THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 1 THine Electronics, Inc.
7
PLL
TA +/-
TB +/-
TC +/-
TD +/-
TCLK +/-
R/F
/PDWN
TA0-6
TC0-6
TD0-6
TRANSMITTER
(8 to 160MHz)
CMOS/TTL
7
RS
7
TB0-6 7
INPUTS
CLOCK
(LVDS)
8-160MHz
DATA
(LVDS)
(56-1120Mbit/On Each
LVDS Channel)
CLKIN
THC63LVDM83E
CMOS/TTL PARALLEL
TO SERIAL
7
PLL
TA +/-
TB +/-
TC +/-
TD +/-
TCLK +/-
R/F
/PDWN
TA0-6
TC0-6
TD0-6
TRANSMITTER
(8 to 160MHz)
CMOS/TTL
7
RS
7
TB0-6 7
INPUTS
CLOCK
(LVDS)
8-160MHz
DATA
(LVDS)
(56-1120Mbit/On Each
LVDS Channel)
CLKIN
THC63LVDM83E
CMOS/TTL PARALLEL
TO SERIAL
THC63LVDM83E
SMALL PACKAGE / 24Bit COLOR LVDS TRANSMITTER
General Description
The THC63LVDM83E transmitter is designed to
support pixel data transmission between Host and
Flat Panel Display up to 1080p/WUXGA resolutions.
The THC63LVDM83E converts 28bits of
CMOS/TTL data into LVDS (Low Voltage
Differential Signaling) data stream. The transmitter
can be programmed for rising edge or falling edge
clocks through a dedicated pin. At a transmit clock
frequency of 160MHz, 24bits of RGB data and 4bits
of timing and control data (HSYNC, VSYNC, DE,
CONT1) are transmitted at an effective rate of
1120Mbps per LVDS channel.
Features
49pin 0.65mm pitch VFBGA Package
Wide dot clock range: 8-160MHz suited for
TV Signal : NTSC(12.27MHz) - 1080p(148.5MHz)
PC Signal : QVGA(8MHz) - WUXGA(154MHz)
1.2V to 3.3V CMOS inputs are supported.
LVDS swing is reducible by RS-pin to reduce EMI
and power consumption.
PLL requires no external components.
On chip jitter filtering.
Spread Spectrum Clock input tolerant.
Power down mode.
Input clock triggering edge is selectable by R/F-pin.
Operates from a Single 3.3V Supply and
110mW(typ.) at 75MHz.
Block Diagram
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 2 THine Electronics, Inc.
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ATA6 TA5 TA4 TA3 TA2 TA1 TA0 A
BTB4 TD3 TD2 TD1 TD0 TA- TA+ B
CTB5 TB0 GND VCC RS TB- TB+ C
DTB6 TB1 GND LVDS
VCC
LVDS
VCC TC- TC+ D
ETC0 TB2 GND PLL
VCC R/F TCLK- TCLK+ E
FTC1 TB3 TD4 TD5 TD6 TD- TD+ F
GTC2TC3TC4TC5TC6CLKIN/PDWN
G
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TOP VIEW
Ball Out
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 3 THine Electronics, Inc.
Pin Description
Pin Name Pin # Direction Type Description
TA+, TA- B7, B6
TB+, TB- C7, C6
TC+, TC- D7, D6
TD+, TD- F7, F6
LVDS Data Out
TCLK+,
TCLK-
E7, E6
Output LVDS
LVDS Clock Out
TA0 ~ TA6 A7,A6,A5,A4,A3,A2,A1
TB0 ~ TB6 C2,D2,E2,F2,B1,C1,D1
TC0 ~ TC6 E1,F1,G1,G2,G3,G4,G5
TD0 ~ TD6 B5,B4,B3,B2,F3,F4,F5
Pixel Data Input
/PDWN G7 H : Normal operation
L : Power down (all outputs are Hi-Z)
RS C5 LVDS swing mode, VREF select See Fig.5, 6
RS LVDS
Swing
Small Swing
Input Support
VCC 350mV N/A
0.6 ~ 1.4V 350mV RS=VREF
GND 200mV N/A
VREF is Input Reference Voltage
R/F E5 Input Clock Triggering Edge Select
H : Rising edge
L : Falling edge
CLKIN G6
Input LV-CMOS
/TTL
Input Clock
VCC C4 Power Supply Pin for CMOS input and digital
circuit.
GND C3,D3,E3 Ground Pins for Common.
LVDS VCC D4,D5 Power Supply Pins for LVDS Outputs.
PLL VCC E4
Power ---
Power Supply Pin for PLL circuit.
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 4 THine Electronics, Inc.
Absolute Maximum Ratings
Parameter Min Max Units
Supply Voltage -0.3 +4.0 V
LV-CMOS/TTL Input Voltage -0.3 VCC + 0.3 V
LVDS Transmitter Output Voltage -0.3 VCC + 0.3 V
Output Current -30 30 mA
Junction Temperature +125
°C
Storage Temperature -55 +125 °C
Reflow Peak Temperature +260
°C
Reflow Peak Temperature Time 10 sec
Maximum Power Dissipation @+25°C 1.2 W
Recommended Operating Conditions
Symbol Parameter Min Typ Max Units
All Supply Voltage 3.0 3.3 3.6 V
Ta Operating Ambient Temperature 0 25 +70 °C
Clock Frequency 8 160 MHz
THC63LVDM83E_Rev.1.30_E
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CLKIN f
TA0, TB1, TC2 f/16
TA1, TB2, TC3 f/8
TA2, TB3, TC4 f/4
TA3, TB4, TC5 f/2
TA4-6, TB0,5,6
TC0
,
1
,
6
,
TD0-2 Steady State Low
TD3-6 Steady State High
CLKIN
Tx0-6
Power Consumption VCC = 3.0~3.6V, Ta= 0~+70ºC
Symbol Parameter Conditions Typ* Max Units
RL=100Ω, CL=5pF, f=85MHz
RS=VCC, (RS=GND)
42
(34) mA
LVDS Transmitter
Operating Current
Gray Scale Pattern 16
(Fig.1)
RL=100Ω, CL=5pF, f=160MHz
RS=VCC, (RS=GND)
58
(50) mA
RL=100Ω, CL=5pF, f=85MHz
RS=VCC, (RS=GND)
45
(36)
67
(56) mA
ITCCW LVDS Transmitter
Operating Current
Worst Case Pattern
(Fig.2)
RL=100Ω, CL=5pF, f=160MHz
RS=VCC, (RS=GND)
63
(55)
92
(80) mA
ITCCS LVDS Transmitter
Power Down Current 10 µA
*Typ values are at VCC=3.3V, Ta = +25ºC
16 Grayscale Pattern
Fig.1 16 Grayscale Pattern
Worst Case Pattern
x=A,B,C,D
Fig.2 Worst Case Pattern
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 6 THine Electronics, Inc.
Electrical Characteristics
LV-CMOS/TTL DC Specifications VCC = 3.0~3.6V, Ta= 0~+70ºC
Symbol Parameter Conditions Min Typ Max Units
VIH High Level Input Voltage RS=VCC or GND 2.0 VCC V
VIL Low Level Input Voltage RS=VCC or GND GND 0.8 V
VDDQ
1 Small Swing Voltage 1.2 2.8 V
VREF Input Reference Voltage Small Swing (RS=VDDQ/2) VDDQ/2
VSH
2 Small Swing High Level
Input Voltage VREF= VDDQ/2 VDDQ/2
+100mV V
VSL
2 Small Swing Low Level
Input Voltage VREF= VDDQ/2
VDDQ/2
-100mV V
IINC Input Current GND VIN VCC
±10 μA
*Typ values are at VCC=3.3V, Ta = +25ºC
Notes : 1 VDDQ voltage defines max voltage of small swing input. It is not an actual input voltage.
2 Small swing signal is applied to TA0-6, TB0-6, TC0-6, TD0-6 and CLKIN.
LVDS Transmitter DC Specifications VCC = 3.0~3.6V, Ta= 0~+70ºC
Symbol Parameter Conditions Min Typ Max Units
Normal swing
RS=VCC 250 350 450 mV
VOD Differential Output Voltage RL=100Reduced swing
RS=GND 120 200 300 mV
VOD Change in VOD between
complementary output states 35 mV
VOC Common Mode Voltage 1.125 1.25 1.375 V
VOC Change in VOC between
complementary output states
RL=100
35 mV
IOS Output Short Circuit Current VOUT=GND, RL=100 -24 mA
IOZ Output TRI-STATE Current /PDWN=GND,
VOUT=GND to VCC
±10 μA
*Typ values are at VCC=3.3V, Ta = +25ºC
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 7 THine Electronics, Inc.
CLK IN
90%
10%
90%
10%
tTCIT tTCIT
5pF 100Ω
TA+
TA-
20%
80%
20%
80%
tLVT tLVT
Vdiff
LV-CMOS/TTL & LVDS Transmitter AC Specifications VCC = 3.0~3.6V, Ta= 0~+70ºC
Symbol Parameter Min Typ Max Units
tTCIT CLK IN Transition Time 5.0 ns
tTCP CLK IN Period 6.25 T 125 ns
tTCH CLK IN High Time 0.35T 0.5T 0.65T ns
tTCL CLK IN Low Time 0.35T 0.5T 0.65T ns
tTCD CLK IN to TCLK+/- Delay 3T ns
tTS LV-CMOS/TTL Data Setup to CLK IN 2.0 ns
tTH LV-CMOS/TTL Data Hold from CLK IN 0.0 ns
tLVT LVDS Transition Time 0.6 1.5 ns
tTOP1 Output Data Position0 (T=6.25ns ~ 20ns) -0.15 0.0 +0.15 ns
tTop0 Output Data Position1 (T=6.25ns ~ 20ns) T/7-0.15 T/7 T/7+0.15 ns
tTop6 Output Data Position2 (T=6.25ns ~ 20ns) 2T/7-0.15 2T/7 2T/7+0.15 ns
tTop5 Output Data Position3 (T=6.25ns ~ 20ns) 3T/7-0.15 3T/7 3T/7+0.15 ns
tTop4 Output Data Position4 (T=6.25ns ~ 20ns) 4T/7-0.15 4T/7 4T/7+0.15 ns
tTop3 Output Data Position5 (T=6.25ns ~ 20ns) 5T/7-0.15 5T/7 5T/7+0.15 ns
tTop2 Output Data Position6 (T=6.25ns ~ 20ns) 6T/7-0.15 6T/7 6T/7+0.15 ns
tTPLL Phase Lock Loop Set 10.0 ms
*Typ values are at VCC=3.3V, Ta = +25ºC
LV-CMOS/TTL Input
Fig.3 CLKIN Transmission Time
LVDS Output
V
Diff = (TA+) – (TA-)
LVDS Output Load
Fig.4 LVDS Output Load and Transmission Time
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 8 THine Electronics, Inc.
RS VOD
VCC
0.6 ~ 1.4V
GND 200mV
350mV
tTC P
tTS tTH
tTCH
tTCL
CLK IN
Tx0-Tx6
tTCD
TCLK+
TCLK-
VDDQ
GND
GND
VDDQ
VREF
VOC
VREF
VDDQ
/2 VDDQ /2
VDDQ/2 VDD Q/2 VDD Q/2
VOD
RS VREF
VCC ---
0.6 ~ 1.4V V
DDQ
/2
GND ---
tTCP
tTS tTH
tTC H
tTCL
CLK IN
Tx0-Tx6
tTCD
TCLK+
TCLK-
VOC
VCC
GND
GND
VCC
VOD
AC Timing Diagrams
LV-CMOS/TTL Inputs
Note :
CLKIN : for R/F=GND, denote as solid line,
for R/F = VCC, denote as dashed line.
Fig.5 CLKIN Period, High/Low Time, Setup/Hold Timing
Small Swing Inputs
Note :
CLKIN : for R/F=GND, denote as solid line,
for R/F = VCC, denote as dashed line.
Fig.6 Small Swing Inputs
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 9 THine Electronics, Inc.
Vdiff = 0V Vdiff = 0V
TCLK+/-
tTOP1
tTO P0
tTO P6
tTO P5
tTO P4
tTO P3
tTO P2
TD6 TD5 TD4 TD 3 TD 2 TD1 TD 0
TD+/-
TC6 TC5 TC4 TC 3 TC 2 TC1 TC 0
TC+/-
TB6 TB5 TB4 TB3 TB2 TB1 TB0
TB+/-
TA6 TA5 TA4 TA3 TA2 TA1 TA0
TA+/-
(Differential)
Nex t Cycle
Previous Cycle
2.0V
CLKIN
/PDWN
TCLK+/-
3.0V
VCC tTPLL
Vdiff
= 0V
LVDS Output
Fig.7 LVDS Output Data Position
Phase Lock Loop Set Time
Fig.8 PLL Lock Set Time
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 10 THine Electronics, Inc.
TA- TA+
TB- TB+
TC- TC+
TCLK- TCLK+
TD- TD+
TA5TA6
TB4
TB6
TC0
TC1
TB5
TC2 TC3 TC4 TC5 TC6
VCC
LVDS
VCC
LVDS
VCC
PLL
VCC
GND
GND
GND
TA4 TA3 TA2 TA1
TB1
TB0
TA0
TB2
TB3
R/F
RS
TD0TD1TD2TD3
TD4 TD5 TD6
/PWDNCLKIN
R2
R3
R4
R5
R6
R7
G2
G3
G4
G5
G6
G7
B2
B3
B4
B5
B6
B7
R0
R1
G0
G1
B0
B1
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A
TA6 TA5 TA4 TA3 TA2 TA1 TA0
A
B
TB4 TD3 TD2 TD1 TD0 TA- TA+
B
C
TB5 TB0 GND VCC RS TB- TB+
C
D
TB6 TB1 GND LVDS
VCC
LVDS
VCC TC- TC+
D
E
TC0 TB2 GND PLL
VCC R/F TCLK- TCLK+
E
F
TC1 TB3 TD4 TD5 TD6 TD- TD+
F
G
TC2 TC3 TC4 TC5 TC6 CLKIN /PDWN
G
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TOP VIEW
Board Layout Example
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 11 THine Electronics, Inc.
LVDS-Rx
THC63LVDM83E LVDS-Rx
TCLK+
TCLK-
IC
CLKOUT
CLKOUT
DATA
DATA LVDS-Rx
LVDS-Rx
IC
TCLK+
TCLK-
TCLK+
TCLK-
CLKOUT
DATA
DATA
THC63LVDM83E
THC63LVDM83E
IC
TCLK+
TCLK-
TCLK+
TCLK-
CLKOUT
CLKOUT
DATA
DATA
IC
THC63LVDM83E
THC63LVDM83E
Note
1) Cable Connection and Disconnection
Don’t connect and disconnect the LVDS cable, when the power is supplied to the system.
2) GND Connection
Connect the each GND of the PCB which THC63LVDM83E and LVDS-Rx on it. It is better for EMI
reduction to place GND cable as close to LVDS cable as possible.
3) Multi Drop Connection
Multi drop connection is not recommended.
4) Asynchronous use
Asynchronous using such as following systems are not recommended.
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 12 THine Electronics, Inc.
Package
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A
B
C
D
E
F
G
PIN A1 CORNER
5.0
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A
B
C
D
E
F
G
PIN A1 CORNER
3.90
Φ0.3
0.3
TOP VIEW
BOTTOM VIEW
SIDE VIEW
Unit : mm
THC63LVDM83E_Rev.1.30_E
Copyright©2012 THine Electronics, Inc. 13 THine Electronics, Inc.
Notices and Requests
1. The product specifications described in this material are subject to change without prior notice.
2. The circuit diagrams described in this material are examples of the application which may not always apply to
the customer's design. We are not responsible for possible errors and omissions in this material. Please note if
errors or omissions should be found in this material, we may not be able to correct them immediately.
3. This material contains our copy right, know-how or other proprietary. Copying or disclosing to third parties
the contents of this material without our prior permission is prohibited.
4. Note that if infringement of any third party's industrial ownership should occur by using this product, we will
be exempted from the responsibility unless it directly relates to the production process or functions of the
product.
5. This product is presumed to be used for general electric equipment, not for the applications which require
very high reliability (including medical equipment directly concerning people's life, aerospace equipment, or
nuclear control equipment). Also, when using this product for the equipment concerned with the control and
safety of the transportation means, the traffic signal equipment, or various Types of safety equipment, please
do it after applying appropriate measures to the product.
6. Despite our utmost efforts to improve the quality and reliability of the product, faults will occur with a certain
small probability, which is inevitable to a semi-conductor product. Therefore, you are encouraged to have
sufficiently redundant or error preventive design applied to the use of the product so as not to have our
product cause any social or public damage.
7. Please note that this product is not designed to be radiation-proof.
8. Customers are asked, if required, to judge by themselves if this product falls under the category of strategic
goods under the Foreign Exchange and Foreign Trade Control Law.
THine Electronics, Inc.
sales@thine.co.jp