MRF6S27050HR3 MRF6S27050HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•Typical Single -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
500 mA, Pout = 7 Watts Avg., f = 2615 MHz, Channel Bandwidth =
3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — -42.5 dBc @ 3.84 MHz Channel Bandwidth
•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Output Power
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Internally Matched for Ease of Use
•Qualified Up to a Maximum of 32 VDD Operation
•Integrated ESD Protection
•Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (1,2) TJ225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
RθJC
0.85
0.98
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S27050H
Rev. 1, 12/2008
Freescale Semiconductor
Technical Data
2500 -2700 MHz, 7 W AVG., 28 V
SINGLE W- CDMA
LATERAL N -CHANNEL
RF POWER MOSFETs
MRF6S27050HR3
MRF6S27050HSR3
CASE 465A- 06, STYLE 1
NI-780S
MRF6S27050HSR3
CASE 465- 06, STYLE 1
NI-780
MRF6S27050HR3
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1A (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
VGS(th) 1 2 3 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test)
VGS(Q) 2 2.8 4 Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on) — 0.21 0.3 Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 0.83 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 232 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg. W - CDMA, f = 2615 MHz,
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain Gps 15 16 18 dB
Drain Efficiency ηD20.5 22.5 — %
Adjacent Channel Power Ratio ACPR -40 - 42.5 — dBc
Input Return Loss IRL — -10 — dB
1. Part internally matched both on input and output.
MRF6S27050HR3 MRF6S27050HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic
Z10 0.091″ x 0.753″ Microstrip
Z11 0.150″ x 0.753″ Microstrip
Z12 0.153″ x 0.543″ Microstrip
Z13 0.145″ x 0.384″ Microstrip
Z14 0.446″ x 0.148″ Microstrip
Z15 0.130″ x 0.425″ Microstrip
Z16 0.384″ x 0.081″ Microstrip
Z17 0.730″ x 0.081″ Microstrip
PCB Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
Z1 0.748″ x 0.081″ Microstrip
Z2 0.273″ x 0.081″ Microstrip
Z3 0.055″ x 0.220″ Microstrip
Z4 0.090″ x 0.440″ Microstrip
Z5 0.195″ x 0.170″ Microstrip
Z6 0.797″ x 0.490″ Microstrip
Z7 0.082″ x 0.490″ Microstrip
Z8 0.050″ x 0.476″ Microstrip
Z9 0.070″ x 0.350″ Microstrip
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
Z1 Z2 Z3
C1
Z4 Z5 Z6 Z7
R1
C5
C9 C14 C15
Z10 Z11 Z12 Z14 Z15
++
C7
+
C6
+
Z13 Z16
C2
Z17
C8
B2
Z8
C3
B1
C4 Z9
C10
+
C11 C12 C13
+
Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead 2508051107Y0 Fair-Rite
B2 Ferrite Bead, Short 2743019447 Fair-Rite
C1, C2 4.3 pF Chip Capacitors ATC100B4R3BT500XT ATC
C3, C8 3.6 pF Chip Capacitors ATC100B3R6BT500XT ATC
C4, C11 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC Kemet
C5 0.01 µF, 100 V Chip Capacitor C1825C103J1RAC Kemet
C6 22 µF, 25 V Tantulum Capacitor T491D226K025AT Kemet
C7 47 µF, 16 V Tantalum Capacitor T491D476K016AT Kemet
C9, C10 10 µF, 50 V Tantalum Capacitors T491D106K050AT Kemet
C12, C13 1.0 µF, 50 V Chip Capacitors GRM32RR71H105KA01B Murata
C14 330 µF, 63 V Electrolytic Capacitor EMVY630GTR331MMH0S Nippon Chemi-Con
C15 47 µF, 50 V Electrolytic Capacitor EMVK500ADA470MHA0G United Chemi-Con
R1 2.7 Ω, 1/4 W Chip Resistor CRCW12062R7FKEA Vishay
4
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
Figure 2. MRF6S27050HR3(SR3) Test Circuit Component Layout
CUT OUT AREA
MRF6S27050
Rev. 1A
B2
C7 C6
B1
R1
C4 Top
C5 Bottom
C1
C3
C8
C11
C14
C15
C13
C12
C10C9
C2
MRF6S27050HR3 MRF6S27050HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
−25
−5
−10
−15
−20
27002500
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W- CDMA Broadband Performance
@ Pout = 7 Watts Avg.
VDD = 28 Vdc, Pout = 7 W (Avg.), IDQ = 500 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
2640262026002580256025402520
11
19
18
17
16
15
14
13
12
−70
24
23
22
21
20
−40
−50
−60
ηD, DRAIN
EFFICIENCY (%)
ηD
26802660
ALT1
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
−25
−5
−10
−15
−20
27002500
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W- CDMA Broadband Performance
@ Pout = 14 Watts Avg.
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQ = 500 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
2640262026002580256025402520
11
19
18
17
16
15
14
13
12
−60
34
33
32
31
30
−30
−40
−50
ηD, DRAIN
EFFICIENCY (%)
ηD
26802660
ALT1
Figure 5. Two- Tone Power Gain versus
Output Power
12
20
1
IDQ = 1000 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
125 mA
18
17
16
10 100
Gps, POWER GAIN (dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−45
−15
0.5
IDQ = 125 mA
Pout, OUTPUT POWER (WATTS) PEP
10
−20
−25
−30
−35
−40
100
−55
−50
VDD = 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
750 mA
500 mA
250 mA
19
15
14
13
750 mA
500 mA
250 mA
1000 mA
6
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
TYPICAL CHARACTERISTICS
10
−55
−5
0.1
VDD = 28 Vdc, Pout = 50 W (PEP), IDQ = 500 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
IM3−U
−10
−15
−40
−45
−50
1 100
IMD, INTERMODULATION DISTORTION (dBc)
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
−70
−10
1 100
−40
−50
10
−30
−20
−60
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO−TONE SPACING (MHz)
Figure 9. Pulsed CW Output Power versus
Input Power
Pin, INPUT POWER (dBm)
37
54
28
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 12 µsec(on), 1% Duty Cycle
f = 2600 MHz
52
50
48
46
44
29 3130 3332 3634
Actual
Ideal
53
51
47
49
45
3527
Pout, OUTPUT POWER (dBm)
P6dB = 47.88 dBm (61.38 W)
ACPR (dBc), ALT1 (dBc)
Figure 10. Single-Carrier W- CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
0 −65
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
50 −15
25
−20
20
−35
15
−40
5
−50
0.2 10 40
−45
10
VDD = 28 Vdc, IDQ = 500 mA, f = 2600 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Gps
ηD
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dBc)
7th Order
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
5th Order
3rd Order −30
−35
−20
−25
IM3−L
IM5−U
IM5−L
IM7−L
IM7−U
P3dB = 47.44 dBm (55.46 W)
P1dB = 46.91 dBm (49.06 W)
35
30
45
40
1
−25
−30
−55
−60
ACPR
ALT1
MRF6S27050HR3 MRF6S27050HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
12
20
0.1
0
64
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 500 mA
f = 2600 MHz
TC = −30_C
25_C
85_C
−30_C25_C
85_C
101
19
18
17
16
15
14
48
40
32
24
16
8
ηD, DRAIN EFFICIENCY (%)
ηD
Gps
Gps, POWER GAIN (dB)
13
56
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps, POWER GAIN (dB)
70
14
17
0.3 20
15
40 60
16
VDD = 24 V 28 V 32 V
IDQ = 500 mA
f = 2600 MHz
503010
EVM, ERROR VECTOR MAGNITUDE (%)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
10 1
Pout, OUTPUT POWER (dBm)
35 6
25
20
5
15
4
34 41 42
3
VDD = 28 Vdc, IDQ = 500 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
ηD
ηD, DRAIN EFFICIENCY (%)
30
2
EVM
Figure 14. MTTF Factor versus Junction Temperature
35 36 37 38 39 40 250
109
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 7 W Avg., and ηD = 22.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
106
110 130 150 170 190
MTTF (HOURS)
210 230
107
8
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
W- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 15. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single- Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset
PAR = 8.5 dB @ 0.01% Probability on CCDF
−60
−110
−10
(dB)
−20
−30
−40
−50
−70
−80
−90
−100
3.84 MHz
Channel BW
7.21.8 5.43.60−1.8−3.6−5.4−9 9
f, FREQUENCY (MHz)
Figure 16. Single-Carrier W- CDMA Spectrum
−7.2
−ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
MRF6S27050HR3 MRF6S27050HSR3
9
RF Device Data
Freescale Semiconductor
Zsource
f = 2500 MHz
f = 2700 MHz
f = 2700 MHz
f = 2500 MHz
Zload
Zo = 25 Ω
VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg.
f
MHz
Zsource
W
Zload
W
2500 6.897 + j6.212 11.524 - j6.193
2525 7.062 + j6.412 11.325 - j6.396
2550 7.239 + j6.611 11.110 - j6.594
2575 7.428 + j6.808 10.880 - j6.783
2600 7.630 + j7.002 10.634 - j6.962
2625 7.846 + j7.193 10.373 - j7.130
2650 8.075 + j7.380 10.098 - j7.283
2675 8.320 + j7.561 9.810 - j7.420
2700 8.579 + j7.737 9.511 - j7.541
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 17. Series Equivalent Source and Load Impedance
10
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
PACKAGE DIMENSIONS
CASE 465-06
ISSUE G
NI- 780
MRF6S27050HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
CASE 465A-06
ISSUE H
NI- 780S
MRF6S27050HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U−−− 0.040 −−− 1.02
Z−−− 0.030 −−− 0.76
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
MRF6S27050HR3 MRF6S27050HSR3
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2006 •Initial Release of Data Sheet
1Dec. 2008 •Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
•Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
•Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
•Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
•Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
•Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
12
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
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Document Number: MRF6S27050H
Rev. 1, 12/2008
