Advance Information Multi-beam AlGaAs Laser Diode SLD262EP Description The SLD262EP is a multi-beam AlGaAs laser diode developed for Digital Plain-Papers Copiers. Absolute Maximum Ratings Features Four-beam array (beam interval: 14 m) (Tc = 25C) Optical power output Reverse voltage Po 10 mW VR LD 2 V PD 15 V Operating temperature Topr -10 to +60 C Storage temperature Tstg -40 to +80 C Applications Digital Plain-Papers Copiers Recommended Operating Optical Power Output 6 mW Connection Diagram/Pin Configuration 6 Common 3 4 LD4 LD3 PD 5 4 3 2 LD2 LD1 2 1 5 1 6 1. LD1 anode 2. LD2 anode 3. PD cathode 4. LD3 anode 5. LD4 anode 6. Common Bottom View Electrical and Optical Characteristics Item Threshold current Differential efficiency Symbol Conditions Min. Typ. Max. Relative difference 5 mW/(I (6 mW) - (1 mW)) Unit 18 24 2 mA 0.45 0.7 0.9 -- mW/mA -- 27 38 3 mA 1.8 15 Ith (Tc = 25C) Operating current Iop Po = 6 mW Operating voltage Vop Po = 6 mW 1.5 2.5 -- V Po = 6 mW 775 788 800 2 nm Wavelength Radiation angle Positional accuracy Perpendicular to junction 25 31 35 4 deg Horizontal to junction // 7 9 11 2 deg -- -- 3 -- deg -- -- 2 -- deg 0.25 0.45 0.7 30% mA -- -- nA Angle Po = 6 mW // Monitor current Im Po = 6 mW, VR = 4 V Photodiode dark current Id VR = 4 V -- 200 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. 20019PS