PD -91709A IRF7343 l l l l l HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. VDSS N-Ch P-Ch 55V -55V RDS(on) 0.050 0.105 Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings Max. Parameter V DS ID @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C PD @TA = 70C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range N-Channel 55 4.7 3.8 38 P-Channel -55 -3.4 -2.7 -27 2.0 1.3 72 4.7 114 -3.4 0.20 20 5.0 -5.0 -55 to + 150 Units V A W W mJ A mJ V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient www.irf.com Typ. Max. Units 62.5 C/W 1 4/11/05 http://store.iiic.cc/ IRF7343 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance I DSS Drain-to-Source Leakage Current I GSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. 55 -55 1.0 -1.0 7.9 3.3 Typ. Max. 0.059 0.054 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 2.0 -2.0 25 -25 100 24 36 26 38 2.3 3.4 3.0 4.5 7.0 10 8.4 13 8.3 12 14 22 3.2 4.8 10 15 32 48 43 64 13 20 22 32 740 690 190 210 71 86 Min. Typ. 0.70 -0.80 60 54 120 85 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Units V V/C V S A nA nC ns pF Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 4.7A VGS = 4.5V, ID = 3.8A VGS = -10V, ID = -3.4A VGS = -4.5V, ID = -2.7A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 10V, I D = 4.5A VDS = -10V, I D = -3.1A VDS = 55V, V GS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, T J = 55C VDS = -55V, V GS = 0V, TJ = 55C VGS = 20V N-Channel I D = 4.5A, VDS = 44V, VGS = 10V P-Channel I D = -3.1A, V DS = -44V, VGS = -10V N-Channel VDD = 28V, ID = 1.0A, RG = 6.0, RD = 28 P-Channel VDD = -28V, ID = -1.0A, RG = 6.0, RD = 28 N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Max. Units Conditions 2.0 -2.0 A 38 -27 1.2 TJ = 25C, IS = 2.0A, VGS = 0V V -1.2 TJ = 25C, IS = -2.0A, VGS = 0V 90 N-Channel ns 80 TJ = 25C, I F =2.0A, di/dt = 100A/s 170 nC P-Channel TJ = 25C, I F = -2.0A, di/dt = 100A/s 130 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 ) N-Channel ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. P-Channel Starting TJ = 25C, L = 20mH RG = 25, IAS = -3.4A. 2 Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. www.irf.com http://store.iiic.cc/ IRF7343 N-Channel 100 100 VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 10 3.0V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 20s PULSE WIDTH TJ = 150 C 1 0.1 TJ = 25 C TJ = 150 C 10 TJ = 150 C 10 TJ = 25 C 1 V DS = 25V 20s PULSE WIDTH 1 3 4 5 6 0.1 0.2 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com VGS = 0 V 0.5 0.8 1.1 1.4 VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 http://store.iiic.cc/ IRF7343 ID = 4.7A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 R DS (on), Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 N-Channel 0.120 0.100 0.080 VGS = 4.5V 0.060 VGS = 10V 0.040 0 10 TJ , Junction Temperature ( C) 30 200 0.10 0.08 I D = 4.7A 0.06 0.04 A 2 4 6 8 EAS , Single Pulse Avalanche Energy (mJ) 0.12 0 TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 120 80 40 0 25 10 50 75 100 125 150 Starting TJ , Junction Temperature ( C) V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 40 Fig 6. Typical On-Resistance Vs. Drain Current Fig 5. Normalized On-Resistance Vs. Temperature RDS(on) , Drain-to-Source On Resistance ( ) 20 I D , Drain Current (A) Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com http://store.iiic.cc/ IRF7343 N-Channel 1200 VGS , Gate-to-Source Voltage (V) 1000 C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 800 600 400 Coss 200 ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 Crss 0 0 1 10 0 100 10 20 30 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 http://store.iiic.cc/ IRF7343 100 P-Channel 100 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP TOP 10 -3.0V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 -3.0V 1 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 100 100 -ISD , Reverse Drain Current (A) Fig 13. Typical Output Characteristics -I D , Drain-to-Source Current (A) Fig 12. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 V DS = -25V 20s PULSE WIDTH 1 3 4 5 6 7 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD ,Source-to-Drain Voltage (V) -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics V GS = 0 V Fig 15. Typical Source-Drain Diode Forward Voltage 6 www.irf.com http://store.iiic.cc/ IRF7343 P-Channel ID = -3.4 A R DS (on), Drain-to-Source On Resistance() RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.240 0.200 VGS = -4.5V 0.160 0.120 VGS = -10V 0.080 0 2 TJ , Junction Temperature ( C) EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to-Source On Resistance ( ) 0.45 0.35 0.25 I D = -3.4 A 0.15 0.05 5 8 11 14 8 300 10 12 ID -1.5A -2.7A BOTTOM -3.4A TOP 250 200 150 100 50 0 A 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) -V GS , Gate-to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage 6 Fig 17. Typical On-Resistance Vs. Drain Current Fig 16. Normalized On-Resistance Vs. Temperature 2 4 -ID , Drain Current (A) Fig 19. Maximum Avalanche Energy Vs. Drain Current www.irf.com 7 http://store.iiic.cc/ IRF7343 1200 20 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 960 C, Capacitance (pF) P-Channel Ciss 720 480 Coss 240 Crss 10 VDS =-48V VDS =-30V VDS =-12V 16 12 0 1 ID = -3.1A 8 4 0 100 0 --VDS , Drain-to-Source Voltage (V) 10 20 30 40 QG , Total Gate Charge (nC) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com http://store.iiic.cc/ IRF7343 SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X e e1 C .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMETERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com 9 http://store.iiic.cc/ IRF7343 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/05 10 www.irf.com http://store.iiic.cc/