Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Advance
Information
Description
The SLD262EP is a multi-beam AlGaAs laser diode developed for Digital Plain-Papers Copiers.
Features
Four-beam array (beam interval: 14 µm)
Applications
Digital Plain-Papers Copiers
Recommended Operating Optical Power Output
6 mW
Connection Diagram/Pin Configuration
Multi-beam
AlGaAs Laser Diode
SLD262EP
20019PS
Absolute Maximum Ratings
(Tc = 25°C)
Optical power output Po 10 mW
Reverse voltage VRLD 2 V
PD 15 V
Operating temperature Topr –10 to +60 °C
Storage temperature Tstg –40 to +80 °C
Electrical and Optical Characteristics
(Tc = 25°C)
32
6Common
PD LD2
4
LD3
1
LD1
5
LD4
Bottom View
1. LD1 anode
2. LD2 anode
3. PD cathode
4. LD3 anode
5. LD4 anode
6. Common
5
42
1
6
3
Item
Threshold current
Differential efficiency
Operating current
Operating voltage
Wavelength
Radiation
angle
Positional
accuracy
Monitor current
Photodiode dark current
Symbol Conditions Min. Typ. Max. Unit
mA
mW/mA
mA
V
nm
deg
deg
deg
deg
mA
nA
24
0.9
38
2.5
800
35
11
±3
±2
0.7
200
18
0.7
27
1.8
788
31
9
—
—
0.45
—
5 mW/(I (6 mW) – (1 mW))
Po = 6 mW
Po = 6 mW
Po = 6 mW
Po = 6 mW
Po = 6 mW, VR = 4 V
VR = 4 V
Ith
η
Iop
Vop
λ
θ⊥
θ//
∆θ⊥
∆θ//
Im
Id
15
0.45
—
1.5
775
25
7
—
—
0.25
—
Relative difference
2
—
3
—
2
4
2
—
—
30%
—
Perpendicular to junction
Horizontal to junction
Angle