RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.280 2LFL (SO68)
epoxy sealed
.1025 - 1150 MHz
.RUGGEDIZED VSWR ∞:1
.INTERNAL INPUT MATCHING
.LOW THERMAL RESISTANCE
.POUT =4.0 W MIN. WITH 9.0 dB GAIN
DESCRIPTION
The MSC1004M is a low-level Class C pulsed
transistor specifically designed for DME/IFF driver
or output applications.
These devices are capable of withstanding a ∞:1
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and auto-
matic bonding techniques ensure high reliability
and product consistency.
The MSC1004M is housed in the IMPACpack-
age with internal input matching.
PIN CONNECTION
BRANDING
1004M
ORDER CODE
MSC1004M
ABSOLUTE MAXIMUM RATINGS (Tcase =25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC≤100°C) 18 W
ICDevice Current* 650 mA
VCC Collector-Supply Voltage* 32 V
TJJunction Temperature 200 °C
TSTG Storage Temperature −65 to +150 °C
RTH(j-c) Junction-Case Thermal Resistance* 5 °C/W
*Appliesonly to ratedRF amplifieroperation
MSC1004M
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
June 12, 1995 1/3
ELECTRICAL SPECIFICATIONS (Tcase =25°C)
Symbol Test Conditions Value Unit
Min. Typ. Max.
POUT f=1025 −1150 MHz PIN =500 mW VCC =28 V 4.0 —W
η
cf=1025 −1150 MHz PIN =500 mW VCC =28 V 35 —%
G
Pf=1025 −1150 MHz PIN =500 mW VCC =28 V 9.0 —dB
Note: Pulse Width =10µSec
Duty Cycle =1%
STATIC
Symbol Test Conditions Value Unit
Min. Typ. Max.
BVCBO IC=1mA I
E=0mA 45 — — V
BVCER IC=5mA R
BE =10 Ω45 — — V
BVEBO IE=1mA I
C=0mA 3.5 — — V
ICES VCE =28 V — 1.0 mA
hFE VCE =5V I
C=200 mA 30 — 300 —
DYNAMIC
TEST CIRCUIT
All dimensions are in inches.
Ref.: Dwg. No. C127299
MSC1004M
June 12, 1995 2/3
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0218 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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MSC1004M
June 12, 1995 3/3
