3–40 Motorola Thyristor Device Data
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and other light
industrial or consumer applications. Supplied in surface mount package for use in
automated manufacturing.
•Sensitive Gate Trigger Current in Four Trigger Modes
•Blocking Voltage to 600 Volts
•Glass Passivated Surface for Reliability and Uniformity
•Surface Mount Package
•Devices Supplied on 1 K Reel
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Blocking Voltage(1)
(1/2 Sine Wave, Gate Open, TJ = 25 to 110°C) MAC08BT1
MAC08DT1
MAC08MT1
VDRM
200
400
600
Volts
On-State Current RMS (TC = 80°C) IT(RMS) 0.8 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25°C)
I
TSM
10 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25°C)
ITSM
10
Amps
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s
Peak Gate Power (t < 2.0 µs) PGM 5.0 Watts
Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.1 Watts
Operating Junction Temperature Range TJ–40 to +110 °C
Storage Temperature Range Tstg –40 to +150 °C
Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum) TL260 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
R
θJA
156
°C/W
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
RθJA
156
°C/W
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
R
θJT
25
°C/W
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
RθJT
25
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
TRIAC
0.8 AMPERE RMS
200 thru 600 Volts
CASE 318E-04
(SOT-223)
STYLE 11
*Motorola preferred devices
REV 1
3–41
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Peak Repetitive Blocking Current
(VD = Rated VDRM Gate Open) TJ = 25°C
TJ = 110°C
IDRM —
——
—10
200 µA
µA
Maximum On-State Voltage (Either Direction)
(IT = 1.1 A Peak, TA = 25°C)
V
TM
— — 1.9 Volts
Maximum On-State Voltage (Either Direction)
(IT = 1.1 A Peak, TA = 25°C)
VTM
—
—
1.9
Volts
Gate Trigger Current (Continuous dc) All Quadrants
(VD = 7.0 Vdc, RL = 100 Ω)
I
GT
— — 10 mA
Gate Trigger Current (Continuous dc) All Quadrants
(VD = 7.0 Vdc, RL = 100 Ω)
IGT
—
—
10
mA
Holding Current (Either Direction)
(VD = 7.0 Vdc, Gate Open,
Initiating Current = 20 mA, Gate Open)
IH— — 5.0 mA
Gate Trigger Voltage (Continuous dc) All Quadrants
(VD = 7.0 Vdc, RL = 100 Ω)
V
GT
— — 2.0 Volts
Gate Trigger Voltage (Continuous dc) All Quadrants
(VD = 7.0 Vdc, RL = 100 Ω)
VGT
—
—
2.0
Volts
Critical Rate of Rise of Commutation Voltage
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS
On-State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150 Ω, See Figure 10)
dv/dtc1.5 — — V/µs
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)
dv/dt 10 — — V/
µs
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)
dv/dt
10
—
—
V/µs
Figure 1. PCB for Thermal Impedance and
Power Testing of SOT-223
0.079
2.0
0.079
2.0
0.059
1.5
0.091
2.3
0.091
2.3
0.472
12.0
0.096
2.44
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.984
25.0
0.244
6.2
0.059
1.5
0.059
1.5
0.096
2.44 0.096
2.44
0.059
1.5 0.059
1.5
0.15
3.8
ǒ
inches
mm
Ǔ
3–42 Motorola Thyristor Device Data
α =
CONDUCTION
ANGLE
TA, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)
°
110
100
90
80
60
50
70
IT(RMS), RMS ON-STATE CURRENT (AMPS)
110
100
90
80
60
50
40
30
20
70
TA, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)
°
Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
FOIL AREA (cm2)
θ
JA, JUNCTION TO AMBIENT THERMAL
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
10
1.0
0.1
0.01 5.04.03.02.0 30
60
70
80
90
160
2.00
110
0.50.30.20.10 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.70.60.20.10
0.50.40.30.20.10
1.00 4.0 6.0 8.0 10
100
90
80
60
50
40
30
20
0.6 0.7 0.8
RESISTANCE, C/W
°
150
140
130
120
110
40
50
100
4
12 3
MINIMUM
FOOTPRINT = 0.076 cm2
DEVICE MOUNTED ON
FIGURE 1 AREA = L2
PCB WITH TAB AREA
AS SHOWN
0.4
70
TA, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)
°
dc
30
°
60
°
α
= 180
°
dc
30
°
MINIMUM FOOTPRINT
50 OR 60 Hz
120
°
T(tab), MAXIMUM ALLOWABLE
TAB TEMPERATURE ( C)
°
110
105
100
95
90
85
80
IT(RMS), ON-STATE CURRENT (AMPS)
Figure 7. Current Derating
Reference: MT2 Tab
0.50.40.30.20.10 0.6 0.7 0.8
120
°
dc
30
°
120
°
R
L
L
90
°
120
°
90
°
60
°
30
°
90
°
TYPICAL AT TJ = 110
°
C
MAX AT TJ = 110
°
C
MAX AT TJ = 25
°
C
60
°
α
= 180
°
1.0 cm2 FOIL AREA
50 OR 60 Hz
α
= 180
°α
= 180
°
REFERENCE:
FIGURE 1
60
°
α
α
α
α
α =
CONDUCTION
ANGLE
α
α
α =
CONDUCTION
ANGLE
4.0 cm2 FOIL AREA
α
α
90
°α =
CONDUCTION
ANGLE
0.50.40.3
dc
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
TYPICAL
MAXIMUM
3–43
Motorola Thyristor Device Data
+
COMMUTATING dv/dt
dv/dt , (V/ S)
c
µ
P(AV), MAXIMUM AVERAGE
POWER DISSIPATION (WATTS)
1.0
0.8
0.7
0.5
0.4
0.2
0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 8. Power Dissipation
0.50.40.30.20.10 0.6 0.7 0.8
dc 90
°
120
°
10
1.0
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
t, TIME (SECONDS)
r(t), TRANSIENT THERMAL
0.01
1.0
0.0010.0001
1.0
0.01 0.1 10 100
10
RESISTANCE (NORMALIZED)
0.1
10
1.0
TJ, JUNCTION TEMPERATURE (
°
C)
90807060 100 110
VDRM = 200 V
400 Hz
300 Hz
0.9
0.6
0.3
0.1
1.0
CHARGE
CONTROL
TRIGGER CONTROL
75 VRMS,
ADJUST FOR
ITM, 60 Hz VAC
CHARGE 5
µ
F
NON-POLAR
CL
80 mHY
LLMEASURE I
1N914 51
2
1
RS56
0.047 CS
ADJUST FOR
dv/dt(c)
1N4007
200 V
G
110
°
VDRM
ITM
60 Hz
tw
30
°
TRIGGER
Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
COMMUTATING dv/dt
dv/dt , (V/ S)
c
µ
60
°
80
°
180 Hz
α
= 180
°
60
°
100
°
α
α
α =
CONDUCTION
ANGLE
Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board
Figure 10. Simplified Q1 (dv/dt)c Test Circuit
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
f
+
1
2tw(di
ń
dt)c
+
6f ITM
1000
–
3–44 Motorola Thyristor Device Data
STATIC dv/dt (V/ s)
60
20
RG, GATE – MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 13. Exponential Static dv/dt versus
Gate – Main Terminal 1 Resistance
10 10,000
HOLDING CURRENT (mA)
6.0
0
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 14. Typical Gate Trigger Current Variation
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 15. Typical Holding Current Variation
0.1
10
0–40
–40
20 100
I
1.0
V , GATE TRIGGER VOLTAGE (VOLTS)
1.1
0.3
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 16. Gate Trigger Voltage Variation
–40
µ
GT
MAIN TERMINAL #2
POSITIVE
600 Vpk
TJ = 110
°
C
IGT4
IGT1
MAIN TERMINAL #2
POSITIVE
50
40
30
1000100
5.0
4.0
3.0
2.0
1.0
IGT3
IGT2
GT, GATE TRIGGER CURRENT (mA)
I ,
H
–20 40 60 80
0 20 100–20 40 60 80 0 20 100–20 40 60 80
VGT2 VGT1
VGT3 VGT4
MAIN TERMINAL #1
POSITIVE
MAIN TERMINAL #1
POSITIVE
