 0.1 7 8 -40 to 125 0.05 0.2 0.8 1.5 1 - - 1 13-5A1D - 9 10 -40 to 125 0.01 1 0.8 1.5 1 200 (typ.) 25 1 13-5A1A - 9 10 -40 to 125 0.01 0.4 0.8 1.5 1 70 (typ.) 25 1 13-5A1A RSF05G1-5P - 9 10 -40 to 125 0.01 0.25 0.8 1.5 1 40 (typ.) 25 1 13-5A1A SF5G42 SF5J42 80 88 -40 to 125 2 0.2 0.8 1.6 15 50 (typ.) 75 3 13-10G1B SF5G41A SF5J41A 80 88 -40 to 125 0.01 15 1.0 1.6 15 100 125 3 13-10G1B 8 SF8G41A SF8J41A 120 132 -40 to 125 0.01 15 1.0 1.6 25 100 125 3 13-10G1B 10 SF10G41A SF10J41A 160 176 -40 ot 125 0.01 15 1.0 1.6 30 100 125 3 13-10G1B VGT (V) VTM (V) 0.2 0.8 2.0 2 - - 1 13-5A1A Package Appearance Note 1 0.3 Note 1 SF0R5G43 SF0R5J43 Note 2 RSF05G1-1P 0.5 Note 3 RSF05G1-3P TO-92 Note 4 Note 1 5 3 SF3G48 SF3J48 50 55 -40 to 125 0.01 10 1.0 1.5 12 50 (typ.) 125 5 13-10J1B 5 SF5G48 SF5J48 80 88 -40 to 125 0.01 10 1.0 1.5 15 50 (typ.) 125 5 13-10J1B 8 SF8G48 SF8J48 120 132 -40 to 125 0.01 10 1.0 1.5 25 50 (typ.) 125 5 13-10J1B 10 SF10G48 SF10J48 160 176 -40 to 125 0.01 10 1.0 1.5 30 50 (typ.) 125 5 13-10J1B 5 SF5G49 SF5J49 65 - -40 to 125 0.02 0.07 0.8 1.6 12 50 (typ.) 75 8 13-7F1A TO-220AB TO-220FL DP Note 1: Tj = 125C 18 Note 2: RGK = 1 k Note 3: RGK = 2.7 k Note 4: RGK = 5.1 k 5.1 General-Purpose Thyristors (Insulated and surface-mount) Maximum Ratings IT(AV) (A) VDRM, VRRM (V) Electrical Characteristics (Ta=25C) ITSM (A) VISOL 50 Hz 60 Hz (V) Tj (C) IDRM, IGT VGT IRRM (mA) (mA) (V) UL Package Package dv/dt VTM Dimensions Number Listing Number (V) ITM (A) (V/ms) TC (C) 400 600 3 SF3GZ47 SF3JZ47 50 55 1500 -40 to 125 0.01 10 1.0 1.5 12 50 (typ.) 125 4 13-10H1B E87989 5 SF5GZ47 SF5JZ47 80 88 1500 -40 to 125 0.01 10 1.0 1.5 15 50 (typ.) 125 4 13-10H1B E87989 8 SF8GZ47 SF8JZ47 120 132 1500 -40 to 125 0.01 10 1.0 1.5 25 50 (typ.) 125 4 13-10H1B E87989 10 SF10GZ47 SF10JZ47 160 176 1500 -40 to 125 0.01 10 1.0 1.5 30 50 (typ.) 125 4 13-10H1B E87989 16 SF16GZ51 SF16JZ51 250 275 1500 -40 to 125 0.02 15 1.5 1.5 50 50 (typ.) 125 7 13-16A1B Under application 25 SF25GZ51 SF25JZ51 350 385 1500 -40 to 125 0.02 20 1.5 1.5 80 50 (typ.) 125 7 13-16A1B Under application Package Appearance TO-220NIS TO-3P (N)IS - 9 10 - -40 to 125 0.01 0.2 0.8 1.5 1 200 (typ.) 25 2 13-5B1A - - 9 10 - -40 to 125 0.01 1 0.8 1.5 1 200 (typ.) 25 2 13-5B1A - - 9 10 - -40 to 125 0.01 0.4 0.8 1.5 1 70 (typ.) 25 2 13-5B1A - URSF05G49-5P - 9 10 - -40 to 125 0.01 0.25 0.8 1.5 1 40 (typ.) 25 2 13-5B1A - 3 USF3G48 USF3J48 50 55 - -40 to 125 0.01 10 1.0 1.5 12 50 (typ.) 125 6 13-10J2B - 5 USF5G48 USF5J48 80 88 - -40 to 125 0.01 10 1.0 1.5 15 50 (typ.) 125 6 13-10J2B - 8 USF8G48 USF8J48 120 132 - -40 to 125 0.01 10 1.0 1.5 25 50 (typ.) 125 6 13-10J2B - USF05G49 Note 1 URSF05G49-1P 0.5 Note 2 URSF05G49-3P PW-MINI Note 3 TO-220SM 10 USF10G48 USF10J48 160 176 - -40 to 125 0.01 5 USF5G49 65 - - -40 to 125 0.02 0.07 USF5J49 10 1.0 1.5 30 50 (typ.) 125 6 13-10J2B - 0.8 1.6 12 50 (typ.) 75 9 13-7F2A - DP Note 1: RGK = 1 k Note 2: RGK = 2.7 k Note 3: RGK = 5.1 k 19 5 Product Lines 5.2 General-Purpose Triacs (Non-insulated) Maximum Ratings IT(RMS) (A) Electrical Characteristics (Ta=25C) ITSM (A) VDRM (V) 50 Hz 60 Hz Tj (C) IDRM (mA) IGT (mA) VGT (V) I, II, III I, II, III 3 400 600 800 0.8 SM08G43 - - 6 6.6 -40 to 125 0.01 1 SM1G43 SM1J43 SM1L43 8 8.8 -40 to 125 0.01 Note 2 3 SM3G45 SM3J45 - 30 33 -40 to 125 SM6G45 SM6J45 - 60 66 -40 to 125 SM6G45A SM6J45A - 60 66 -40 to 125 SM8G45 SM8J45 - 80 88 -40 to 125 SM8G45A SM8J45A - 80 88 -40 to 125 SM12G45 SM12J45 - 120 132 -40 to 125 0.02 5 (400 V, 600 V) 10 (800 V) Package Package VTM (dv/dt)c Dimensions Number (V) ITM (A) (V/ms) Package Appearance Note 2 1.5 1.5 1.2 - 1 13-5A1E 2 1.5 1.5 - 1 13-5A1E TO-92 20 1.5 1.5 4.5 10 3 13-10G1A 30 2 1.5 9 10 3 13-10G1A 20 1.5 1.5 9 4 3 13-10G1A 30 2 1.5 12 10 3 13-10G1A 20 1.5 1.5 12 4 3 13-10G1A 30 2 1.5 17 10 3 13-10G1A Note 1 2 6 Note 1 2 Note 1 2 8 Note 1 2 Note 1 2 TO-220AB 12 Note 1 SM12G45A SM12J45A SM16G45 SM16J45 - 120 132 -40 to 125 2 20 1.5 1.5 17 4 3 13-10G1A - 150 165 -40 to 125 0.02 30 1.5 1.5 25 10 3 13-10G1A - 150 165 -40 to 125 0.02 20 1.5 1.5 25 4 3 13-10G1A 16 SM16G45A SM16J45A Note 1: Tj = 125C 20 Note 2: II, III mode only 5.2 General-Purpose Triacs (Non-insulated) Maximum Ratings IT(RMS) (A) 3 VDRM (V) Electrical Characteristics (Ta=25C) ITSM (A) IDRM (mA) IGT (mA) VGT (V) I, II, III I, II, III Package Package (dv/dt)c Dimensions Number ITM (A) (V/ms) 400 600 50 Hz 60 Hz Tj (C) SM3G48 SM3J48 30 33 -40 to 125 0.02 20 1.5 1.5 4.5 10 5 13-10J1A SM6G48 SM6J48 60 66 -40 to 125 0.02 30 1.5 1.5 9 10 5 13-10J1A SM6G48A SM6J48A 60 66 -40 to 125 0.02 20 1.5 1.5 9 4 5 13-10J1A SM8G48 SM8J48 80 88 -40 to 125 0.02 30 1.5 1.5 12 10 5 13-10J1A SM8G48A SM8J48A 80 80 -40 to 125 0.02 20 1.5 1.5 12 4 5 13-10J1A SM12G48 SM12J48 120 132 -40 to 125 0.02 30 1.5 1.5 17 10 5 13-10J1A 120 132 -40 to 125 0.02 20 1.5 1.5 17 4 5 13-10J1A 150 165 -40 to 125 0.02 30 1.5 1.5 25 10 5 13-10J1A 150 165 -40 to 125 0.02 20 1.5 1.5 25 4 5 13-10J1A VTM (V) Package Appearance 6 8 TO-220FL 12 SM12G48A SM12J48A SM16G48 SM16J48 16 SM16G48A SM16J48A 21 5 Product Lines 5.2 General-Purpose Triacs (Insulated) Maximum Ratings IT(RMS) (A) 2 Electrical Characteristics (Ta = 25C) ITSM (A) VDRM (V) Tj (C) VGT IGT IDRM (mA) (V) (mA) I, II, III I, II, III VTM (V) UL Package Package (dv/dt)c Dimensions Number Listing Number ITM (A) (V/ms) 400 600 800 50 Hz 60 Hz SM2GZ47 SM2JZ47 - 8 8.8 -40 to 125 0.02 8 1.5 1.7 3 - 4 13-10H1A - - 8 8.8 -40 to 125 0.02 5 1.5 1.7 3 - 4 13-10H1A - - SM2GZ47A SM2JZ47A - - SM2LZ47 8 8.8 -40 to 125 0.02 10 1.5 2.0 3 5 4 13-10H1A 3 SM3GZ47 SM3JZ47 - 30 33 -40 to 125 0.02 20 1.5 1.5 4.5 10 4 13-10H1A E87989 5 - - SM5LZ47* 50 - -40 to 125 0.02 30 1.5 1.5 8 10 4 13-10H1A SM6GZ47 SM6JZ47 - 60 66 -40 to 125 0.02 30 1.5 1.5 9 10 4 13-10H1A E87989 - 60 66 -40 to 125 0.02 20 1.5 1.5 9 4 4 13-10H1A E87989 - 80 88 -40 to 125 0.02 30 1.5 1.5 12 10 4 13-10H1A E87989 - 80 88 -40 to 125 0.02 20 1.5 1.5 12 4 4 13-10H1A E87989 Package Appearance - 6 SM6GZ47A SM6JZ47A SM8GZ47 8 10 SM8JZ47 SM8GZ47A SM8JZ47A - - SM8LZ47 70 80 -40 to 125 0.02 30 1.5 1.5 12 10 4 13-10H1A - - - SM10LZ47 100 110 -40 to 125 0.02 30 1.5 1.5 15 10 4 13-10H1A - SM12GZ47 SM12JZ47 - 120 132 -40 to 125 0.02 30 1.5 1.5 17 10 4 13-10H1A E87989 - 120 132 -40 to 125 0.02 20 1.5 1.5 17 4 4 13-10H1A E87989 - 150 165 -40 to 125 0.02 30 1.5 1.5 25 10 4 13-10H1A E87989 - 150 165 -40 to 125 0.02 20 1.5 1.5 25 4 4 13-10H1A E87989 TO-220NIS 12 SM12GZ47A SM12JZ47A SM16GZ47 16 25 SM16JZ47 SM16GZ47A SM16JZ47A SM16GZ51 SM16JZ51 - 150 165 -40 to 125 0.02 30 1.5 1.5 25 10 7 13-16A1A E87989 SM25GZ51 SM25JZ51 - 230 253 0.02 30 1.5 1.5 40 10 7 13-16A1A E87989 TO-3P(N)IS 22 * Under development 5.2 General-Purpose Triacs (Surface-mount) Maximum Ratings IT(RMS) (A) 3 VDRM (V) Electrical Characteristics (Ta = 25C) ITSM (A) IDRM (mA) IGT (mA) VGT (V) I, II, III I, II, III Package Package (dv/dt)c Dimensions Number (V/ms) 400 600 50 Hz 60 Hz Tj (C) USM3G48 USM3J48 30 33 -40 to 125 0.02 20 1.5 1.5 4.5 10 6 13-10J2A USM6G48 USM6J48 60 66 -40 to 125 0.02 30 1.5 1.5 9 10 6 13-10J2A 60 66 -40 to 125 0.02 20 1.5 1.5 9 4 6 13-10J2A 80 88 -40 to 125 0.02 30 1.5 1.5 12 10 6 13-10J2A USM8G48A USM3J48A 80 88 -40 to 125 0.02 20 1.5 1.5 12 4 6 13-10J2A USM12G48 USM12J48 120 132 -40 to 125 0.02 30 1.5 1.5 17 10 6 13-10J2A USM12G48A USM12J48A 120 132 -40 to 125 0.02 20 1.5 1.5 17 4 6 13-10J2A USM16G48 USM16J48 150 165 -40 to 125 0.02 30 1.5 1.5 25 10 6 13-10J2A USM16G48A USM16J48A 150 165 -40 to 125 0.02 20 1.5 1.5 25 4 6 13-10J2A VTM (V) ITM (A) Package Appearance 6 USM6G48A USM6J48A USM8G48 USM8J48 8 TO-220SM 12 16 23 5 Product Lines 5.3 Special-Purpose Thyristors * High-Speed IT(AV) (A) VDRM, VRRM (V) 200 400 Maximum Ratings ITSM (A) VDSM (V) 50 Hz 60 Hz Electrical Characteristics (Ta = 25C) Package Package VTM dv/dt VGT tq (V) (ms) (V) ITM (A) (V/ms) TC (C) Dimensions Number IDRM IGT (mA) (mA) Tj (C) Package Appearance Note 1 0.3 * TV IT(AV) (A) SH0R3D42 - 250 7 -40 to 125 7.7 0.1 1 0.9 6 1.8 2 15 110 1 13-5A1A TO-92 Note 1 : Tj = 125C Maximum Ratings ITSM (A) VDRM, VRRM (V) 400 50 Hz 60 Hz Tj (C) IDRM, IRRM (mA) (Tj=125C) -40 to 125 1 2 Electrical Characteristics (Ta = 25C) VTM dv/dt tqt tq VGT (V) (ms) (ms) (V) ITM (A) (V/ms) IGT (mA) TC (C) Package Package Dimensions Number Package Appearance TO-220NIS Note 1 3 S6785G 60 25 1.5 3 3.5 2 20 100 125 VG=-2.5V 4 13-10H1B Note 1: upper value = IDRM, lower value = IRRM * High-di/dt Maximum Ratings ITRM di/dt (A) (A/ms) VDRM (V) 800 S6992 3 66 Tj (C) IDRM (mA) Electrical Characteristics (Ta = 25C) IGT VTM dv/dt VGT (mA) (V) (V/ms) (V) ITM (A) TC (C) Package Package Dimensions Number 500 750 -40 to 125 0.01 20 1.0 1.5 25 - - 5 13-10J1B 500 750 -40 to 125 0.01 30 1.0 1.5 25 50 125 5 13-10J1B Package Appearance Note 1 S6A13 TO-220FL Note 1: Diode included between cathode and anode * Strobe Maximum Ratings Application VDRM, VRRM (V) ITSM (A) ITRM (A) 400 50 Hz 60 Hz Electrical Characteristics (Ta = 25C) IGT VTM VGT IH (mA) (V) (V) (mA) ITM (A) di/dt (A/ms) Tj (C) - -40 to 125 Cc (mF) Package Package Dimensions Number Package Appearance TO-92 Note 1 Trigger 3 S6730 9 - 9.9 0.8 0.2 2 4 (typ.) 2 - 3 13-10G1B 5 13-10J1B 1 13-5A1A TO-220AB Chopper SH8G41 - - S6744 200 220 350 100 -40 to 125 (CM 1000 F) 50 1.5 150 2.3 25 2.7 (ITM = 230 A) 100 -40 to 125 20 1.0 40 1.5 25 - TO-220FL 1300 Bypass DP S6A35 80 - 900 500 -40 to 125 1.0 8.0 10 25 1.7 9 - 13-7F2A Notes 1: The following products are also suitable for use as triggers: RSF05G1-1P (P.18), USF05G49 (P.19), URSF05G49-1P (P.19) 5.4 Special-Purpose Triacs * High-Rush Current IT(RMS) (A) VDRM (V) 400 600 Maximum Ratings ITSM (A) ITRM (A) 50 Hz 60 Hz Tj (C) IDRM (mA) Electrical Characteristics (Ta = 25C) Package Package VGT (V) VTM (dv/dt)c tq (V) (ms) ITM (A) (V/ms) Dimensions Number I, II, III I, II, III IGT (mA) Package Appearance TO-220AB 20 24 S6903G S6903J 120 180 200 -40 to 125 0.02 30 1.5 1.6 30 10 5 3 13-10G1A 6 Package Dimensions Unit: mm PW-MINI TO-220NIS 4 Pin Number 13-5B1A 6.7MAX. 2 Anode 3 Cathode TO-220FL 5 3.2 0.2 10.3MAX. 1 2 3 3 1 Gate 0.5 2.54 0.25 Pin Number 1 13-10G1B Cathode 13-10G1A T1 2 Anode T2 TO-220SM 6 1.32 10.3MAX. Pin Number 1 13-16A1B Cathode 13-16A1A T1 2.3 1 2 3 2.3 5.3 0.3 1.0 2 3 3.15 +0.2 -0.1 2 Anode T2 3 Gate Gate Pin Number 13-7F1A 1 9.1 10.6MAX. 1.5 10.6MAX. 0.6 3 0.2 4.7MAX. 2.6 0.5 2.0 MAX 5.2 0.2 5.5 0.2 0.6 MAX 0.6 0.15 0.9 4.7MAX. 6.8 MAX 0.95MAX 0.6 0.15 0.6 MAX 2.3 2 Anode Cathode (heat sink) 3 Gate Gate DP (Surface-mount) 0.6 MAX 0.6 MAX 2 Anode T2 2.3 1 2 3 3 Pin Number Gate 13-7F2A 1 2.5 MAX 0.95MAX Pin Number 1 13-10J2B Cathode 13-10J2A T1 9 12.0 MIN 0.6 0.15 5.45 0.2 1 9.1 5.2 0.2 15.5 5.5 21.0 0.5 1.0 +0.25 -0.15 2.6 6.8 MAX 3.5 19.4MIN. 3.6MAX. 2.0 0.6 +0.25 -0.15 DP 8 0.1 +0.2 -0.1 2.5 3.6 0.2 3 Gate Gate 1.1 0.2 15.8 0.5 2 Anode T2 0.1 0.1 TO-3P(N)IS 7 Pin Number 1 13-10J1B Cathode 13-10J1A T1 1 2 3 2.5 MAX 3 Gate Gate 2.0 MAX 2 Anode T2 2.54 0.25 1 2 3 0.5 2.6 Pin Number 1 13-10H1B Cathode 13-10H1A T1 2.54 0.25 1.32 0.76 2.54 2.54 1.1 0.2 2.54 0.25 1 2 3 12.6MIN. 0.76 4.7MAX. 2.54 0.25 1.6MAX. 5.5 0.2 1.1 0.75 0.15 0.5 2.5MAX. 3.9 3.0 1.4MAX. 13.0MIN. 5.6MAX. 15.0 0.3 10.3MAX. 1.1 3 Gate Gate 1.5 3 Cathode Anode T2 2 2.54 0.25 2.6 1.5 0.2 2 Anode Gate Gate 0.76 1.5 0.1 1 Pin Number 1 13-5A1A Gate 13-5A1D Cathode 13-5A1E T1 1.3 0.4 +0.08 -0.05 1.5 0.1 1.32 12.6MIN. 0.4 +0.08 -0.05 4.1MAX. 1 2 3 4.2MAX. 0.8MAX. 0.45 +0.08 -0.05 1.27 0.45 1.27 12.7MIN. 0.9 2.0MAX. 0.45 0.55 0.45 0.4 0.55 2.5 0.1 4.7MAX. 1.7MAX. 3.6 0.2 10.3MAX. 1.6MAX. 15.7MAX. 4.6MAX. 3.0 5.1MAX. TO-220AB 3 2.5MAX. 2 4.7MAX. TO-92 1 2 Anode Cathode (heat sink) 3 Gate 25 7 Tape Packing 7.1 Packing of TO-92 Unit: mm Packing Quantity Tape Dimensions 9.0 MAX. 0.0 1.0 6.35 0.4 0.6 0.2 12.7 0.2 9.0 MAX. 6.35 0.4 +0.4 360 50 6.35 0.4 +0.4 2.5 -0.2 +0.4 2.5 -0.2 12.7 0.2 3 453 0.6 0.2 6.0 MAX. Box (Ammo Pack) 0.0 1.0 2503 3000 pcs/box 18.0 +1.0 -0.5 2.5 MIN. TPER2 16.0 0.5 20.0 MAX. 9.0 MAX. 6.0 MAX. 12.7 1.0 0.0 1.0 4.0 0.2 0.6 0.2 12.7 0.2 TYP 2 4.0 0.2 +0.4 2.5 -0.2 0.45 33 3000 pcs/box 6.0 0.3 0.0 0.5 9.0 0.5 +0.4 2.5 -0.2 2503 18.0 +1.0 -0.5 6.0 0.3 0.0 0.5 9.0 0.5 6.35 0.4 Box (Ammo Pack) 0.0 1.0 9.0 MAX. 2.5 MIN. TYP 16.0 0.5 20.0 MAX. 32.25 MAX. TPE2 32.25 MAX. 2000 pcs/reel 6.0 MAX. 6.0 MAX. 12.7 1.0 0.0 1.0 26 30 0.6 0.2 12.7 0.2 0.45 Reel 4.0 0.2 +0.4 2.5 -0.2 2.5 -0.2 6.0 MAX. 0.0 1.0 6.0 0.3 0.0 0.5 9.0 0.5 2.5 MIN. TYP 16.0 0.5 20.0 MAX. 32.25 MAX. 6.0 MAX. 12.7 1.0 0.0 1.0 TPER1 50 4.0 0.2 +0.4 2.5 -0.2 0.45 2000 pcs/reel 18.0 +1.0 -0.5 +0.4 2.5 -0.2 30 18.0 +1.0 -0.5 6.0 0.3 0.0 0.5 9.0 0.5 2.5 MIN. TPE1 TYP 360 16.0 0.5 20.0 MAX. 32.25 MAX. 0.45 Reel 6.0 MAX. 6.0 MAX. 12.7 1.0 0.0 1.0 Packing Method 33 2 3 453 Type No. 7.2 Packing of PW-MINI and DP Unit: mm Type No. Packing Quantity Tape Dimensions PW-MINI Reel A 4.00.1 2.0 2.0 TE12R or TE12L 1000 pcs/reel (5 reels/box) 5.650.05 0.5 9.5 4.50.2 4.70.2 5.10.2 4.90.2 4.85 12.00.3 0.30.05 +0.1 -0 B o1.5 TE12R1 or TE12L1 L (note) R (note) 0.9 1.650.1 2.3 1.80.1 5000 pcs/reel (1 reel/box) B 13.5 TE12R1 or TE12L1 330 12.5 Reel 4.00.1 +0.1 +0.1 o1.5 -0 o1.5 -0 330 0.30.05 17.5 2.00.1 2000 pcs/reel (1 reel/box) 6.75 10.10.2 7.50.1 1.750.1 DP 16.00.3 A 178 TE12R or TE12L Note: L = Leeds to Left R = Leeds to Right TE16R1 or TE16L1 Packing Method 6.80.1 2.80.1 8.00.1 Note: L = Leeds to Left R = Leeds to Right 7.3 Packing of TO-220SM Unit: mm Type No. Packing Quantity Tape Dimensions Packing Method 11.50.1 o2.00.1 330 +2 -0 4.00.05 10.80.1 13.00.1 21.5 130.5 24.4+2 -0 o1.5 +0.1 -0 24.00.3 10.75 TE24R or TE24L 24.00.3 1.750.1 Reel 4.00.1 1000 pcs/reel (4 reels/box) 5.20.1 12.00.1 L(note) R(note) Note: L = Leeds to Left R = Leeds to Right 27 8 Leadforming 8.1 Leadforming of TO-92 Unit: mm LC-1 LC-3 2 o5.1MAX. 0.45 0.45 6.5MAX. 4.7MAX. o5.1MAX. 4.7MAX. 1 0.55 0.9 2.0MAX. 9.0MIN. 12.7MIN. 9.0MIN. 0.9 2.0MAX. 0.55 2.5 2.5 2.5 5 4.1MAX. 4.1MAX. 0.45 0.45 2.5 1 2 3 8.2 Leadforming of TO-220AB Unit: mm 4.7MAX. 2 3 2.50.5 2.5MAX. 4.7MAX. 2.54 1.3 1.0 0.76 14.71.0 2.5MAX. 6.7MAX. 15.7MAX. o3.60.2 0.5 2.54 2.54 5.00.5 4.7MAX. 4.7MAX. 1.32 2.6 1 2 3 0.5 5.00.5 10.3MAX. 1 2 3 1.32 2.6 2.0 4.7 2.54 21.0MIN. 3.0 o3.60.2 2.5MAX. 2.54 2.54 LB155 5 1.3 1.0 0.76 1 2 3 5.00.5 1.32 2.6 3.0 6.7MAX. 15.7MAX. 12.6MIN. 10.3MAX. 1.0 1.32 2.6 4.7MAX. 2.54 1 LB143 4 6.7MAX. 0.5 4.50.5 2.54 1 2 3 15.7MAX. 0.76 0.76 2.2 2.54 o3.60.2 5.00.5 0.5 10.3MAX. 1.3 1.3 2.54 28 3.0 3.5 1.6MAX. 4.01.0 o3.60.2 3.00.5 6.7MAX 3.0 10.3MAX. LB119 3 15.01.0 LB111 o3.60.2 2.5MAX. 6.7MAX. 12.6MIN. 15.7MAX. 3.0 10.3MAX. 2 15.7MAX. LB109 1 Note: For more detailed information about the leadforming, please contact your local Toshiba distributor. 8.3 Leadforming of TO-220NIS Unit: mm 5.2 4.7MAX. 0.750.15 4.7MAX. 5.00.5 2.6 2.540.25 2.540.25 LB184 LB185 6 o3.20.2 10.3MAX. 2.540.25 3.9 3.0 3.5 16.51.0 15.00.3 4.5 4.7MAX. 0.750.15 10.3MAX. 3.9 3.0 o3.20.2 2.5 14.70.3 3.9 3.0 17.21.0 5.2 1.1 4.7MAX. 7.5MIN. 0.750.15 30.3 4.7MAX. 4.6MIN. 5.00.5 2.6 2.6 5.00.5 2.6 2.540.25 LB188 0.750.15 4.50.5 0.750.15 4.7MAX. 0.750.15 2.540.5 9 o3.20.2 10.3MAX. 15.00.3 3.9 3.0 LB187 8 o3.20.2 2.540.5 2.70.3 10.3MAX. 2.541.0 0.750.15 LB186 5.00.75 4.0 2.541.0 2.540.5 7 3.5MIN. 7.5MIN. 2.6 2.6 2.540.5 0.750.15 0.750.15 15.00.3 5.00.5 51.0 4.7MAX. 0.750.15 1.1 2.6 4.7MAX. 0.750.15 15.00.3 0.750.15 4.10.5 4.5 1.1 14.51.0 3.9 3.0 3.5 15.00.3 3.9 3.0 o3.20.2 o3.20.2 15.00.3 10.3MAX. 10.3MAX. 16.01.0 5 2.540.25 4.50.5 LB183 5.00.5 2.6 7.5MIN. 2.541.0 4 17.21.0 2.5 4.0 0.750.15 2.540.25 o3.20.2 3.9 3.0 3.9 3.0 14.51.0 3.9 3.0 15.00.3 0.750.15 51.0 0.750.15 3.5MIN. 0.750.15 2.541.0 10.3MAX. 1.1 2.6 4.7MAX. o3.20.2 15.00.3 10.3MAX. o3.20.2 LB182 3 15.00.3 10.3MAX. LB181 2 16.01.0 LB180 1 0.750.15 2.541.0 2.541.0 2.540.5 Note 1: For more detailed information about the leadforming, please contact your local Toshiba distributor. Note 2: For more detailed information about the SM2GZ47 and SM2GZ47A, please contact your local Toshiba distributor. 2.540.5 29 9 Recommended Soldering Method 9.1 PCB Insertion Devices 9.1.1. Temperature Profile Using a Soldering Iron Complete soldering within 10 seconds for lead temperature up to 260C, or within three seconds for lead temperature up to 350C. (1) Lead temperature must be not more than 260C, and flow time must be not more than 10 seconds. +30 seconds. (2) Preheat leads at 150C 10C, for 60-0 (3) Keep the package resin surface temperature suppressed to 210C or lower. (4) The recommended thermal profile is as shown on Figure 1. (5) Notes on heating Allowing device package resin to remain at high temperatures for a long time may adversely affect reliability. Solder in as short time as possible so as not to heat the resin. 260 Temperature 9.1.2. Temperature Conditions for Flow Soldering (C) 210 150 60 seconds or more Time (in seconds) 10 seconds or less 30 seconds or less Figure 1 9.2 Surface-Mount Devices 9.2.1. Temperature Profile Using a Soldering Iron Complete soldering within 10 seconds for lead temperature up to 260C, or within three seconds for lead temperature up to 350C. Medium infrared ray heaters (reflow) Product flow 9.2.2. Using Long or Medium Infrared Ray Reflow Long infrared ray heaters (preheating) Figure 2 (C) (Max) 240 Temperature There are three different types of infrared ray reflow, classified by wavelength. Short-wave near infrared ray reflow tends to penetrate the resin and heat up the internal device as well as the surface of resin. The resulting heat stress may cause device degradation. Since long and medium infrared rays are of longer wavelength, they generally heat only the resin surface, causing little temperature fluctuation or heat stress in the internal device. Thus, the use of either long- or mediuminfrared ray reflow is recommended for solder-mounting. (1) Top and bottom heating with long or medium infrared rays is recommended. (Figure 2) (2) Complete the infrared ray reflow process within 30 seconds at a package surface temperature between 210C and 240C. (3)Refer to Figure 3 or an example of the recommended temperature profile. (4) Near infrared ray reflow soldering produces thermal stress equivalent to that of dip soldering, so take care when using this method. 210 150 60 seconds or less Time (in seconds) 30 seconds or less Figure 3 30 9.2.3. Using Hot Air Reflow (1) Complete hot air reflow within 30 seconds at a package surface temperature between 210C and 240C. 9.2.4. Using Vapor Phase Reflow (1) The recommended solvent is Fluorinate FC-70 or equivalent. (2) Complete hot air reflow within 20 seconds at an ambient atmospheric temperature of 215C, or within 60 seconds at an ambient atmospheric temperature of 200C. (3) Refer to Figure 4 for an example of a recommended temperature profile for vapor phase reflow soldering. Ambient temperature For an example of a recommended temperature profile, refer to 9.2.2. Using long or medium infrared ray reflow. (C) 215 200 30 seconds or more 150 100 60 seconds or more 60 seconds or more Time (in seconds) Figure 4 10 Gate Trigger Current Selection Table IGT Selection spec. Unit Min 10.1 IG1 IG2 IG3 IG4 IG5 IG7 A1 A3 10.2 Available Product Numbers Max -- 20 -- 100 3 40 20 200 10 50 A SF0R3G42 SF0R5J43 Series SF5J42 Series SM1G43 3 30 -- 3* mA -- 7 mA SM1J43 * Only applies to II and III quadrants Note: IGT values may differ from what is listed in the table. For further details, please refer to the technical data sheets available for each product. 11 Holding Current Selection Table IH Selection spec. HC1 Min Max -- 3 Unit Available Product Numbers mA SF0R3G42 SF0R5J43 Series (RGK = 1 k ) 31 OVERSEAS SUBSIDIARIES AND AFFILIATES Toshiba America Electronic Components, Inc. Headquarters-Irvine, CA 9775 Toledo Way, Irvine, CA 92618, U.S.A. Tel: (949)455-2000 Fax: (949)859-3963 Boulder, CO 3100 Arapahoe Avenue, Ste. 500, Boulder, CO 80303, U.S.A. Tel: (303)442-3801 Fax: (303)442-7216 Boynton Beach, FL(Orlando) 11924 W. Forest Hill Blvd., Ste. 22-337, Boynton Beach, FL 33414, U.S.A. Tel: (561)374-6193 Fax: (561)374-6194 Deerfield, IL(Chicago) One Pkwy., North, Suite 500, Deerfield, IL 60015-2547, U.S.A. Tel: (847)945-1500 Fax: (847)945-1044 Duluth, GA(Atlanta) 3700 Crestwood Parkway, Ste. 460, Duluth, GA 30096, U.S.A. Tel: (770)931-3363 Fax: (770)931-7602 Edison, NJ 2035 Lincoln Hwy. Ste. #3000, Edison NJ 08817, U.S.A. Tel: (732)248-8070 Fax: (732)248-8030 Orange County, CA 2 Venture Plaza, #500 Irvine, CA 92618, U.S.A. Tel: (949)453-0224 Fax: (949)453-0125 Portland, OR 1700 NW 167th Place, #240, Beaverton, OR 97006, U.S.A. Tel: (503)629-0818 Fax: (503)629-0827 Toshiba Electronics Europe GmbH Toshiba Electronics Asia, Ltd. Dusseldorf Head Office Hong Kong Head Office Hansaallee 181, D-40549 Dusseldorf Germany Tel: (0211)5296-0 Fax: (0211)5296-400 Munchen Office Buro Munchen Hofmannstrasse 52, D-81378, Munchen, Germany Tel: (089)748595-0 Fax: (089)748595-42 Toshiba Electronics France SARL Immeuble Robert Schumann 3 Rue de Rome, F-93561, Rosny-Sous-Bois, Cedex, France Tel: (1)48-12-48-12 Fax: (1)48-94-51-15 Toshiba Electronics Italiana S.R.L. Centro Direzionale Colleoni Palazzo Perseo Ingr. 2-Piano 6, Via Paracelso n.12, 1-20041 Agrate Brianza Milan, Italy Tel: (039)68701 Fax:(039)6870205 Toshiba Electronics Espana, S.A. Parque Empresarial San Fernando Edificio Europa, a 1 Planta, ES-28831 Madrid, Spain Tel: (91)660-6700 Fax:(91)660-6799 Toshiba Electronics(UK) Limited Riverside Way, Camberley Surrey, GU15 3YA, U.K. Tel: (01276)69-4600 Fax: (01276)69-4800 Toshiba Electronics Scandinavia AB Gustavslundsvagen 12, 2nd Floor S-161 15 Bromma, Sweden Tel: (08)704-0900 Fax: (08)80-8459 Toshiba Electronics Asia (Singapore) Pte. Ltd. Raleigh, NC Singapore Head Office 5511 Capitol Center Dr., #114, Raleigh, NC 27606, U.S.A. Tel: (919)859-2800 Fax: (919)859-2898 438B Alexandra Road, #06-08/12 Alexandra Technopark, Singapore 119968 Tel: (278)5252 Fax: (271)5155 Richardson, TX(Dallas) Bangkok Office 777 East Campbell Rd., Suite 650, Richardson, TX 75081, U.S.A. Tel: (972)480-0470 Fax: (972)235-4114 135 Moo 5 Bangkadi Industrial Park, Tivanon Rd., Bangkadi Amphur Muang Pathumthani, Bangkok, 12000, Thailand Tel: (02)501-1635 Fax: (02)501-1638 San Jose Engineering Center, CA 1060 Rincon Circle, San Jose, CA 95131, U.S.A. Tel: (408)526-2400 Fax:(408)526-2410 Toshiba Electronics Trading (Malaysia)Sdn. Bhd. Wakefield, MA(Boston) Kuala Lumpur Head Office 401 Edgewater Place, Suite #360, Wakefield, MA 01880-6229, U.S.A. Tel: (781)224-0074 Fax: (781)224-1095 Suite W1203, Wisma Consplant, No.2, Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: (3)731-6311 Fax: (3)731-6307 Penang Office Toshiba Do Brasil S.A. Electronic Components Div. Estrada Dos Alvarengas, 5. 500-Bairro Alvarenga 09850-550-Sao Bernardo do campo - SP Tel: (011)7689-7171 Fax: (011)7689-7189 010124 (D) Suite 13-1, 13th Floor, Menard Penang Garden, 42-A, Jalan Sultan Ahmad Shah, 100 50 Penang, Malaysia Tel: 4-226-8523 Fax: 4-226-8515 Toshiba Electronics Philippines, Inc. Level 11, Top Glory Insurance Building, Grand Century Place, No.193, Prince Edward Road West, Mong Kok, Kowloon, Hong Kong Tel: 2375-6111 Fax: 2375-0969 Beijing Office Rm 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu, Chao Yang District, Beijing, 100004, China Tel: (010)6590-8795 Fax: (010)6590-8791 Chengdu Office Unit F, 18th Floor, New Times Plaza, 42 Wenwu Road, Xinhua Avenue, Chengdu, 610017, China Tel: (028)675-1773 Fax: (028)675-1065 Shenzhen Office Rm 3010-3012, Office Tower Shun Hing Square, Di Wang Commercial Centre, 333 ShenNan East Road, Shenzhen, 518008, China Tel: (0755)246-1582 Fax: (0755)246-1581 Toshiba Electronics Korea Corporation Seoul Head Office 14/F, KEC B/D, 257-7 Yangjae-Dong, Seocho-ku, Seoul, Korea Tel: (02)589-4334 Fax: (02)589-4302 Gumi Office 6/F, Ssangyong Investment Securities B/D, 56 Songjung-Dong, Gumi City Kyeongbuk, Korea Tel: (82)54-456-7613 Fax: (82)54-456-7617 Toshiba Technology Development (Shanghai) Co., Ltd. 23F, Shanghai Senmao International Building, 101 Yin Cheng East Road, Pudong New Area, Shanghai, 200120, China Tel: (021)6841-0666 Fax: (021)6841-5002 Tsurong Xiamen Xiangyu Trading Co., Ltd. 8N, Xiamen SEZ Bonded Goods Market Building, Xiamen, Fujian, 361006, China Tel: (0592)562-3798 Fax: (0592)562-3799 Toshiba Electronics Taiwan Corporation Taipei Head Office 17F, Union Enterprise Plaza Bldg. 109 Min Sheng East Rd., Section 3, 0446 Taipei, Taiwan Tel: (02)514-9988 Fax: (02)514-7892 Kaohsiung Office 16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd., 80027, Kaohsiung, Taiwan Tel: (07)222-0826 Fax: (07)223-0046 26th Floor, Citibank Tower, Valero Street, Makati, Manila, Philippines Tel: (02)750-5510 Fax: (02)750-5511 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document shall be made at the customer's own risk. Website: http://www.semicon.toshiba.co.jp/indexus.htm Electronic Devices Sales & Marketing Division 1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan Tel: +81-3-3457-3405 Fax: +81-3-5444-9431 (c)2001 TOSHIBA CORPORATION Printed in Japan