Three Phase Rectifier Bridges PSD 192 IdAVM = 248 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 192/08 PSD 192/12 PSD 192/14 PSD 192/16 PSD 192/18 Symbol Test Conditions IdAVM IFSM T C = 100C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 248 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 3300 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2500 2750 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 39200 45000 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 31200 31200 A2 s A2 s -40 ... + 150 150 -40 ... + 125 C C C 2500 3000 V V 5 5 270 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque Terminal connection torque typ. (M6) (M6) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM 0.3 5 VF VTO rT RthJC IF = 150 A T VJ = 25C 1.43 V 0.8 2.2 V m per Diode; DC current per module 0.45 0.075 K/W K/W RthJK per Diode; DC current per module 0.6 0.1 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10 9.4 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 Characteristic Value mA mA POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSD 192 300 IF(OV) -----IFSM IFSM (A) TVJ=45C TVJ=150C [A] 250 1.6 200 5 10 2 As 2800 2500 TVJ=45C 1.4 TVJ=150C 4 10 1.2 150 Tvj = 150C 1 100 0 VRRM 0.8 1/2 VRRM 50 I 0 0.5 1 1.5 VF 1 VRRM 0.6 Tvj = 25C F 3 10 1 0.4 2 0 1 10 [V] Fig. 1 Forward current versus voltage drop per diode 10 2 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 700 [W] PSD 192 2 3 t[ms] 10 4 t [ms] 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 75 TC 0.07 0.03 600 80 = RTHCA [K/W] 85 0.11 250 DC [A] sin.180 90 95 500 rec.120 200 rec.60 100 0.18 105 400 rec.30 150 110 115 300 0.32 100 120 130 0.75 135 125 175 140 145 0 C 225 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 1 K/W Z thJK Z thJC 0.5 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated 50 IdAV 150 25 75 IFAVM 100 125 DC sin.180 rec.120 rec.60 rec.30 200 PVTOT 0 6 50 100 150 200 T (C) C Fig.5 Maximum forward current at case temperature