Vishay Siliconix
Si7619DN
New Product
Document Number: 65533
S09-2269-Rev. A, 02-Nov-09
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
•100 % R
g Tested
•100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- Load Switch
- Battery Switch
- Adaptor Switch
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 81 °C/W.
d. Based on TC = 25 °C.
e. Package Limited.
f. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)dQg (Typ.)
- 30 0.021 at VGS = - 10 V - 24e
15 nC
0.034 at VGS = - 4.5 V - 18.7
Ordering Information: Si7619DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm 3.30 mm
PowerPAK® 1212-8
Bottom View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 24e
A
TC = 70 °C - 23.8
TA = 25 °C - 10.5a, b
TA = 70 °C - 8.3a, b
Pulsed Drain Current IDM - 50
Continuous Source-Drain Diode Current TC = 25 °C IS
- 23.2
TA = 25 °C - 2.9a, b
Avalanche Current L = 0.1 mH IAS - 20
Single-Pulse Avalanche Energy EAS 20 mJ
Maximum Power Dissipation
TC = 25 °C
PD
27.8
W
TC = 70 °C 17.8
TA = 25 °C 3.5a, b
TA = 70 °C 2.2a, b
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)f, g 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 29 36 °C/W
Maximum Junction-to-Case Steady State RthJC 3.6 4.5
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Document Number: 65533
S09-2269-Rev. A, 02-Nov-09
Vishay Siliconix
Si7619DN
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V
VDS Temperature Coefficient ΔVDS/TJID = - 250 µA - 31 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ4.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 30 V, VGS = 0 V - 1 µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5
On-State Drain CurrentaID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 10.5 A 0.0175 0.021 Ω
VGS = - 4.5 V, ID = - 8.3 A 0.0283 0.034
Forward Transconductanceagfs VDS = - 10 V, ID = - 10.5 A 23 S
Dynamicb
Input Capacitance Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
1350
pFOutput Capacitance Coss 215
Reverse Transfer Capacitance Crss 185
Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 10.5 A 32 50
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 10.5 A
15 25
Gate-Source Charge Qgs 4
Gate-Drain Charge Qgd 7.5
Gate Resistance Rgf = 1 MHz 1.2 5.8 11.6 Ω
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 1.8 Ω
ID ≅ - 8.4 A, VGEN = - 10 V, Rg = 1 Ω
10 15
ns
Rise Time tr815
Turn-Off DelayTime td(off) 45 70
Fall Time tf12 25
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 1.8 Ω
ID ≅ - 8.4 A, VGEN = - 4.5 V, Rg = 1 Ω
42 70
Rise Time tr35 60
Turn-Off DelayTime td(off) 40 70
Fall Time tf16 30
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current ISTC = 25 °C - 23.2 A
Pulse Diode Forward Current ISM - 50
Body Diode Voltage VSD IS = - 8.4 A, VGS = 0 V - 0.85 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 8.4 A, dI/dt = 100 A/µs, TJ = 25 °C
34 60 ns
Body Diode Reverse Recovery Charge Qrr 22 40 nC
Reverse Recovery Fall Time ta11 ns
Reverse Recovery Rise Time tb23
Document Number: 65533
S09-2269-Rev. A, 02-Nov-09
www.vishay.com
3
Vishay Siliconix
Si7619DN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
VGS =10Vthru5V
VGS =3V
VGS =4V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
0.000
0.015
0.030
0.045
0.060
0 1020304050
VGS =10V
VGS =4.5V
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
0
2
4
6
8
10
091827 36
V
DS
=22.5V
I
D
=9.1A
V
DS
=15V
V
DS
=7.5V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
1.5
3.0
4.5
6.0
01234
TC= 25 °C
TC= 125 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I D
0
600
1200
1800
2400
0 6 12 1824 30
Ciss
Coss
Crss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
VGS =10V
VGS =4.5V
ID=9.1A
TJ-Junction Temperature (°C)
(Normalized)
- On-ResistanceRDS(on)
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Document Number: 65533
S09-2269-Rev. A, 02-Nov-09
Vishay Siliconix
Si7619DN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
TJ= 25 °C
TJ= 150 °C
VSD -Source-to-Drain Voltage (V)
- Source Current (A)I S
- 2.0
- 1.8
- 1.6
- 1.4
- 1.2
- 1.0
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
(V)VGS(th)
TJ- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0246810
TJ= 25 °C
TJ= 125 °C
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
0
24
48
72
96
120
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
0.1 TA= 25 °C
Single Pulse
100 ms
Limited byR
DS(on)*
BVDSS Limited
1ms
100 µs
10 ms
1s
10 s
DC
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
- Drain Current (A)
ID
Vishay Siliconix
Si7619DN
Document Number: 65533
S09-2269-Rev. A, 02-Nov-09
www.vishay.com
5
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
7
14
21
28
35
0 25 50 75 100 125 150
Package Limited
TC- Case Temperature (°C)
ID- Drain Current (A)
Power, Junction-to-Case
0
7
14
21
28
35
0 25 50 75 100 125 150
TC- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
0 25 50 75 100 125 150
TA-Ambient Temperature (°C)
Power (W)
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Document Number: 65533
S09-2269-Rev. A, 02-Nov-09
Vishay Siliconix
Si7619DN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65533.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =81 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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