RoHS
Compliant
High Dynamic Range Low Noise Amplifier
800 - 1000 MHz
MAALSS0043
V2
1
M/A-C OM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liabili
ty
whatsoever arising out of the use or application of any product(s) or
information.
• North
America
Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Features
•
Low Noise Figure: 1.2 dB
•
High Input IP3: +18 dBm at 8 V, 60 mA bias
+6.5 dBm at 3 V, 20 mA bias
•
High Gain: 16 dB
•
Single Supply: +3 to +8 VDC
•
Adjustable current: 20 to 80 mA with external
resistor
•
Lead-Free SOIC-8 Pack age
•
100% Matte Tin Plating over Copper
•
Halogen-Free “Green” Mold Compound
•
260°C Reflow Compatible
Functional
Block
Diagram
GND
REXT
RF IN
GND
VDD
RF OUT
•
RoHS* Compliant Version of AM50-0003
Description
M/A-COM’s MAALSS0043 is a high dynamic
range, GaAs MMIC, low noise amplifier in a
lead-free SOIC-8, surface mount plastic package.
It employs external input matching to obtain
optimum noise figure performance and operating
frequency flexibility.
The MAALSS0043 also features flexible biasing to
control the current consumption vs. dynamic range
trade-off. The MAALSS0043 can operat e from any
supply voltage in the 3 V to 8 V range. Its current
can be controlled over a range of 20 mA to 80 mA
with an externa l resistor.
The MAALSS0043 is ideally suited for use where
low noise figure, high gain, high dynamic range,
and low power consumption are required. Typical
applications include receiver front ends in AMPS,
GSM, and ETACS base stations. It is also useful
as a gain block, buffer, driver, and IF amplifier in
both fixed and portable cellular and 900 MHz ISM
systems.
The MAALSS0043 is fabricated using a low-cost
0.5-micron gate length G aAs process. The
process features full passivation for increased
performance reliability.
GND GND
Pin
Configuration
Pin
N
o
.
Pin
Na
me
Descri
p
ti
on
1
GND RF and DC Ground
2
R
EXT External Current Control (optional)
3
RF IN RF Input of the amplifier
4
GND RF and DC Ground
5
GND RF and DC Ground
6
RF OUT RF Output of the amplifier
7
V
DD Positive supply voltage
8
GND RF and DC Ground
Ordering
Information
1
Part
Number
Package
MAALSS0043 Bulk Packaging
MAALSS0043TR-3000 3000 piece reel
MAALSS0043SMB Sample Test Board
1. Reference Application Note M513 for reel size information.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
RoHS
Compliant
High Dynamic Range Low Noise Amplifier
800 - 1000 MHz
MAALSS0043
V2
2
M/A-C OM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liabili
ty
whatsoever arising out of the use or application of any product(s) or
information.
• North
America
Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Parameter
Absolute
Max
i
mum
V
DD +10
VDC
Input Power +17
dBm
Current
5 120
mA
Channel Temperature6
+150°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Electrical Specifications:
TA = +25°C, F = 900 MHz, PIN= -30 dBm, Z0 = 50
Ω
Parameter
Test
Co
ndit
i
on
s
Units
Min
.
Typ.
Max
.
Gain
5 V, 60 mA 2
dB
15
16
17
3 V, 20
mA
dB
—
13.5
—
Noise Figure 5 V, 60 mA 2
dB
—
1.20 1.50
3 V, 20
mA
dB
—
1.25 1.50
Input VSWR
—
Ratio
—
2.0:1
—
Output VSWR
—
Ratio
—
1.5:1
—
Output 1 dB Compression 5 V, 60 mA 2
dBm
—
16.5
—
3 V, 20
mA
dBm
—
8.5
—
Input
IP3
5 V, 60 mA 2
dBm
12.5
15
—
3 V, 20
mA
dBm
—
6.5
—
Reverse Isolation
—
dB
—
25
—
2. Using external 15 Ω resistor. See functional block diagram.
Absolute
Maximum Ratings
3,4
Handling
Procedures
Please observe the following precautions to avoid
damage:
Static
Sensitivity
Gallium Arsenide Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged by
static electricity. Proper ESD control techniques
should be used when handling these devices.
3. Exceeding any one or combination of these limits may
cause permanent damage to this device.
4. M/A-COM does not recommend sustained operation near
these survivability limits.
5. When pin #2 is used to increase current (see note 8).
6. Thermal resistance (θjc) = +88°C/W.
RoHS
Compliant
High Dynamic Range Low Noise Amplifier
800 - 1000 MHz
MAALSS0043
V2
Typical
Performance Curves
Test
Conditions:
TA = +25°C, Z0 = 50 Ω, VDD = 5 V, IDD = 60 mA unless
otherwise specified.
3
M/A-C OM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liabili
ty
whatsoever arising out of the use or application of any product(s) or
information.
• North
America
Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V = 3 V to 8
V
DD
Gain vs.
F
r
equ
e
n
cy
17
VSWR vs.
F
r
eq
u
e
n
cy
5
3
V
16 8 V
4
15
3
14
2
13
INPUT
OUTPUT
12
0.5 0.7 0.9
1.1
Frequency (GHz)
Noise Figure vs. Fre
que
ncy
1.4
1
0.5 0.7 0.9
1.1
Frequency (GHz)
Noise Figure vs. Current, F = 900 MHz
1.4
1.3
1.2
1.1
V = 3 V to 8
V
DD
1.3
1.2
1.1
1.0
1.0
20 40 60
80
0.80 0.85 0.90 0.95
1.00
Frequency (GHz) I (mA)
DD
Output P1dB vs. Fre
que
ncy
24
Output P1dB vs. Current, F = 900 MHz
24
20
16
3
V
5
V
12 6
V
8
V
3
V
5
V
20 6
V
8
V
16
12
8
0.80 0.85 0.90 0.95
1.00
8
20 40 60
80
RoHS
Compliant
High Dynamic Range Low Noise Amplifier
800 - 1000 MHz
MAALSS0043
V2
Typical
Performance Curves
Test
Conditions:
TA = +25°C, Z0 = 50 Ω, VDD = 5 V, IDD = 60 mA unless
otherwise specified.
4
M/A-C OM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liabili
ty
whatsoever arising out of the use or application of any product(s) or
information.
• North
America
Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Frequency (GHz) I (mA)
DD
RoHS
Compliant
High Dynamic Range Low Noise Amplifier
800 - 1000 MHz
MAALSS0043
V2
Typical
Performance Curves
Test
Conditions:
TA = +25°C, Z0 = 50 Ω, VDD = 5 V, IDD = 60 mA unless
otherwise specified.
5
M/A-C OM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liabili
ty
whatsoever arising out of the use or application of any product(s) or
information.
• North
America
Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Input IP3 vs.
Freq
u
e
n
cy
Input IP3 vs. Current, F = 900 MHz
21
21
3
V
5
V
6
V
8
V
17
17
13
13
3
V
5
V
6
V
8
V
9
9
5
0.80 0.85 0.90 0.95
1.00
5
20 40 60
80
Frequency (GHz) I (mA)
DD
Lead-Free SOIC-8†
† Reference Application Note M538 for lead-free solder reflow recommendations.
RoHS
Compliant
High Dynamic Range Low Noise Amplifier
800 - 1000 MHz
MAALSS0043
V2
5
M/A-C OM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liabili
ty
whatsoever arising out of the use or application of any product(s) or
information.
• North
America
Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Recommended
PCB
Configuration
Cross Section
Vie
w
The PCB dielectric between RF traces and RF ground layers
should be chosen to reduce RF discontinuities between 50 Ω
lines and package pins. M/A-COM recommends an FR-4
dielectric thickness of 0.008” (0.20 mm) yielding a 50 Ω line
width of 0.015” (0.38 mm). The recommended RF m etalization
is 1 ounce copper.
Functional
Schematic External
Component
List
7
Part
Value
Case
Size
Man
u
f
acturer
Purpo
se
C1 47 pF 0603 Murata DC Block
C2 470 pF 0603 Murata By-Pass
L1
12 nH 0603 Coilcraft Tuning
L2
12 nH 0603 Coilcraft RF Choke
R1 5.1 K Ω 0603 Panasonic DC Return
R2 See
Note 8 0603 Panasonic Optional current
control
7. All external components are readily available, low cost
surface mount components.
8. Pin 2 allows use of an external resistor to ground for
optional, higher current. For 20 mA operation, no resistor
is
used.
For IDD ~ 40 mA, R2 = 43 ohms;
IDD ~ 60 mA, R2 = 15 ohms;
IDD ~ 80 mA, R2 = 10 ohms.
