IRKT250-04 - International Rectifier

Features

High voltage

Electrically isolated base plate

3000 VRMS isolating voltage

Industrial standard package

Simplified mechanical designs, rapid assembly

High surge capability

Large creepage distances

UL E78996 approved

This new IRK serie of MAGN-A-paks modules uses high

voltage power thyristor/thyristor and thyristor/diode in

seven basic configurations. The semiconductors are

electrically isolated from the metal base, allowing com-

mon heatsinks and compact assemblies to be built. They

can be interconnected to form single phase or three

phase bridges or as AC-switches when modules are

connected in anti-parallel mode.

These modules are intended for general purpose appli-

cations such as battery chargers, welders and plating

equipment and where high voltage and high current are

required (motor drives, U.P.S., etc.).

Description

IT(AV) @ 85°C 170 230 250 A

IT(RMS) 377 510 555 A

ITSM @ 50Hz 5100 7500 8500 A

@ 60Hz 5350 7850 8900 A

I2t @ 50Hz 131 280 361 KA2s

@ 60Hz 119 256 330 KA2s

I2√t 1310 2800 3610 KA2√s

VDRM / VRRM Up to1600 Up to 2000 Up to1600 V

TJ range -40 to 130 oC

Parameters IRK.170.. IRK.230.. IRK.250.. Units

Major Ratings and Characteristics

SCR / SCR and SCR / DIODE

170A

230A

250A

MAGN-A-pak Power Modules

IRK. SERIES

Bulletin I27102 rev. C 05/02

www.irf.com

http://store.iiic.cc/

IRK.170, .230, .250 Series

Bulletin I27102 rev. C 05/02

www.irf.com

Parameters IRK.170 IRK.230 IRK.250 Units Conditions

IT(AV) Maximum average on-state current 170 230 250 A 180o conduction, half sine wave

@ Case temperature 85 85 85 oC

IT(RMS) Maximum RMS on -state current 377 510 555 A as AC switch

ITSM Maximum peak, one-cycle on-state, 5100 7500 8500 A t = 10ms No voltage

non-repetitive surge current 5350 7850 8900 t = 8.3ms reapplied

4300 6300 7150 t = 10ms 100% VRRM

4500 6600 7500 t = 8.3ms reapplied Sinusoidal half wave,

I2t Maximum I2t for fusing 131 280 361 KA2s t = 10ms No voltage initial TJ = TJ max

119 256 330 t = 8.3ms reapplied

92.5 198 255 t = 10ms 100% VRRM

84.4 181 233 t = 8.3ms reapplied

I2√t Maximum I2√t for fusing 1310 2800 3610 KA2√s t = 0.1 to 10ms, no voltage reapplied

VT(TO)1Low level value of threshold voltage 0.89 1.03 0.97 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

VT(TO)2High level value of threshold voltage 1.12 1.07 1.00 (I > π x IT(AV)), TJ = TJ max.

rt1 Low level on-state slope resistance 1.34 0.77 0.60 mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

rt2 High level on-state slope resistance 0.96 0.73 0.57 (I > π x IT(AV)), TJ = TJ max.

ITM = π x IT(AV), TJ = TJ max., 180o conduction

Av. power = VT(TO) x IT(AV) + rf

x (IT(RMS))2

IH Maximum holding current 500 500 5 00 mA Anode supply=12V, initial IT=30A, TJ=25oC

IL Maximum latching current 1000 1000 1000 Anode supply=12V, resistive load=1Ω

gate pulse: 10V, 100µs, TJ = 25°C

Type number Voltage VRRMVDRM , maximum VRSM , maximum non-repetitive IRRM IDRM max

Code repetitive peak reverse and peak reverse voltage @ 130°C

off-state blocking voltage

V V m A

04 400 500 50

IRK.170- 08 800 900

IRK.250- 12 1200 1300

14 1400 1500

16 1600 1700

IRK.230- 08 800 900 50

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

td Typical delay time 1.0 µs TJ = 25oC, Gate Current=1A dIg/dt=1A/µs

tr Typical rise time 2.0 Vd = 0,67% VDRM

ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ;

Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm

Voltage Ratings

ELECTRICAL SPECIFICATIONS

On-state Conduction

Switching

tq Typical turn-off time 50 - 150 µs

VTM Maximum on-state voltage drop 1.60 1.59 1.44 V

Parameters IRK.170 IRK.230 IRK.250 Units Conditions

http://store.iiic.cc/

IRK.170, .230, .250 Series

Bulletin I27102 rev. C 05/02

www.irf.com

IRRM Max. peak reverse and off-state 50 mA TJ

=TJ max.

IDRM leakage current

VINS RMS isolation voltage 3000 V 50Hz, circuit to base, all termin. shorted, 25°C,1s

dv/dt Critical rate of rise of off-state voltage 1000 V/µs TJ = TJ max, exponential to 67% rated VDRM

TJ Junction operating temperature -40 to 130 oC

Tstg Storage temperature range -40 to 150 oC

RthJC Maximum thermal resistance

junction to case

Mounting surface flat, smooth and greased

(per module)

T Mounting tourque ±10% A mounting compound is recommended and the

MAP to heatsink 4 to 6 Nm tourque should be rechecked after a period of

Busbar to MAP 4 to 6 Nm about 3 hours to allow for the spread of the

compound

wt Approximate weight 500 g

17.8 oz

Case style MAGN-A-pak

I PGM Maximum peak gate power 10.0 W tp ≤ 5ms, TJ = TJ max.

PG(AV) Maximum average gate power 2.0 W f = 50Hz, TJ = TJ max.

+IGM Maximum peak gate current 3.0 A tp ≤ 5ms, TJ = TJ max.

-VGT Max. peak negative gate voltage 5.0 V tp ≤ 5ms, TJ = TJ max.

VGT Maximum required DC gate 4.0 V TJ = - 40oC Anode supply = 12V, resistive

voltage to trigger 3.0 V TJ = 25oC load ; Ra = 1Ω

2.0 V TJ = TJ max.

IGT Maximum required DC gate 350 mA TJ = - 40oC Anode supply = 12V, resistive

current to trigger 200 mA TJ = 25oC load ; Ra = 1Ω

100 mA TJ = TJ max.

VGDMaximum gate voltage

that will not trigger

IGDMaximum gate current

that will not trigger

di/dtMax rate of rise of

turned-on current

Blocking

Triggering

Thermal and Mechanical Specifications

0.25 V @ TJ= TJ max., rated VDRM applied

10.0 mA @ TJ= TJ max., rated VDRM applied

500 A/µs @ TJ= TJ max., ITM = 400 A rated VDRM applied

0.17 0.125 0.125 K/W Per junction, DC operation

RthC-S Thermal resistance, case to heatsink 0.02 0.02 0.02 K/W

Parameters IRK.170 IRK.230 IRK.250 Units Conditions

http://store.iiic.cc/

IRK.170, .230, .250 Series

Bulletin I27102 rev. C 05/02

www.irf.com

Thyristor Diode IT(AV) / IF(AV) @ TC

VDRM VRSM VRRM 170A 230A 250A

VRRM VRSM @ 85°C @ 85°C @ 85°C

1400 1500 2000 IRKH170-14D20 IRKH230-14D20 IRKH250-14D20

1400 1500 2000 IRKL170-14D20 IRKL230-14D20 IRKL250-14D20

1600 1700 2500 IRKH170-16D25 IRKH230-16D25 IRKH250-16D25

1600 1700 2500 IRKL170-16D25 IRKL230-16D25 IRKL250-16D25

1800 1900 2800 Not Available IRKH230-18D28 Not Available

1800 1900 2800 Not Available IRKL230-18D28 Not Available

2000 2100 3200 Not Available IRKH230-20D32 Not Available

2000 2100 3200 Not Available IRKL230-20D32 Not Available

3 x I RKL. . .

3 x I RKH. . .

3 x I RKT. . .

Current-Source Inverters (also known as Sequentially

Commutated Inverters) use Phase Control (as op-

posed to Fast) Thyristors and Diodes.

The advantages of Current Source Inverters lie in their

ease control, absence of large commutation induc-

tances and limited fault currents.

Their simple construction, illustrated by the circuit on

the left, is further enhanced by the use of MAGN-A-

paks which allow the power circuit of an Inverter to be

realised with 6 capacitors and 9 MAGN-A-paks all

mounted on just one heatsink.

The optimal design of Current Source Inverters re-

quires the use of Diodes with blocking voltages greater

than those of the thyristors .

This departure from conventional half-bridge modules

is catered for by MAGN-A-pak range with Thyristors up

to 2000V and Diodes up to 3200V.

Current Source Inverters

Current Source Inverter using 9 MAGN-A-paks

MAGN-A-paks Suitable for Current Source Inverters

Application Notes

For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.

Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.

Devices Units

180o 120o 90o 60o 30o 180o 120o 90o 60o 30o

IRK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W

IRK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033

IRK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

http://store.iiic.cc/

IRK.170, .230, .250 Series

Bulletin I27102 rev. C 05/02

www.irf.com

IRK T 250 - 14 D20

1 - Module type

2 - Circuit configuration (See Outline Table)

3 - Current rating

4 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)

5 - Current Source Inverters Types

Ordering Information Table

Device Code

1 3 4 5

IRKL... IRKU... IRKV... IRKK... IRKN...

IRKH...

IRKT...

- All dimensions in millimeters (inches)

-Dimensions are nominal

-Full engineering drawings are available

on request

- UL identification number for gate

and cathode wire: UL 1385

- UL identification number for package:

UL 94V0

Outline Table

NOTE: To order the Optional Hardware see Bulletin I27900

http://store.iiic.cc/

IRK.170, .230, .250 Series

Bulletin I27102 rev. C 05/02

www.irf.com

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 05/02

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

http://store.iiic.cc/