TC74HC42AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC42AP, TC74HC42AF BCD to Decimal Decoder The TC74HC42A is a high speed CMOS BCD-to-DECIMAL DECODER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. A BCD code applied to the four inputs (A-D) sets a low level at one of ten decoded outputs. A illegal BCD code such as eleven thru fifteen sets all outputs high. This device can be used as 3-to-8 LINE DECODER when input D is held low. This device is useful for code conversion, address decoding, memory selection, multiplexing, or readout decoding. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC74HC42AP TC74HC42AF Features * High speed: tpd = 13 ns (typ.) at VCC = 5 V * Low power dissipation: ICC = 4 A (max) at Ta = 25C * High noise immunity: VNIH = VNIL = 28% VCC (min) * Output drive capability: 10 LSTTL loads * * Symmetrical output impedance: |IOH| = IOL = 4 mA (min) tpHL Balanced propagation delays: tpLH - * Wide operating voltage range: VCC (opr) = 2 to 6 V * Pin and function compatible with 74LS42 Weight DIP16-P-300-2.54A SOP16-P-300-1.27A : 1.00 g (typ.) : 0.18 g (typ.) Pin Assignment Start of commercial production 1987-11 1 2014-03-01 TC74HC42AP/AF IEC Logic Symbol Truth Table Code No. BCD Inputs Decimal Outputs Y0 Y1 L L H H H H H H H H H H H L H H H H H H H H L H H L H H H H H H H H H H H L H H H H H H L L H H H H L H H H H H L H H H H H H L H H H H H H L H H H H H H L H H H H H H H H H H H H H L H H D C B 0 L L L 1 L L L 2 L L H 3 L L H 4 L H 5 L H 6 L 7 L A Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 8 H L L L H H H H H H H H L H 9 H L L H H H H H H H H H H L H X H X H H H H H H H H H H H H X X H H H H H H H H H H X: Don't care System Diagram 2 2014-03-01 TC74HC42AP/AF Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range VCC -0.5 to 7 V DC input voltage VIN -0.5 to VCC + 0.5 V VOUT -0.5 to VCC + 0.5 V Input diode current IIK 20 mA Output diode current IOK 20 mA DC output current IOUT 25 mA DC VCC/ground current ICC 50 mA Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW Storage temperature Tstg -65 to 150 C DC output voltage Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = -40 to 65C. From Ta = 65 to 85C a derating factor of -10 mW/C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2 to 6 V Input voltage VIN 0 to VCC V VOUT 0 to VCC V Operating temperature Topr -40 to 85 C Input rise and fall time tr, tf Output voltage 0 to 1000 (VCC = 2.0 V) 0 to 500 (VCC = 4.5 V) ns 0 to 400 (VCC = 6.0 V) Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 3 2014-03-01 TC74HC42AP/AF Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage VCC (V) Min Typ. Max Min Max 2.0 1.50 1.50 4.5 3.15 3.15 6.0 4.20 4.20 2.0 0.50 0.50 4.5 1.35 1.35 6.0 1.80 1.80 2.0 1.9 2.0 1.9 4.5 4.4 4.5 4.4 6.0 5.9 6.0 5.9 IOH = -4 mA 4.5 4.18 4.31 4.13 IOH = -5.2 mA 6.0 5.68 5.80 5.63 2.0 0.0 0.1 0.1 4.5 0.0 0.1 0.1 6.0 0.0 0.1 0.1 IOL = 4 mA 4.5 0.17 0.26 0.33 IOL = 5.2 mA 6.0 0.18 0.26 0.33 VIH VIL IOH = -20 A High-level output voltage VOH VIN = VIH or VIL IOL = 20 A Low-level output voltage VOL Ta = -40 to 85C Ta = 25C Test Condition Symbol VIN = VIH or VIL Unit V V V V Input leakage current IIN VIN = VCC or GND 6.0 0.1 1.0 A Quiescent supply current ICC VIN = VCC or GND 6.0 4.0 40.0 A Test Condition Min Typ. Max Unit 4 8 ns 13 25 ns AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25C, input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time Symbol tTLH tTHL tpLH tpHL 4 2014-03-01 TC74HC42AP/AF AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time Symbol tTLH tTHL tpLH tpHL Input capacitance CIN Power dissipation capacitance CPD Note: (Note) Ta = -40 to 85C Ta = 25C Test Condition Unit VCC (V) Min Typ. Max Min Max 2.0 30 75 95 4.5 8 15 19 6.0 7 13 16 2.0 48 145 180 4.5 16 29 36 6.0 14 25 31 5 10 10 pF 68 pF ns ns CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPDVCCfIN + ICC 5 2014-03-01 TC74HC42AP/AF Package Dimensions Weight: 1.00 g (typ.) 6 2014-03-01 TC74HC42AP/AF Package Dimensions Weight: 0.18 g (typ.) 7 2014-03-01 TC74HC42AP/AF RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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