1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
High-Speed Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR100 Vdc
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient RθJA 635 °C/W
Junction and Storage Temperature TJ, Tstg 150 °C
**FR-4 Minimum Pad
DEVICE MARKING
MMDL914T1 = 5D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100
m
Adc) V(BR) 100 — Vdc
Reverse V oltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR—
—25
5.0 nAdc
m
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz) CT— 4.0 pF
Forward Voltage
(IF = 10 mAdc) VF— 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1) trr — 4.0 ns
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDL914T1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMDL914T1
Motorola Preferred Device
CASE 477–02, STYLE 1
SOD323
1
2
Motorola, Inc. 1999
2
ANODE
1
CATHODE
MMDL914T1
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 Ω
0.1 µF
DUT
VR
100 µH0.1 µF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
VR, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
TA = 85°CTA = –40°C
TA = 25°C
, REVERSE CURRENT ( A)
R
m
, DIODE CAPACITANCE (pF)
D
TA = 25°C
TA = 55°C
TA = 85°C
TA = 150°C
TA = 125°C
MMDL914T1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 477–02
ISSUE A
SOD323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.60 1.80 0.063 0.071
B1.15 1.35 0.045 0.053
C0.80 1.00 0.031 0.039
D0.25 0.40 0.010 0.016
E0.15 REF 0.006 REF
H0.00 0.10 0.000 0.004
J0.089 0.177 0.0035 0.0070
K2.30 2.70 0.091 0.106
NOTE 3
A
K
12
DB
E
H
C
J
STYLE 1:
PIN 1. CATHODE
2. ANODE
0.63 mm
0.025
ȀȀ
1.60 mm
0.063
ȀȀ
2.85 mm
0.112
ȀȀ
0.83 mm
0.033
ȀȀ
ǒ
mm
inches
Ǔ
SOD–323
Soldering Footprint
MMDL914T1
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MMDL914T1/D
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