Publication Date : January 2021
1
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
OUTLINE
MAIN FEATURES AND RATINGS
● 3 phase DC/AC inverter
● 1200V / 25A
● Built-in LPT-CSTBT (5th generation IGBT)
● Insulated transfer molding package
● N-side IGBT open emitter
APPLICATION
● AC 400V class motor control
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
● For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
● For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC)
● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
● Temperature output : Outputting LVIC temperature by analog signal
● Input interface : 5V line, Schmitt trigger receiver circuit (High Active)
● UL Recognized : UL1557 File E80276
INTERNAL CIRCUIT
Ho
HVIC3
Ho
HVIC2
Ho
HVIC1
LVIC
UOUT
VOUT
WOUT
IGBT1 Di1
IGBT2 Di2
IGBT3 Di3
IGBT4 Di4
IGBT5 Di5
IGBT6 Di6
NU
W
V
U
P
NV
NW
Fo
WN
VN
UN
WP
VP
U
VNC
VN1
VP1
VP1
VP1
VWFS
VVFS
VUFS
VWFB
VVFB
VUFB
VPC
VOT
CIN Vsc CFO
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
2
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCC Supply voltage Applied between P-NU,NV,NW 900 V
VCC(surge) Supply voltage (surge) Applied between P-NU,NV,NW 1000 V
VCES Collector-emitter voltage 1200 V
±IC Each IGBT collector current TC= 25°C 25 A
±ICP Each IGBT collector current (peak) TC= 25°C, up to 1ms 50 A
PC Collector dissipation TC= 25°C, per 1 chip 113.6 W
Tj Junction temperature -20~+150 °C
CONTROL (PROTECTION) PART
Symbol Parameter Condition Ratings Unit
VD Control supply voltage Applied between VP1-VPC, VN1-VNC 20 V
VDB Control supply voltage Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS 20 V
VIN Input voltage Applied between UP, VP, WP-VPC, UN, VN, WN-VNC -0.5~VD+0.5 V
VFO Fault output supply voltage Applied between FO-VNC -0.5~VD+0.5 V
IFO Fault output current Sink current at FO terminal 1 mA
VSC Current sensing input voltage Applied between CIN-VNC -0.5~VD+0.5 V
TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
VCC(PROT) Self protection supply voltage limit
(Short circuit protection capability)
VD = 13.5~16.5V, Inverter Part
T
j
= 125°C, non-repetitive, up to 2μs 800 V
TC Module case operation temperature (Note 1) -20~+100 °C
Tstg Storage temperature -40~+125 °C
Viso Isolation voltage 60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate 2500 Vrms
Note 1: Tc measurement point is described in Fig.1.
Fig. 1: TC MEASUREMENT POINT
THERMAL RESISTANCE
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
Rth
(j
-c
)
Q Junction to case thermal
resistance (Note 2)
Inverter IGBT pa
r
t (per 1/6 module) - - 0.88 K/W
Rth
(j
-c
)
F Inverter FWDi part (per 1/6 module) - - 1.40 K/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.2K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
Measurement point for Tc
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
3
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
VCE(sat) Collector-emitter saturation
voltage VD=VDB = 15V, VIN= 5V, IC= 25A Tj= 25°C - 1.90 2.60 V
Tj= 125°C - 2.00 2.70
VEC FWDi forward voltage VIN= 0V, -IC= 25A - 2.20 2.80 V
ton
Switching times
VCC= 600V, VD= VDB= 15V
IC= 25A, Tj= 125°C, VIN= 0↔5V
Inductive Load (upper-lower arm)
0.50 1.20 1.90 μs
tC(on) - 0.60 0.90 μs
toff - 2.40 3.50 μs
tC(off) - 0.60 0.90 μs
trr - 0.50 - μs
ICES Collector-emitter cut-off
current VCE=VCES Tj= 25°C - - 1 mA
Tj= 125°C - - 10
CONTROL (PROTECTION) PART
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
ID
Circuit current
Total of VP1-VPC, VN1-VNC VD=15V, VIN=0V - - 5.60
mA
VD=15V, VIN=5V - - 5.60
IDB Each part of VUFB-VUFS,
VVFB-VVFS, VWFB-VWFS
VD=VDB=15V, VIN=0V - - 1.10
VD=VDB=15V, VIN=5V - - 1.10
ISC Short circuit trip level
-20°C≤Tj≤125°C, Rs= 82.5Ω (±1%),
Not connecting outer shunt resistors to
NU,NV,NW terminals
(Note 3) 42.5 - - A
UVDBt P-side Control supply
under-voltage
protection(UV)
Tj ≤125°C Trip level 10.0 - 12.0 V
UVDBr Reset level 10.5 - 12.5 V
UVDt N-side Control supply
under-voltage
protection(UV)
Tj ≤125°C Trip level 10.3 - 12.5 V
UVDr Reset level 10.8 - 13.0 V
VFOH Fault output voltage VSC = 0V, FO terminal pulled up to 5V by 10kΩ 4.9 - - V
VFOL V
SC = 1V, IFO = 1mA - - 0.95 V
tFO Fault output pulse width CFO=22nF (Note 4) 1.6 2.4 - ms
IIN Input current VIN = 5V 0.70 1.00 1.50 mA
Vth(on) ON threshold voltage Applied between UP, VP, WP, UN, VN, WN-VNC - - 3.5
V
Vth(off) OFF threshold voltage 0.8 - -
VOT Temperature output LVIC temperature = 85C (Note 5) 3.57 3.63 3.69 V
Note 3: Short circuit protection detects sense current divided from main current at N-side IGBT and works for N-side IGBT only. In the case that outer shunt resistor is
inserted into main current path, protection current level ISC changes. For details, please refer the application note for this DIPIPM.
Note 4: Fault signal is output when short circuit or N-side control supply under-voltage protection works. The fault output pulse-width tFO depends on the capacitance of
CFO. (CFO (typ.) = tFO x (9.1 x 10-6) [F])
Note 5: DIPIPM doesn't shut down IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that
user defined, controller (MCU) should stop the DIPIPM immediately. This output might exceed 5V when temperature rises excessively, so it is recommended to
insert a clamp Di between controller supply (e.g. 5V) and VOT output for overvoltage protection. Temperature of LVIC vs. VOT output characteristics is described in
Fig.2
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
4
Fig. 2 Temperature of LVIC vs. VOT Output Characteristics
3.63
3.57
3.69
2.5
3.0
3.5
4.0
4.5
5.0
40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
LVIC temperature (°C)
V
OT
output (V)
Max .
Typ.
Min.
Please refer the application note about the usage of VOT too.
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
5
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter Condition Limits Unit
Min. Typ. Max.
Mounting torque Mounting screw : M4 Recommended 1.18Nꞏm 0.98 1.18 1.47 Nꞏm
Terminal pulling strength Load 19.6N JEITA-ED-4701 10 - - s
Terminal bending strength Load 9.8N, 90deg. bend JEITA-ED-4701 2 - - times
Weight - 46 - g
Heat-sink flatness (Note 6) -50 - 100 μm
Note 6: Measurement point of heat-sink flatness
RECOMMENDED OPERATION CONDITIONS
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
VCC Supply voltage Applied between P-NU, NV, NW 350 600 800 V
VD Control supply voltage Applied between VP1-VPC, VN1-VNC 13.5 15.0 16.5 V
VDB Control supply voltage Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS 13.0 15.0 18.5 V
ΔVD, ΔVDB Control supply variation -1 - +1 V/μs
tdead
Arm shoot-through blocking time
For each input signal 3.0 - - μs
fPWM PWM input frequency TC ≤ 100°C, Tj ≤ 125°C - - 20 kHz
IO Allowable r.m.s. current
VCC = 600V, VD = 15V, P.F = 0.8,
Sinusoidal PWM
TC ≤ 100°C, Tj ≤ 125°C (Note 7)
fPWM= 5kHz - - 13.7
Arms
fPWM= 15kHz - - 9.2
PWIN(on)
Minimum input pulse width
(Note 8) 1.5 - -
μs
PWIN(off)
350≤ VCC ≤ 800V, 13.5≤ VD ≤ 16.5V,
13.0≤ VDB ≤ 18.5V, -20°C ≤ TC ≤ 100°C,
N line wiring inductance less than 10nH
(Note 9)
IC25A 2.3 - -
25A<IC42.5A 2.9 - -
VNC V
NC variation Between VNC-NU, NV, NW (including surge) -5.0 - +5.0 V
Tj Junction temperature -20 - +125 °C
Note 7: The allowable r.m.s. current value depends on the actual application conditions.
8: DIPIPM might not make response to the input on signal with pulse width less than PWIN (on).
9: IPM might make no response or delayed response (P-side IGBT only) for the input signal with off pulse width less than PWIN(off).
Please refer Fig. 3 about delayed response.
Fig. 3 About Delayed Response Against Shorter Input Off Signal Than PWIN(off) (P-side only)
Solid line …Off pulse width ≥ PWIN(off);
Turn on time t1 (Normal delay)
Broken line …Off pulse width < PWIN(off);
Turn on time t2 (Longer delay in some cases)
P-side Control Input
Internal IGBT Gate
Output Current Ic t1
t2
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
6
Fig. 4 Timing Charts of DIPIPM Protective Functions
[A] Short-Circuit Protection (N-side only with the external sense resistor and RC filter)
a1. Normal operation: IGBT ON and outputs current.
a2. Short circuit current detection (SC trigger)
(It is recommended to set RC time constant 1.5~2.0μs so that IGBT shut down within 2.0μs when SC occurs.)
a3. All N-side IGBT's gates are hard interrupted.
a4. All N-side IGBTs turn OFF.
a5. FO outputs with a fixed pulse width determined by the external capacitor CFO.
a6. Input = “L”: IGBT OFF
a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH).
(IGBT of each phase can return to normal state by inputting ON signal to each phase.)
a8. Normal operation: IGBT ON and outputs current.
[B] Under-Voltage Protection (N-side, UVD)
b1. Control supply voltage VD exceeds under voltage reset level (UVDr), but IGBT turns ON by next ON signal (LH).
(IGBT of each phase can return to normal state by inputting ON signal to each phase.)
b2. Normal operation: IGBT ON and outputs current.
b3. VD level drops to under voltage trip level. (UVDt).
b4. All N-side IGBTs turn OFF in spite of control input condition.
b5. Fo outputs for the period determined by the capacitance CFO, but output is extended during VD keeps below UVDr.
b6. VD level reaches UVDr.
b7. Normal operation: IGBT ON and outputs current by next ON signal (LH).
Lower-side control
input
Protection circuit state
Internal IGBT gate
Output current Ic
Sense voltage of
the sense resistor
Error output Fo
SC trip current level
a2
SET RESET
SC reference voltage
a1
a3
a6
a7
a4
a8
a5
Delay by RC filtering
UVDr
RESET SET RESET
UVDt
b1
b2
b3
b4
b6
b7
b5
Control input
Protection circuit state
Control supply voltage VD
Output current Ic
Error output Fo
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
7
[C] Under-Voltage Protection (P-side, UVDB)
c1. Control supply voltage VDB rises. After the voltage reaches under voltage reset level UVDBr, IGBT turns on by next ON signal (LH).
c2. Normal operation: IGBT ON and outputs current.
c3. VDB level drops to under voltage trip level (UVDBt).
c4. IGBT of corresponding phase only turns OFF in spite of control input signal level, but there is no FO signal output.
c5. VDB level reaches UVDBr.
c6. Normal operation: IGBT ON and outputs current by next ON signal (LH).
Fig. 5 MCU I/O Interface Circuit
Fig. 6 Wiring Pattern around the Shunt Resistor in the Case of Inserting into Main Current Path
Control input
Protection circuit state
Control supply voltage VDB
Output current Ic
Error output Fo
UVDBr
RESET SET RESET
UVDBt
Keep High-level (no fault output)
c1
c2
c3
c4
c5
c6
UP,VP,WP,UN,VN,WN
Fo
VNC(Logic)
DIPIPM
MCU
10kΩ
5V line
3.3kΩ
(
min
)
Note)
Design for input RC filter depends on the PWM control scheme used in the
application and the wiring impedance of the printed circuit board.
But because noisier in the application for 1200V, it is strongly recommended to
insert RC filter. (Time constant: over 100ns. e.g. 100Ω, 1000pF)
The DIPIPM input signal interface integrates a min. 3.3kΩ pull-down resistor.
Therefore, when using RC filter, be careful to satisfy turn-on threshold voltage
requirement.
Fo output is open drain type. It should be pulled up to the positive side of 5V or
15V power supply with the resistor that limits Fo sink current IFo under 1mA. In
the case of pulling up to 5V supply, over 5.1kΩ is needed. (10kΩ is
recommended.)
Low inductance shunt resistor like surface mounted (SMD) type is recommended.
Protection current level ISC changes by inserting shunt resistor.
N1
VNC
NU
NV
NW
DIPIPM
GND wiring from VNC should
be connected close to the
terminal of shunt resisto
r
.
Shunt
resistors
Each wiring Inductance should be less than 10nH.
Inductance of a copper pattern with
length=17mm, width=3mm is about 10nH.
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
8
Fig. 7 Example of Application Circuit
Note
1 :If control GND and power GND are patterned by common wiring, it may cause malfunction by fluctuation of power GND level. It is recommended to connect
control GND and power GND at only a N1 point at which NU, NV, NW are connected to power GND line.
2 :It is recommended to insert a Zener diode D1 (24V/1W) between each pair of control supply terminals to prevent surge destruction.
3 :To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally inserting a
0.1μ~0.22μF snubber capacitor C3 between the P-N1 terminals is recommended.
4 :R1, C4 of RC filter for preventing protection circuit malfunction is recommended to select tight tolerance, temp-compensated type. The time constant R1C4
should be set so that SC current is shut down within 2μs. (1.5μs~2μs is general value.) SC interrupting time might vary with the wiring pattern, so the enough
evaluation on the real system is recommended. If R1 is too small, it may leads to delay of protection. So R1 should be min. 10 times larger resistance than Rs.
(100 times is recommended.)
5 :To prevent erroneous operation, the wiring of A, B, C should be as short as possible.
6 :For sense resistor, the variation within 1%(including temperature characteristics), low inductance type is recommended. And the over 1/8W is recommended,
but it is necessary to evaluate in your real system finally.
7 :To prevent erroneous SC protection, the wiring from VSC terminal to CIN filter should be divided at the point D that is close to the terminal of sense resistor.
And the wiring should be patterned as short as possible.
8 :All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency characteristic electrolytic type, and
C2: 0.22μ~2.0μF, good temperature, frequency and DC bias characteristic ceramic type are recommended.)
9 :Input drive is High-active type. There is a min. 3.3kΩ pull-down resistor in the input circuit of IC. To prevent malfunction, the wiring of each input should be as
short as possible. And it is strongly recommended to insert RC filter (e.g. R3=100Ω and C5=1000pF) and confirm the input signal level to meet the turn-on
and turn-off threshold voltage. Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.
10 :Fo output is open drain type. It should be pulled up to MCU or control power supply (e.g. 5V,15V) by a resistor that makes IFo up to 1mA. (IFO is estimated
roughly by the formula of control power supply voltage divided by pull-up resistance. In the case of pulled up to 5V, 10kΩ (5kΩ or more) is recommended.)
11 :Error signal output width (tFo) can be set by the capacitor connected to CFO terminal. CFO(typ.) = tFo x (9.1 x 10-6) (F)
12 :High voltage (VRRM =1200V or more) and fast recovery diode (trr=less than 100ns or less) should be used for D2 in the bootstrap circuit.
13 :If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause erroneous operation. To avoid such problem, voltage
ripple of control supply line should meet dV/dt ≤+/-1V/μs, Vripple≤2Vp-p.
14 :For DIPIPM, it isn't recommended to drive same load by parallel connection with other phase IGBT or other DIPIPM.
R3
C5
R3
C5
R3
C5
R3
C5
R3
C5
VPC(15)
M
MCU
C2
15
V
VD
C4 R1 Sense
resistor
N1
C
5V
A
+
UN(27)
VN(28)
WN(29)
Fo(26)
VN1(21)
VNC(22)
P(40)
U(39)
W(37)
NU(36)
LVIC
V(38)
CIN(24)
NV(35)
NW(34)
IGBT1
IGBT2
IGBT3
IGBT4
IGBT5
IGBT6
Di1
Di2
Di3
Di4
Di5
Di6
C1
VOT(23)
WP(13)
VWFB(16)
VWFS(18)
C1 D1 C2
+
VP1(14)
C2
D2
VP(7)
HVIC
VVFS(12)
C1 D1 C2
+
VP1(9)
C2
D2
UP(1)
HVIC
VUFB(4)
VUFS(6)
C1 D1 C2
+
VP1(3)
C2
D2
CFO(25)
D1
C3
VSC(19)
+
R2
Rs
D
B
R3
C5
VVFB(10)
HVIC
Power GND wiring
Control GND wiring
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
9
Fig. 8 Package Outlines
Dimensions in mm
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
10
Important Notice
The information contained in this datasheet shall in no event be regarded as a guarantee of conditions or
characteristics. This product has to be used within its specified maximum ratings, and is subject to
customer’s compliance with any applicable legal requirement, norms and standards.
Except as otherwise explicitly approved by Mitsubishi Electric Corporation in a written document signed by
authorized representatives of Mitsubishi Electric Corporation, our products may not be used in any
applications where a failure of the product or any consequences of the use thereof can reasonably be
expected to result in personal injury.
In usage of power semiconductor, there is always the possibility that trouble may occur with them by the
reliability lifetime such as Power Cycle, Thermal Cycle or others, or when used under special circumstances
(e.g. condensation, high humidity, dusty, salty, highlands, environment with lots of organic matter / corrosive
gas / explosive gas, or situations which terminals of semiconductor products receive strong mechanical
stress). Therefore, please pay sufficient attention to such circumstances. Further, depending on the
technical requirements, our semiconductor products may contain environmental regulation substances, etc.
If there is necessity of detailed confirmation, please contact our nearest sales branch or distributor.
The contents or data contained in this datasheet are exclusively intended for technically trained staff.
Customer's technical departments should take responsibility to evaluate the suitability of Mitsubishi Electric
Corporation product for the intended application and the completeness of the product data with respect to
such application. In the customer's research and development, please evaluate it not only with a single
semiconductor product but also in the entire system, and judge whether it's applicable. As required, pay
close attention to the safety design by installing appropriate fuse or circuit breaker between a power supply
and semiconductor products to prevent secondary damage. Please also pay attention to the application note
and the related technical information.
< DIPIPM >
PS22A76
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : January 2021
11
© MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
DIPIPM and CSTBT are trademarks of MITSUBISHI ELECTRIC CORPORATION.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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