1
Subject to change without notice.
www.cree.com/wireless
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Crees CGH40010 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40010, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efciency, high gain and
wide bandwidth capabilities making the CGH40010 ideal for linear and
compressed amplier circuits. The transistor is available in both screw-
down, ange and solder-down, pill packages.
Rev 4.0 May 2015
FEATURES
Up to 6 GHz Operation
16 dB Small Signal Gain at 2.0 GHz
14 dB Small Signal Gain at 4.0 GHz
13 W typical PSAT
65 % Efciency at PSAT
28 V Operation
APPLICATIONS
2-Way Private Radio
Broadband Ampliers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear ampliers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Package Types: 440166, & 440196
PN’s: CGH40010F & CGH40010P
2CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 4.0 mA 25˚C
Maximum Drain Current1IDMAX 1.5 A 25˚C
Soldering Temperature2TS245 ˚C
Screw Torque τ60 in-oz
Thermal Resistance, Junction to Case3RθJC 8.0 ˚C/W 85˚C
Case Operating Temperature3,4 TC-40, +150 ˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH40010F at PDISS = 14 W.
4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage VGS(Q) -2.7 VDC VDS = 28 V, ID = 200 mA
Saturated Drain Current IDS 2.9 3.5 A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 120 VDC VGS = -8 V, ID = 3.6 mA
RF Characteristics2 (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain GSS 12.5 14.5 dB VDD = 28 V, IDQ = 200 mA
Power Output3PSAT 10 12.5 W VDD = 28 V, IDQ = 200 mA
Drain Efciency4η55 65 % VDD = 28 V, IDQ = 200 mA, PSAT
Output Mismatch Stress VSWR 10 : 1 Y
No damage at all phase angles,
VDD = 28 V, IDQ = 200 mA,
POUT = 10 W CW
Dynamic Characteristics
Input Capacitance CGS 4.5 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS 1.3 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD 0.2 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in CGH40010-AMP.
3 PSAT is dened as IG = 0.36 mA.
4 Drain Efciency = POUT / PDC
3CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
50
60
70
80
15
16
17
18
Drain Efficiency (%)
(W), Gain (dB)
Psat, Gain, and Drain Efficiency vs Frequency of the
CGH40010F in the CGH40010-TB
VDD = 28 V, IDQ = 200 mA
0
10
20
30
40
10
11
12
13
14
3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
Drain Efficiency (%)
P
SAT
(W), Gain (dB)
Frequency (GHz)
Psat
Gain
Drain Eff
Typical Performance
Small Signal Gain and Return Loss vs Frequency
of the CGH40010 in the CGH40010-AMP
PSAT, Gain, and Drain Efciency vs Frequency of the
CGH40010F in the CGH40010-AMP
VDD = 28 V, IDQ = 200 mA
Gain (dB), Return Loss (dB)
CGH40010 Nominal Fixture Performance
S parameters
10
20
3.7 GHz
14.7 dB
3.8 GHz
14.31 dB
3.6 GHz
14.89 dB
3.4 GHz
14.9 dB
2.5 3 3.5 4 4.5
Frequency (GHz)
-20
-10
0
3.8 GHz
-8.549 dB
3. 7 GHz
-7.49 dB
3.6 GHz
-7. 497 dB
3. 4 GHz
-10.65 dB
DB(|S(2,1)|)
Fixture_2_G28V1L2w1_43_42
DB(|S(1,1)|)
Fixture_2_G28V1L2w1_43_42
Efciency
Gain
PSAT
4CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for Drain Efciency at 2.0 GHz
VDD = 28 V, IDQ = 200 mA
Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for Drain Efciency at 3.6 GHz
VDD = 28 V, IDQ = 200 mA
0
10
20
30
40
50
60
70
80
12
13
14
15
16
17
18
26 28 30 32 34 36 38 40 42
Drain Efficiency (%)
Gain (dB)
Pout (dBm)
Swept CW Data of CGH40015F vs. Output Power with Source
and Load Impedances Optimized for Drain Efficiency at 2.0 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 2.0 GHz
0
8
16
24
32
40
48
56
64
72
80
10
11
12
13
14
15
16
23 25 27 29 31 33 35 37 39 41 43
Drain Efficiency (%)
Gain (dB)
Pout (dBm)
Swept CW Data of CGH40015F vs. Output Power with Source
and Load Impedances Optimized for Drain Efficiency at 3.6 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz
5CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for P1 Power at 3.6 GHz
VDD = 28 V, IDQ = 200 mA
Simulated Maximum Available Gain and K Factor of the CGH40010F
VDD = 28 V, IDQ = 200 mA
MAG (dB)
K Factor
0
6
12
18
24
30
36
42
48
54
8
9
10
11
12
13
23 25 27 29 31 33 35 37 39 41 43
Drain Efficiency (%)
Gain (dB)
Pout (dBm)
6CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40010F
VDD = 28 V, IDQ = 100 mA
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C
Minimum Noise Figure (dB)
Noise Resistance (Ohms)
7CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 20.2 + j16.18 51.7 + j15.2
1000 8.38 + j9.46 41.4 + j28.5
1500 7.37 + j0 28.15 + j29
2500 3.19 - j4.76 19 + j9.2
3500 3.18 - j13.3 14.6 + j7.46
Note 1. VDD = 28V, IDQ = 200mA in the 440166 package.
Note 2. Optimized for power, gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be
used to maintain amplier stability.
CGH40010 Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
D
Z Source Z Load
G
S
10
12
14
16
Power Dissipation (W)
CGH40010F CW Power Dissipation De-rating Curve
0
2
4
6
8
0 25 50 75 100 125 150 175 200 225 250
Power Dissipation (W)
Maximum Case Temperature C)
Note 1
8CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGH40010-AMP Demonstration Amplier Circuit Bill of Materials
Designator Description Qty
R1,R2 RES,1/16W,0603,1%,0 OHMS 1
R3 RES,1/16W,0603,1%,47 OHMS 1
R4 RES,1/16W,0603,1%,100 OHMS 1
C6 CAP, 470PF, 5%,100V, 0603 1
C17 CAP, 33 UF, 20%, G CASE 1
C16 CAP, 1.0UF, 100V, 10%, X7R, 1210 1
C8 CAP 10UF 16V TANTALUM 1
C14 CAP, 100.0pF, +/-5%, 0603 1
C1 CAP, 0.5pF, +/-0.05pF, 0603 1
C2 CAP, 0.7pF, +/-0.1pF, 0603 1
C10,C11 CAP, 1.0pF, +/-0.1pF, 0603 2
C4,C12 CAP, 10.0pF,+/-5%, 0603 2
C5,C13 CAP, 39pF, +/-5%, 0603 2
C7,C15 CAP,33000PF, 0805,100V, X7R 2
J3,J4 CONN SMA STR PANEL JACK RECP 1
J2 HEADER RT>PLZ.1CEN LK 2 POS 1
J1 HEADER RT>PLZ .1CEN LK 5POS 1
-PCB, RO4350B, Er = 3.48, h = 20 mil 1
Q1 CGH40010F or CGH40010P 1
CGH40010-AMP Demonstration Amplier Circuit
9CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGH40010-AMP Demonstration Amplier Circuit Schematic
CGH40010-AMP Demonstration Amplier Circuit Outline
10 CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CGH40010
(Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.909 -123.34 17.19 108.22 0.027 21.36 0.343 -90.81
600 MHz 0.902 -133.06 14.86 101.82 0.028 15.60 0.329 -98.65
700 MHz 0.897 -140.73 13.04 96.45 0.028 10.87 0.321 -104.84
800 MHz 0.894 -146.96 11.58 91.78 0.029 6.84 0.317 -109.84
900 MHz 0.891 -152.16 10.41 87.61 0.029 3.33 0.316 -113.95
1.0 GHz 0.890 -156.60 9.43 83.82 0.029 0.19 0.318 -117.42
1.1 GHz 0.889 -160.47 8.62 80.31 0.029 -2.66 0.321 -120.40
1.2 GHz 0.888 -163.90 7.93 77.02 0.029 -5.28 0.326 -123.02
1.3 GHz 0.887 -166.99 7.34 73.90 0.029 -7.72 0.332 -125.36
1.4 GHz 0.887 -169.80 6.82 70.92 0.029 -10.01 0.338 -127.51
1.5 GHz 0.887 -172.39 6.38 68.05 0.029 -12.18 0.345 -129.50
1.6 GHz 0.887 -174.80 5.98 65.28 0.028 -14.24 0.353 -131.37
1.7 GHz 0.887 -177.07 5.63 62.59 0.028 -16.21 0.360 -133.15
1.8 GHz 0.887 -179.22 5.32 59.97 0.028 -18.09 0.369 -134.87
1.9 GHz 0.887 178.73 5.04 57.41 0.028 -19.91 0.377 -136.54
2.0 GHz 0.888 176.76 4.78 54.89 0.027 -21.66 0.385 -138.17
2.1 GHz 0.888 174.86 4.55 52.42 0.027 -23.35 0.393 -139.77
2.2 GHz 0.888 173.02 4.34 49.99 0.027 -24.98 0.402 -141.34
2.3 GHz 0.888 171.23 4.15 47.60 0.026 -26.56 0.410 -142.90
2.4 GHz 0.889 169.48 3.97 45.24 0.026 -28.08 0.418 -144.45
2.5 GHz 0.889 167.76 3.81 42.90 0.026 -29.55 0.426 -145.99
2.6 GHz 0.890 166.07 3.66 40.59 0.025 -30.98 0.434 -147.53
2.7 GHz 0.890 164.39 3.53 38.30 0.025 -32.36 0.442 -149.06
2.8 GHz 0.890 162.74 3.40 36.03 0.025 -33.69 0.450 -150.59
2.9 GHz 0.891 161.10 3.28 33.78 0.024 -34.97 0.458 -152.12
3.0 GHz 0.891 159.46 3.17 31.55 0.024 -36.20 0.465 -153.65
3.2 GHz 0.892 156.21 2.97 27.12 0.023 -38.51 0.479 -156.72
3.4 GHz 0.893 152.96 2.79 22.73 0.022 -40.63 0.493 -159.80
3.6 GHz 0.893 149.69 2.64 18.38 0.022 -42.52 0.505 -162.90
3.8 GHz 0.894 146.38 2.50 14.05 0.021 -44.17 0.517 -166.03
4.0 GHz 0.894 143.03 2.38 9.72 0.020 -45.56 0.527 -169.19
4.2 GHz 0.894 139.61 2.28 5.40 0.019 -46.67 0.537 -172.39
4.4 GHz 0.895 136.11 2.18 1.07 0.019 -47.46 0.546 -175.64
4.6 GHz 0.895 132.53 2.09 -3.29 0.018 -47.90 0.554 -178.95
4.8 GHz 0.895 128.85 2.01 -7.68 0.017 -47.96 0.561 177.69
5.0 GHz 0.895 125.06 1.94 -12.10 0.017 -47.61 0.568 174.25
5.2 GHz 0.895 121.15 1.88 -16.58 0.016 -46.84 0.573 170.72
5.4 GHz 0.895 117.11 1.82 -21.12 0.016 -45.67 0.578 167.10
5.6 GHz 0.895 112.94 1.77 -25.73 0.015 -44.12 0.582 163.38
5.8 GHz 0.895 108.62 1.72 -30.42 0.015 -42.30 0.586 159.54
6.0 GHz 0.895 104.15 1.68 -35.20 0.015 -40.33 0.589 155.56
To download the s-parameters in s2p format, go to the CGH40010 Product page and click on the documentation tab.
11 CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CGH40010
(Small Signal, VDS = 28 V, IDQ = 200 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.911 -130.62 18.41 105.41 0.022 19.44 0.303 -112.24
600 MHz 0.906 -139.65 15.80 99.47 0.023 14.31 0.299 -119.83
700 MHz 0.902 -146.70 13.80 94.50 0.023 10.17 0.298 -125.50
800 MHz 0.899 -152.41 12.22 90.19 0.023 6.68 0.299 -129.85
900 MHz 0.898 -157.17 10.96 86.34 0.024 3.67 0.302 -133.28
1.0 GHz 0.896 -161.24 9.92 82.82 0.024 0.99 0.305 -136.05
1.1 GHz 0.896 -164.79 9.06 79.56 0.024 -1.41 0.309 -138.34
1.2 GHz 0.895 -167.95 8.33 76.49 0.024 -3.62 0.314 -140.30
1.3 GHz 0.895 -170.80 7.70 73.57 0.023 -5.66 0.320 -142.01
1.4 GHz 0.894 -173.41 7.17 70.78 0.023 -7.56 0.326 -143.54
1.5 GHz 0.894 -175.82 6.70 68.08 0.023 -9.35 0.332 -144.94
1.6 GHz 0.894 -178.09 6.28 65.47 0.023 -11.05 0.338 -146.24
1.7 GHz 0.894 179.78 5.92 62.92 0.023 -12.66 0.345 -147.48
1.8 GHz 0.894 177.75 5.59 60.43 0.023 -14.19 0.352 -148.68
1.9 GHz 0.894 175.81 5.30 57.99 0.023 -15.65 0.358 -149.84
2.0 GHz 0.894 173.94 5.04 55.59 0.022 -17.05 0.365 -150.99
2.1 GHz 0.894 172.13 4.80 53.23 0.022 -18.39 0.372 -152.12
2.2 GHz 0.894 170.37 4.58 50.91 0.022 -19.67 0.379 -153.26
2.3 GHz 0.895 168.65 4.38 48.61 0.022 -20.90 0.386 -154.39
2.4 GHz 0.895 166.96 4.20 46.33 0.021 -22.08 0.393 -155.54
2.5 GHz 0.895 165.30 4.03 44.08 0.021 -23.20 0.400 -156.69
2.6 GHz 0.895 163.66 3.88 41.84 0.021 -24.27 0.407 -157.85
2.7 GHz 0.895 162.04 3.74 39.63 0.021 -25.28 0.414 -159.03
2.8 GHz 0.895 160.43 3.60 37.43 0.020 -26.25 0.420 -160.22
2.9 GHz 0.896 158.83 3.48 35.24 0.020 -27.16 0.427 -161.42
3.0 GHz 0.896 157.24 3.37 33.06 0.020 -28.02 0.433 -162.64
3.2 GHz 0.896 154.06 3.16 28.74 0.019 -29.57 0.446 -165.13
3.4 GHz 0.896 150.87 2.98 24.44 0.019 -30.88 0.457 -167.69
3.6 GHz 0.896 147.66 2.82 20.16 0.018 -31.95 0.468 -170.31
3.8 GHz 0.897 144.41 2.68 15.89 0.018 -32.76 0.478 -173.00
4.0 GHz 0.897 141.10 2.56 11.61 0.017 -33.30 0.488 -175.77
4.2 GHz 0.897 137.72 2.45 7.33 0.017 -33.55 0.497 -178.61
4.4 GHz 0.897 134.26 2.35 3.03 0.017 -33.50 0.505 178.47
4.6 GHz 0.897 130.71 2.26 -1.31 0.016 -33.18 0.512 175.46
4.8 GHz 0.896 127.06 2.17 -5.68 0.016 -32.58 0.518 172.36
5.0 GHz 0.896 123.30 2.10 -10.09 0.016 -31.74 0.524 169.16
5.2 GHz 0.896 119.42 2.04 -14.57 0.016 -30.72 0.529 165.86
5.4 GHz 0.896 115.41 1.98 -19.10 0.016 -29.60 0.534 162.44
5.6 GHz 0.896 111.26 1.92 -23.71 0.016 -28.46 0.537 158.89
5.8 GHz 0.895 106.97 1.87 -28.40 0.017 -27.41 0.540 155.20
6.0 GHz 0.895 102.53 1.82 -33.19 0.017 -26.54 0.543 151.36
To download the s-parameters in s2p format, go to the CGH40010 Product Page and click on the documentation tab.
12 CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CGH40010
(Small Signal, VDS = 28 V, IDQ = 500 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.914 -135.02 18.58 103.70 0.020 18.36 0.300 -126.80
600 MHz 0.909 -143.57 15.88 98.05 0.020 13.67 0.302 -133.51
700 MHz 0.906 -150.23 13.83 93.33 0.021 9.90 0.304 -138.40
800 MHz 0.904 -155.61 12.23 89.23 0.021 6.77 0.307 -142.08
900 MHz 0.903 -160.09 10.95 85.56 0.021 4.08 0.311 -144.94
1.0 GHz 0.902 -163.93 9.91 82.21 0.021 1.71 0.314 -147.23
1.1 GHz 0.901 -167.29 9.04 79.09 0.021 -0.41 0.319 -149.10
1.2 GHz 0.901 -170.29 8.31 76.15 0.021 -2.35 0.323 -150.69
1.3 GHz 0.900 -173.00 7.69 73.35 0.021 -4.12 0.328 -152.07
1.4 GHz 0.900 -175.50 7.15 70.66 0.021 -5.78 0.333 -153.29
1.5 GHz 0.900 -177.81 6.69 68.07 0.021 -7.32 0.338 -154.41
1.6 GHz 0.900 -179.98 6.27 65.54 0.021 -8.77 0.344 -155.44
1.7 GHz 0.900 177.96 5.91 63.08 0.020 -10.15 0.349 -156.43
1.8 GHz 0.899 176.00 5.59 60.67 0.020 -11.45 0.355 -157.38
1.9 GHz 0.899 174.12 5.30 58.30 0.020 -12.68 0.361 -158.30
2.0 GHz 0.899 172.31 5.04 55.97 0.020 -13.85 0.366 -159.22
2.1 GHz 0.899 170.54 4.80 53.67 0.020 -14.96 0.372 -160.14
2.2 GHz 0.900 168.83 4.58 51.40 0.020 -16.01 0.378 -161.06
2.3 GHz 0.900 167.15 4.39 49.16 0.019 -17.01 0.384 -161.99
2.4 GHz 0.900 165.49 4.21 46.94 0.019 -17.95 0.390 -162.93
2.5 GHz 0.900 163.87 4.04 44.73 0.019 -18.85 0.396 -163.88
2.6 GHz 0.900 162.26 3.89 42.54 0.019 -19.69 0.402 -164.86
2.7 GHz 0.900 160.66 3.75 40.37 0.019 -20.48 0.407 -165.85
2.8 GHz 0.900 159.08 3.62 38.21 0.019 -21.21 0.413 -166.86
2.9 GHz 0.900 157.51 3.50 36.05 0.018 -21.89 0.418 -167.89
3.0 GHz 0.900 155.93 3.39 33.91 0.018 -22.52 0.424 -168.95
3.2 GHz 0.900 152.79 3.18 29.65 0.018 -23.61 0.435 -171.12
3.4 GHz 0.900 149.64 3.00 25.40 0.017 -24.48 0.445 -173.38
3.6 GHz 0.900 146.45 2.85 21.17 0.017 -25.11 0.454 -175.73
3.8 GHz 0.900 143.23 2.71 16.93 0.017 -25.51 0.463 -178.17
4.0 GHz 0.900 139.94 2.58 12.69 0.017 -25.67 0.471 179.30
4.2 GHz 0.900 136.58 2.47 8.43 0.016 -25.60 0.479 176.67
4.4 GHz 0.899 133.14 2.38 4.15 0.016 -25.32 0.486 173.94
4.6 GHz 0.899 129.61 2.29 -0.17 0.016 -24.85 0.492 171.12
4.8 GHz 0.899 125.97 2.21 -4.53 0.016 -24.24 0.498 168.18
5.0 GHz 0.898 122.23 2.13 -8.94 0.016 -23.54 0.503 165.13
5.2 GHz 0.898 118.36 2.07 -13.41 0.016 -22.80 0.507 161.96
5.4 GHz 0.898 114.36 2.01 -17.95 0.017 -22.11 0.511 158.66
5.6 GHz 0.897 110.22 1.95 -22.56 0.017 -21.54 0.514 155.22
5.8 GHz 0.897 105.94 1.90 -27.26 0.018 -21.16 0.517 151.63
6.0 GHz 0.897 101.51 1.86 -32.04 0.019 -21.04 0.519 147.87
To download the s-parameters in s2p format, go to the CGH40010 Product Page and click on the documentation tab.
13 CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Dimensions CGH40010F (Package Type — 440166)
Product Dimensions CGH40010P (Package Type — 440196)
14 CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40010F GaN HEMT Each
CGH40010P GaN HEMT Each
CGH40010F-TB Test board without GaN HEMT Each
CGH40010F-AMP Test board with GaN HEMT installed Each
15 CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639