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07/13/06
IRF6638PbF
IRF6638TRPbF
DirectFET Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.19mH, RG = 25Ω, IAS = 20A.
Notes:
DirectFET ISOMETRIC
PD - 97239
Description
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6638PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6638PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6638PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
MX
SQ SX ST MQ MX MT MP
Absolute Maximum Ratin
g
s
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
f
IDM Pulsed Drain Current
g
EAS Single Pulse Avalanche Energy
h
mJ
IAR Avalanche Current
g
A
20
Max.
20
140
200
±20
30
25
37
VDSS VGS RDS(on) RDS(on)
30V max ±20V max 2.2mΩ@ 10V 3.0mΩ@ 4.5V
012345678910 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
Typical RDS(on) (mΩ)
ID = 25A
TJ = 25°C
TJ = 125°C
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
30nC 11nC 3.2nC 27nC 18.4nC 1.8V
0 5 10 15 20 25 30 35
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 20A
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
lIdeal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
IRF6638PbF
2www.irf.com
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 2.2 2.9 mΩ
––– 3.0 3.9
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V
∆VGS(th)/∆TJGate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 105 ––– ––– S
QgTotal Gate Charge ––– 30 45
Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.7 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 3.2 ––– nC
Qgd Gate-to-Drain Charge ––– 11 –––
Qgodr Gate Charge Overdrive ––– 9.1 ––– See Fig. 15
Qsw Switch Charge (Qgs2 + Qgd)––– 14.2 –––
Qoss Output Charge ––– 18.4 ––– nC
RGGate Resistance ––– 1.3 ––– Ω
td(on) Turn-On Delay Time ––– 19 –––
trRise Time ––– 45 –––
td(off) Turn-Off Delay Time ––– 28 ––– ns
tfFall Time ––– 6.2 –––
Ciss Input Capacitance ––– 3770 –––
Coss Output Capacitance ––– 810 ––– pF
Crss Reverse Transfer Capacitance ––– 410 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 3.5
(Body Diode) A
ISM Pulsed Source Current ––– ––– 200
(Body Diode)g
VSD Diode Forward Voltage ––– ––– 1.0 V
trr Reverse Recovery Time ––– 19 29 ns
Qrr Reverse Recovery Charge ––– 27 41 nC di/dt = 300A/µs iSee Fig. 18
TJ = 25°C, IS = 20A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
VGS = 4.5V, ID = 20A i
VDS = VGS, ID = 100µA
TJ = 25°C, IF = 20A
VGS = 4.5V
ID = 20A
VGS = 0V
VDS = 15V
ID = 20A
VDD = 16V, VGS = 4.5Vc
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A i
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
VDS = 15V
VDS = 24V, VGS = 0V, TJ = 125°C
MOSFET symbol
Clamped Inductive Load
VDS = 15V, ID = 20A
Conditions
See Fig. 16 & 17
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
IRF6638PbF
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Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W) τi (sec)
1.280114 0.000322
8.725568 0.164798
21.75 2.2576
13.25114 69
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci= τi/Ri
Ci= τi/Ri
τA
τA
τ4
τ4
R4
R4
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Absolute Maximum Ratin
g
s
Parameter Units
PD @TA = 25°C Power Dissipation
e
W
PD @TA = 70°C Power Dissipation
e
PD @TC = 25°C Power Dissipation
f
TP Peak Soldering Temperature °C
TJ Operating Junction and
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Ambient
em
––– 45
RθJA Junction-to-Ambient
km
12.5 –––
RθJA Junction-to-Ambient
lm
20 ––– °C/W
RθJC Junction-to-Case
fm
––– 1.4
RθJ-PCB Junction-to-PCB Mounted 1.0 –––
Linear Derating Factor
e
W/°C
0.022
270
-40 to + 150
Max.
89
2.8
1.8
IRF6638PbF
4www.irf.com
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
12345
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
Typical RDS(on) (Normalized)
ID = 25A
VGS = 10V
VGS = 4.5V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
020 40 60 80 100 120 140 160 180 200 220
ID, Drain Current (A)
0
5
10
15
20
25
30
Typical RDS(on) (mΩ)
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
≤60µs PULSE WIDTH
Tj = 25°C
2.5V
IRF6638PbF
www.irf.com 5
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
Typical VGS(th) Gate threshold Voltage (V)
ID = 250µA
0 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
25 50 75 100 125 150
TC , Case Temperature (°C)
0
25
50
75
100
125
150
ID, Drain Current (A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
25
50
75
100
125
150
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.5A
6.5A
BOTTOM 20A
IRF6638PbF
6www.irf.com
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 16b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 17b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
Fig 17a. Switching Time Test Circuit
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
VDD
VDS
LD
D.U.T
+
-
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
IRF6638PbF
www.irf.com 7
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
RGVDD
D.U.T
DirectFET Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
S
IRF6638PbF
8www.irf.com
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
DirectFET Part Marking
IMPERIAL
MIN
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.0235
0.0008
0.003
MIN
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.616
0.020
0.08
MAX
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.01
2.41
0.676
0.080
0.17
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
METRIC
DIMENSIONS
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.0274
0.0031
0.007
IRF6638PbF
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/06
DirectFET Tape & Reel Dimension (Showing component orientation).
STANDARD OPTION (QTY 4800)
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
METRIC IMPERIAL
TR1 OPTION (QTY 1000)
IMPERIAL
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
METRIC
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
REEL DIMENSIONS
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6638TRPBF). For 1000 parts on 7"
reel, order IRF6638TR1PBF
LOADED TAPE FEED DIRECTION
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
CODE
A
B
C
D
E
F
G
H
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.063
DIMENSIONS
METRIC IMPERIAL
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
