50A02MH-TL-E - ON Semiconductor

50A02MH

No.7488-1/7

Applications

• Low-frequency Ampliﬁ er, high-speed switching small motor drive, muting circuit

Features

• Large current capacity

• Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA]

• Small ON-resistance (Ron)

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --50 V

Collector-to-Emitter Voltage VCEO --50 V

Emitter-to-Base Voltage VEBO --5 V

Collector Current IC--500 mA

Collector Current (Pulse) ICP --1.0 A

Collector Dissipation PC

When mounted on ceramic substrate (600mm2×0.8mm)

600 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions

unit : mm (typ)

7019A-004

Ordering number : EN7488A

71 112 TKIM/O3103 TSIM TA-100701

SANYO Semiconductors

DATA SHEET

50A02MH

PNP Epitaxial Planar Silicon Transistor

Low-Frequency General-Purpose

Ampliﬁ er Applications

http://semicon.sanyo.com/en/network

Product & Package Information

• Package : MCPH3

• JEITA, JEDEC : SC-70, SOT-323

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL Marking

Electrical Connection

1 : Base

2 : Emitter

3 : Collector

SANYO : MCPH3

0.250.25

0.07

2.1

1.6

2.0

0.65 0.3

0.85

0.15

0 to 0.02

50A02MH-TL-E

LOT No.

50A02MH

No.7488-2/7

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Collector Cutoff Current ICBO VCB= --40V, IE=0A --100 nA

Emitter Cutoff Current IEBO VEB= --4V, IC=0A --100 nA

DC Current Gain hFE VCE= --2V, IC= --10mA 200 500

Gain-Bandwidth Product fTVCE= --10V, IC= --50mA 690 MHz

Output Capacitance Cob VCB= --10V, f=1MHz 3.8 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC= --100mA, IB= --10mA --60 --120 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC= --100mA, IB= --10mA --0.9 --1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC= --10μA, IE=0A --50 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE=∞ --50 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE= --10μA, IC=0A --5 V

Turn-ON Time ton See speciﬁ ed Test Circuit. 30 ns

Storage Time tstg 170 ns

Fall Time tf30 ns

Switching Time Test Circuit

Ordering Information

Device Package Shipping memo

50A02MH-TL-E MCPH3 3,000pcs./reel Pb Free

VRRB

VCC= --25VVBE=5V

50Ω

INPUT

OUTPU

220μF 470μF

PW=20μsIB1

D.C.≤1% IB2

IC=20IB1= --20IB2= --200mA

50A02MH

No.7488-3/7

Collector-to-Emitter Voltage, VCE -- mV

Collector Current, IC -- mA

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

DC Current Gain, hFE

--100

--50

IC -- VCE

IT05118 IT05119

--200

--150

--300

--250

--500

--450

--400

--350

--200 --600--400 --800 --1000

--100 --500--300 --700 --900 0

IC -- VBE

--0.2 --0.4 --0.6 --0.8 --1.0 --1.2

--200

--600

--500

--400

--300

--100

IB=0

Ta=75°C

25°C

--25°C

--200μA

--1mA

--500μA

--2mA

--5mA

--10mA

--15mA

--50mA

--30mA

--20mA

--25mA

VCE= --2V

--40mA

IT05120

100

hFE -- IC

--1.0 2357--10 23572357

--100 --1000

1000

Ta=75°C

25°C

--25°C

VCE= --2V

IT05410

--1.0 23 57

--10 23 57 23 57

--100

--10

Ta=75°C

--25°C

IC / IB=10 VCE(sat) -- IC

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

IT05122

--1.0

1.0

Cob -- VCB

--10

23572357--100

10 f=1MHz

IT05124

VCE(sat) -- IC

IT05125

VBE(sat) -- IC

--1.0 23 57

--10 23 57 23 57

--100 --1000

--1000

--100

--10

IC / IB=50

Ta=75°C

--25°C

25°C

--1.0

--1.0 23 57

--10 23 57 23 57

--100 --1000

Ta= --25

75°C

25°C

IC / IB=20

IT05123

VCE(sat) -- IC

--1.0 23 57

--10 23 57 23 57

--100 --1000

--1000

--100

--10

Ta=75°C

--25°C

IC / IB=20

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

50A02MH

No.7488-4/7

100

200

IT05046

300

600

400

500

700

4020 100 12060 80 140 160

Collector Dissipation, PC -- mW

Ambient Temperature, Ta -- °C

PC -- Ta

Mounted on a ceramic board(600mm2✕0.8mm)

Collector Current, IC -- mA

Gain-Bandwidth Product, fT -- MHz

IT05121

--1.0

fT -- IC

2 3 57 2 3 57 2 3 57

--10 --100 --1000

100

1000

VCE= --10V f=1MHz

--0.1

0.1

Base Current, IB -- mA

Ron -- IB

ON Resistance, Ron -- Ω

IT06093

1.0

100

32 57 32 57

--1.0 --10

OUT

IN 1kΩ

1kΩ

50A02MH

No.7488-5/7

Embossed Taping Speciﬁ cation

50A02MH-TL-E

50A02MH

No.7488-6/7

Outline Drawing Land Pattern Example

50A02MH-TL-E

Mass (g) Unit

0.007

* For reference

mm Unit: mm

0.65 0.65

0.4

2.1

0.6

50A02MH

PS No.7488-7/7

This catalog provides information as of July, 2012. Speciﬁ cations and information herein are subject

to change without notice.

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"standard application", intended for the use as general electronics equipment. The products mentioned herein

shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

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the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

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independent device, the customer should always evaluate and test devices mounted in the customer's

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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,

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