VS-200MT40KPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 1Document Number: 94355
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Three Phase Bridge
(Power Module), 200 A
FEATURES
Package fully compatible with the industry
standard INT-A-PAK power modules series
High thermal conductivity package, electrically
insulated case
Low power loss
Excellent power volume ratio, outline for easy connections
to power transistor and IGBT modules
4000 VRMS isolating voltage
UL E78996 approved
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
It extends the existing range of MT...KB bridges an
extremely compact, encapsulated three phase bridge
rectifiers offering efficient and reliable operation. They are
intended for use in general purpose and heavy duty
applications.
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IO 200 A
VRRM 400 V
Package MTK
Circuit configuration Three phase bridge
MTK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IO
200 A
TC85 °C
IFSM
50 Hz 1800 A
60 Hz 1880
I2t50 Hz 16.2 kA2s
60 Hz 14.7
I2t162 kA2s
VRRM 400 V
TStg Range -40 to +150 °C
TJ
VOLTAGE RATINGS
TYPE NUMBER
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 150 °C
mA
VS-200MT40KPbF 400 500 6
VS-200MT40KPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 2Document Number: 94355
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum RMS output current
at case temperature IO120° rect. conduction angle 200 A
85 °C
Maximum peak, one-cycle
forward. non-repetitive on state
surge current
ITSM
t = 10 ms No voltage
reapplied
Initial TJ = TJ maximum
1800
A
t = 8.3 ms 1880
t = 10 ms 100 % VRRM
reapplied
1520
t = 8.3 ms 1590
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
16.2
kA2s
t = 8.3 ms 14.7
t = 10 ms 100 % VRRM
reapplied
11.6
t = 8.3 ms 12.6
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 162 kA2s
Value of threshold voltage VF(TO) TJ maximum 0.76 V
Slope resistance rt2.4 m
Maximum forward voltage drop VFM Ipk = 200 A, TJ = 25 °C, tp = 400 μs single junction 1.40 V
Isolation voltage VISOL TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s 4000
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance,
junction to case RthJC
DC operation per module 0.12
K/W
DC operation per junction 0.69
120° rect. conduction angle per module 0.14
120° rect. conduction angle per junction 0.82
Maximum thermal resistance,
case to heatsink per module RthCS Mounting surface smooth, flat and greased.
Heatsink compound thermal conductivity = 0.42 W/mK 0.033
Mounting torque ± 10 %
to heatsink A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow or
the spread of the compound. Lubricated threads.
4 to 6 Nm
Approximate weight 176 g
VS-200MT40KPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 3Document Number: 94355
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - On-State Voltage Drop Characteristics
Fig. 3 - Maximum Non-Repetitve Surge Current
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
70
120
130
140
110
100
90
80
Maximum Allowable Case
Temperature (°C)
Total Output Current (A)
80 100 120 140 160 180 200 22060
120°
(Rect)
1
100
10
1000
Peak Half Sine Wave
On-State Current
Number of Equal Amplitude
Half Cycle Current Pulses (N)
1.0 1.5 2.0 2.5 3.0
0.5
TJ = 150 °C
TJ = 25 °C
800
600
400
1400
1600
1200
1000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
10 1001
Per junction
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 ˚C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0
200
400
600
800
2000
1800
1600
1400
1200
1000
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1 1.0 10
0.01
Maximum non-repetitive surge current
versus pulse train duration. Control
Per junction
of conduction may not be maintained.
Initial TJ = 150 ˚C
No voltage reapplied
Rated VRRM reapplied
0
100
200
300
400
500
Maximum Total Power Loss (W)
Total Output Current (A)
40 80 120 160 200
0
120°
(Rect)
TJ = 125 °C
0
100
200
300
400
500
Maximum Total Power Loss (W)
Maximum Allowable Ambient
Temperature (°C)
30 60 90 120 150
0
R
thSA
= 0.025 K/W - ΔR
0.05 K/W
0.1 K/W
0.2 K/W
0.3 K/W
0.5 K/W
1.0 K/W
VS-200MT40KPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 4Document Number: 94355
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Note
To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95004
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal Impedance (K/W)
10
Steady state value
RthJC per junction = 0.69 K/W
(DC operation)
2- Current rating code: 20 = 200 A (average)
1- Vishay Semiconductors product
3- Three phase diodes bridge
4- Essential part number
5- Voltage code x 10 = V
RRM
(40 = 400 V)
6- PbF = Lead (Pb)-free
Device code
621 43
20VS- 0 MT 40 K PbF
5
A
B
C
D
E
F
+
-
~
Document Number: 95004 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 27-Aug-07 1
MTK (with and without optional barrier)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
24 ± 0.5
(0.94 ± 0.02)
38 ± 0.5
(1.5 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
35 ± 0.3
(1.38 ± 0.01)
8.5 ± 0.5
(0.34 ± 0.02)
Fast-on tab 2.8 x 0.8 (type 110)
Screws M5 x 0.8 length 10
28 ± 1
(1.11 ± 0.04)
25.5 ± 0.5
(1.004 ± 0.02)
5 ± 0.3
(0.2 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
18 ± 0.3
(0.71 ± 0.01)
12
34
56
78
ABC
F
E
D
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95004
2Revision: 27-Aug-07
Outline Dimensions
Vishay Semiconductors MTK (with and without optional barrier)
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
24 ± 0.5
(0.94 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
35 ± 0.3
(1.38 ± 0.01)
8.5 ± 0.5
(0.34 ± 0.02)
Fast-on tab 2.8 x 0.8 (type 110)
Screws M5 x 0.8 length 10
28 ± 1
(1.11 ± 0.04)
25.5 ± 0.5
(1.004 ± 0.02)
5 ± 0.3
(0.2 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
18 ± 0.3
(0.71 ± 0.01)
12
34
56
78
ABC
F
E
D
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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