1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 20 Vdc
CollectorBase Voltage VCBO 30 Vdc
EmitterBase Voltage VEBO 3.0 Vdc
Collector Current — Continuous IC100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 Vdc
CollectorBase Breakdown Voltage (IC = 10
m
Adc, IE = 0) V(BR)CBO 30 Vdc
EmitterBase Breakdown Voltage (IE = 10
m
Adc, IC = 0) V(BR)EBO 3.0 Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
hFE 35
40
CollectorEmitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) 1.0 Vdc
BaseEmitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) 1.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT700
600
MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, Pf = 0, f = 10 MHz) Cre 0.65 pF
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 , f = 200 MHz) Nf 3.0 dB
Order this document
by BF959/D
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SEMICONDUCTOR TECHNICAL DATA

CASE 29–04, STYLE 21
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
BF959
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. hFE at 10 V
IC, COLLECTOR CURRENT (mA)
30
50
200
500
1000
10 1
Figure 2. VCE(sat) at IC/IB = 10
IC, COLLECTOR CURRENT (mA)
10 20 30 502 3 4 5
hFE, DC CURRENT GAIN
100
40
20
100
30
50
200
500
10 1 10 20 30 502 3 4 5
100
40
20
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.8
1.2
1.6
1.8
2.0
0.4 1
Figure 4. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10 20 30 502 3 4 5
1.4
1
0.6
100 1 10 20 30 502 3 4 5 100
f, CURRENT–GAIN — BANDWIDTH PRODUCT (GHz)
T
C, CAPACITANCE (pF)
0.8
1.2
1.6
1.8
0.4
1.4
1
0.6
0.2
Figure 5. Input Impedance at 30 MHz
IC, COLLECTOR CURRENT (mA)
0.3
0.5
2
5
10
0.1 1
Figure 6. Output Impedance at 30 MHz
IC, COLLECTOR CURRENT (mA)
10 20 30 502 3 4 5
1
0.4
0.2
100 1 10 20 30 502 3 4 5
Y11e (ms)
40
100
300
500
20
200
50
30
10
Y22e ( s)
µ
3
4
mV
5 V
10 V
2 V
Cob
Cib
Cre
VCE = 10 V
g11e
b11e
VCE = 10 V
b22e
g22e
40
BF959
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
BF959
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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