Order this document by BF959/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 20 Vdc Collector - Base Voltage VCBO 30 Vdc Emitter - Base Voltage VEBO 3.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 21 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector - Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 -- -- Vdc Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 30 -- -- Vdc Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 -- -- Vdc ICBO -- -- 100 nAdc 35 40 -- -- -- -- Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) hFE -- Collector - Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) -- -- 1.0 Vdc Base - Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) -- -- 1.0 Vdc 700 600 -- -- -- -- Cre -- 0.65 -- pF Nf -- 3.0 -- dB SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 , f = 200 MHz) Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 fT MHz 1 BF959 500 1000 200 200 100 mV hFE , DC CURRENT GAIN 500 100 50 40 30 50 40 30 20 20 1 2 3 4 5 10 20 30 50 10 100 2 3 4 5 10 20 IC, COLLECTOR CURRENT (mA) Figure 1. hFE at 10 V Figure 2. VCE(sat) at IC/IB = 10 2.0 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1 0.8 2V 0.6 0.4 1 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (GHz) 10 10 V 5V 30 50 50 100 1.2 Cib 1 0.8 Cob 0.6 Cre 0.4 0.2 1 2 3 4 5 10 20 30 40 50 100 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current-Gain -- Bandwidth Product Figure 4. Capacitances 10 500 b22e 300 g11e 5 4 3 200 g22e VCE = 10 V VCE = 10 V Y22e ( s) Y11e (ms) 2 b11e 1 0.5 0.4 0.3 2 50 40 30 20 0.2 0.1 100 10 1 2 3 4 5 10 20 30 50 100 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Input Impedance at 30 MHz Figure 6. Output Impedance at 30 MHz 50 Motorola Small-Signal Transistors, FETs and Diodes Device Data BF959 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE 3 BF959 Motorola reserves the right to make changes without further notice to any products herein. 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