< DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FEATURES AND RATINGS 3 phase DC/AC inverter 1200V / 25A Built-in LPT-CSTBT (5th generation IGBT) Insulated transfer molding package N-side IGBT open emitter APPLICATION AC 400V class motor control INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC) Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) Temperature output : Outputting LVIC temperature by analog signal Input interface : 5V line, Schmitt trigger receiver circuit (High Active) UL Recognized : UL1557 File E80276 INTERNAL CIRCUIT VUFB VUFS P HVIC1 IGBT1 VP1 U Di1 Ho U VVFB VVFS HVIC2 IGBT2 VP1 VP Di2 Ho V VWFB VWFS HVIC3 VP1 WP IGBT3 Di3 Ho W VPC LVIC IGBT4 Di4 UOUT NU VN1 IGBT5 Di5 VOUT NV UN VN WN IGBT6 Di6 WOUT NW Fo VOT VNC CFO CIN Vsc Publication Date : January 2021 1 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCC VCC(surge) VCES IC ICP PC Tj Parameter Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature Condition Applied between P-NU,NV,NW Applied between P-NU,NV,NW TC= 25C TC= 25C, up to 1ms TC= 25C, per 1 chip Ratings 900 1000 1200 25 50 113.6 -20~+150 Unit V V V A A W C Ratings 20 20 -0.5~VD+0.5 -0.5~VD+0.5 1 -0.5~VD+0.5 Unit V V V V mA V Ratings Unit 800 V -20~+100 -40~+125 C C 2500 Vrms CONTROL (PROTECTION) PART Symbol VD VDB VIN VFO IFO VSC Parameter Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage Condition Applied between VP1-VPC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS Applied between UP, VP, WP-VPC, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC TOTAL SYSTEM Symbol TC Tstg Parameter Self protection supply voltage limit (Short circuit protection capability) Module case operation temperature Storage temperature Viso Isolation voltage VCC(PROT) Condition VD = 13.5~16.5V, Inverter Part Tj = 125C, non-repetitive, up to 2s (Note 1) 60Hz, Sinusoidal, AC 1min, between connected all pins and heat sink plate Note 1: Tc measurement point is described in Fig.1. Fig. 1: TC MEASUREMENT POINT Measurement point for Tc THERMAL RESISTANCE Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to case thermal resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. - Limits Typ. - Max. 0.88 1.40 Unit K/W K/W Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100m~+200m on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2K/W (per 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/m*k). Publication Date : January 2021 2 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton tC(on) toff tC(off) trr ICES Parameter Min. 0.50 - Limits Typ. 1.90 2.00 2.20 1.20 0.60 2.40 0.60 0.50 - Max. 2.60 2.70 2.80 1.90 0.90 3.50 0.90 1 10 Min. - Limits Typ. - Max. 5.60 5.60 1.10 1.10 42.5 - - A 10.0 - 12.0 V 10.5 - 12.5 V Trip level 10.3 - 12.5 V Reset level 10.8 - 13.0 V 4.9 1.6 0.70 0.8 3.57 2.4 1.00 3.63 0.95 1.50 3.5 3.69 V V ms mA Condition Collector-emitter saturation voltage VD=VDB = 15V, VIN= 5V, IC= 25A FWDi forward voltage VIN= 0V, -IC= 25A Switching times VCC= 600V, VD= VDB= 15V IC= 25A, Tj= 125C, VIN= 05V Inductive Load (upper-lower arm) Collector-emitter cut-off current VCE=VCES Tj= 25C Tj= 125C Tj= 25C Tj= 125C Unit V V s s s s s mA CONTROL (PROTECTION) PART Symbol Parameter ID Circuit current ISC Short circuit trip level UVDBt P-side Control supply under-voltage protection(UV) N-side Control supply under-voltage protection(UV) UVDt UVDr VFOH VFOL tFO IIN Vth(on) Vth(off) VOT VD=15V, VIN=0V VD=15V, VIN=5V VD=VDB=15V, VIN=0V Each part of VUFB-VUFS, VVFB-VVFS, VWFB-VWFS VD=VDB=15V, VIN=5V -20CTj125C, Rs= 82.5 (1%), Not connecting outer shunt resistors to NU,NV,NW terminals Trip level Tj 125C Reset level Total of VP1-VPC, VN1-VNC IDB UVDBr Condition Fault output voltage Fault output pulse width Input current ON threshold voltage OFF threshold voltage Temperature output Tj 125C VSC = 0V, FO terminal pulled up to 5V by 10k VSC = 1V, IFO = 1mA CFO=22nF VIN = 5V (Note 3) (Note 4) Applied between UP, VP, WP, UN, VN, WN-VNC (Note 5) LVIC temperature = 85C Unit mA V V Note 3: Short circuit protection detects sense current divided from main current at N-side IGBT and works for N-side IGBT only. In the case that outer shunt resistor is inserted into main current path, protection current level ISC changes. For details, please refer the application note for this DIPIPM. Note 4: Fault signal is output when short circuit or N-side control supply under-voltage protection works. The fault output pulse-width tFO depends on the capacitance of CFO. (CFO (typ.) = tFO x (9.1 x 10-6) [F]) Note 5: DIPIPM doesn't shut down IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that user defined, controller (MCU) should stop the DIPIPM immediately. This output might exceed 5V when temperature rises excessively, so it is recommended to insert a clamp Di between controller supply (e.g. 5V) and VOT output for overvoltage protection. Temperature of LVIC vs. VOT output characteristics is described in Fig.2 Publication Date : January 2021 3 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE Fig. 2 Temperature of LVIC vs. VOT Output Characteristics 5.0 Max. Typ. 4.5 Min. V OT output (V) 4.0 3.69 3.63 3.57 3.5 3.0 2.5 40 45 50 55 60 65 70 75 80 85 90 LVIC temperature (C) Please refer the application note about the usage of VOT too. Publication Date : January 2021 4 95 100 105 110 115 120 125 130 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE MECHANICAL CHARACTERISTICS AND RATINGS Parameter Condition Mounting torque Terminal pulling strength Terminal bending strength Mounting screw : M4 Load 19.6N Load 9.8N, 90deg. bend Recommended 1.18Nm JEITA-ED-4701 JEITA-ED-4701 Min. 0.98 10 2 Limits Typ. 1.18 - - 46 - g -50 - 100 m Weight Heat-sink flatness (Note 6) Unit Max. 1.47 - Nm s times Note 6: Measurement point of heat-sink flatness RECOMMENDED OPERATION CONDITIONS Symbol Parameter VCC VD VDB VD, VDB tdead fPWM Supply voltage Control supply voltage Control supply voltage Control supply variation Arm shoot-through blocking time PWM input frequency IO Allowable r.m.s. current VCC = 600V, VD = 15V, P.F = 0.8, Sinusoidal PWM (Note 7) TC 100C, Tj 125C Minimum input pulse width 350 VCC 800V, 13.5 VD 16.5V, 13.0 VDB 18.5V, -20C TC 100C, N line wiring inductance less than 10nH Min. 350 13.5 13.0 -1 3.0 - Limits Typ. 600 15.0 15.0 - Max. 800 16.5 18.5 +1 20 fPWM= 5kHz - - 13.7 fPWM= 15kHz - - 9.2 1.5 - - IC25A 2.3 - - 25A PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE Fig. 4 Timing Charts of DIPIPM Protective Functions [A] Short-Circuit Protection (N-side only with the external sense resistor and RC filter) a1. Normal operation: IGBT ON and outputs current. a2. Short circuit current detection (SC trigger) (It is recommended to set RC time constant 1.5~2.0s so that IGBT shut down within 2.0s when SC occurs.) a3. All N-side IGBT's gates are hard interrupted. a4. All N-side IGBTs turn OFF. a5. FO outputs with a fixed pulse width determined by the external capacitor CFO. a6. Input = "L": IGBT OFF a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) a8. Normal operation: IGBT ON and outputs current. Lower-side control input a6 SET Protection circuit state RESET a3 Internal IGBT gate a4 SC trip current level Output current Ic a8 a1 a7 a2 SC reference voltage Sense voltage of the sense resistor Delay by RC filtering Error output Fo a5 [B] Under-Voltage Protection (N-side, UVD) b1. Control supply voltage VD exceeds under voltage reset level (UVDr), but IGBT turns ON by next ON signal (LH). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) b2. Normal operation: IGBT ON and outputs current. b3. VD level drops to under voltage trip level. (UVDt). b4. All N-side IGBTs turn OFF in spite of control input condition. b5. Fo outputs for the period determined by the capacitance CFO, but output is extended during VD keeps below UVDr. b6. VD level reaches UVDr. b7. Normal operation: IGBT ON and outputs current by next ON signal (LH). Control input RESET Protection circuit state Control supply voltage VD UVDr SET b1 UVDt b2 b3 b4 Output current Ic Error output Fo b5 Publication Date : January 2021 6 RESET b6 b7 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE [C] Under-Voltage Protection (P-side, UVDB) c1. Control supply voltage VDB rises. After the voltage reaches under voltage reset level UVDBr, IGBT turns on by next ON signal (LH). c2. Normal operation: IGBT ON and outputs current. c3. VDB level drops to under voltage trip level (UVDBt). c4. IGBT of corresponding phase only turns OFF in spite of control input signal level, but there is no FO signal output. c5. VDB level reaches UVDBr. c6. Normal operation: IGBT ON and outputs current by next ON signal (LH). Control input RESET Protection circuit state SET RESET UVDBr c1 Control supply voltage VDB UVDBt c5 c3 c2 c6 c4 Output current Ic Error output Fo Keep High-level (no fault output) Fig. 5 MCU I/O Interface Circuit 5V line 10k DIPIPM UP,VP,WP,UN,VN,WN MCU 3.3k(min) Fo VNC(Logic) Note) Design for input RC filter depends on the PWM control scheme used in the application and the wiring impedance of the printed circuit board. But because noisier in the application for 1200V, it is strongly recommended to insert RC filter. (Time constant: over 100ns. e.g. 100, 1000pF) The DIPIPM input signal interface integrates a min. 3.3k pull-down resistor. Therefore, when using RC filter, be careful to satisfy turn-on threshold voltage requirement. Fo output is open drain type. It should be pulled up to the positive side of 5V or 15V power supply with the resistor that limits Fo sink current IFo under 1mA. In the case of pulling up to 5V supply, over 5.1k is needed. (10k is recommended.) Fig. 6 Wiring Pattern around the Shunt Resistor in the Case of Inserting into Main Current Path DIPIPM Each wiring Inductance should be less than 10nH. Inductance of a copper pattern with length=17mm, width=3mm is about 10nH. VNC NU NV NW N1 Shunt resistors GND wiring from VNC should be connected close to the terminal of shunt resistor. Low inductance shunt resistor like surface mounted (SMD) type is recommended. Protection current level ISC changes by inserting shunt resistor. Publication Date : January 2021 7 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE Fig. 7 Example of Application Circuit UP(1) R3 C5 IGBT1 VP1(3) C2 P(40) Di1 HVIC VUFB(4) D2 + U(39) VUFS(6) C1 D1 C2 R3 C5 VP(7) IGBT2 VP1(9) C2 Di2 HVIC VVFB(10) D2 + V(38) VVFS(12) C1 D1 C2 R3 C5 C2 WP(13) VP1(14) VPC(15) IGBT3 Di3 HVIC VWFB(16) MCU D2 + W(37) + VWFS(18) IGBT4 C1 D1 C2 Di4 C3 UN(27) R3 C5 R3 C5 R3 C5 5V M NU(36) VN(28) WN(29) IGBT5 Di5 CFO(25) NV(35) R2 Fo(26) LVIC IGBT6 Di6 VOT(23) NW(34) 15V VD C1 VN1(21) + D1 C2 VNC(22) C VSC(19) CIN(24) B C4 D R1 Rs Sense resistor A Control GND wiring N1 Power GND wiring Note 1 :If control GND and power GND are patterned by common wiring, it may cause malfunction by fluctuation of power GND level. It is recommended to connect control GND and power GND at only a N1 point at which NU, NV, NW are connected to power GND line. 2 :It is recommended to insert a Zener diode D1 (24V/1W) between each pair of control supply terminals to prevent surge destruction. 3 :To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally inserting a 0.1~0.22F snubber capacitor C3 between the P-N1 terminals is recommended. 4 :R1, C4 of RC filter for preventing protection circuit malfunction is recommended to select tight tolerance, temp-compensated type. The time constant R1C4 should be set so that SC current is shut down within 2s. (1.5s~2s is general value.) SC interrupting time might vary with the wiring pattern, so the enough evaluation on the real system is recommended. If R1 is too small, it may leads to delay of protection. So R1 should be min. 10 times larger resistance than Rs. (100 times is recommended.) 5 :To prevent erroneous operation, the wiring of A, B, C should be as short as possible. 6 :For sense resistor, the variation within 1%(including temperature characteristics), low inductance type is recommended. And the over 1/8W is recommended, but it is necessary to evaluate in your real system finally. 7 :To prevent erroneous SC protection, the wiring from VSC terminal to CIN filter should be divided at the point D that is close to the terminal of sense resistor. And the wiring should be patterned as short as possible. 8 :All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency characteristic electrolytic type, and C2: 0.22~2.0F, good temperature, frequency and DC bias characteristic ceramic type are recommended.) 9 :Input drive is High-active type. There is a min. 3.3k pull-down resistor in the input circuit of IC. To prevent malfunction, the wiring of each input should be as short as possible. And it is strongly recommended to insert RC filter (e.g. R3=100 and C5=1000pF) and confirm the input signal level to meet the turn-on and turn-off threshold voltage. Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 10 :Fo output is open drain type. It should be pulled up to MCU or control power supply (e.g. 5V,15V) by a resistor that makes IFo up to 1mA. (IFO is estimated roughly by the formula of control power supply voltage divided by pull-up resistance. In the case of pulled up to 5V, 10k (5k or more) is recommended.) 11 :Error signal output width (tFo) can be set by the capacitor connected to CFO terminal. CFO(typ.) = tFo x (9.1 x 10-6) (F) 12 :High voltage (VRRM =1200V or more) and fast recovery diode (trr=less than 100ns or less) should be used for D2 in the bootstrap circuit. 13 :If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause erroneous operation. To avoid such problem, voltage ripple of control supply line should meet dV/dt +/-1V/s, Vripple2Vp-p. 14 :For DIPIPM, it isn't recommended to drive same load by parallel connection with other phase IGBT or other DIPIPM. Publication Date : January 2021 8 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE Fig. 8 Package Outlines Dimensions in mm Publication Date : January 2021 9 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE Important Notice The information contained in this datasheet shall in no event be regarded as a guarantee of conditions or characteristics. This product has to be used within its specified maximum ratings, and is subject to customer's compliance with any applicable legal requirement, norms and standards. Except as otherwise explicitly approved by Mitsubishi Electric Corporation in a written document signed by authorized representatives of Mitsubishi Electric Corporation, our products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. In usage of power semiconductor, there is always the possibility that trouble may occur with them by the reliability lifetime such as Power Cycle, Thermal Cycle or others, or when used under special circumstances (e.g. condensation, high humidity, dusty, salty, highlands, environment with lots of organic matter / corrosive gas / explosive gas, or situations which terminals of semiconductor products receive strong mechanical stress). Therefore, please pay sufficient attention to such circumstances. Further, depending on the technical requirements, our semiconductor products may contain environmental regulation substances, etc. If there is necessity of detailed confirmation, please contact our nearest sales branch or distributor. The contents or data contained in this datasheet are exclusively intended for technically trained staff. Customer's technical departments should take responsibility to evaluate the suitability of Mitsubishi Electric Corporation product for the intended application and the completeness of the product data with respect to such application. In the customer's research and development, please evaluate it not only with a single semiconductor product but also in the entire system, and judge whether it's applicable. As required, pay close attention to the safety design by installing appropriate fuse or circuit breaker between a power supply and semiconductor products to prevent secondary damage. Please also pay attention to the application note and the related technical information. Publication Date : January 2021 10 < DIPIPM > PS22A76 TRANSFER MOLDING TYPE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Electric Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. *Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Electric Semiconductor product distributor for further details on these materials or the products contained therein. (c) MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. DIPIPM and CSTBT are trademarks of MITSUBISHI ELECTRIC CORPORATION. Publication Date : January 2021 11