1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 30 Vdc
Emitter–Base Voltage VEBO 3.0 Vdc
Collector Current — Continuous IC100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc
Collector–Base Breakdown Voltage (IC = 10
m
Adc, IE = 0) V(BR)CBO 30 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10
m
Adc, IC = 0) V(BR)EBO 3.0 — — Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO — — 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
hFE 35
40 —
——
—
—
Collector–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) — — 1.0 Vdc
Base–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) — — 1.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT700
600 —
——
—
MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, Pf = 0, f = 10 MHz) Cre — 0.65 — pF
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz) Nf— 3.0 — dB