V
RRM
= 45 V - 100 V
I
F(AV)
= 80 A
Features
• High Surge Capability D61-3M Package
• Not ESD Sensitive
Parameter Symbol FST8345M FST8360M Unit
Repetitive peak reverse voltage V
RRM
45 60 V
RMS reverse voltage V
RMS
32 42 V
DC blocking voltage
V
DC
45
60
V
• Types from 45 V to 100V V
RRM
Conditions
100
70
100
80
FST8345M thru FST83100M
FST83100M
80
56
FST8380M
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Power
Schottk
y
Diode
DC
blocking
voltage
V
DC
45
60
V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol FST8345M FST8360M Unit
Average forward current (per
pkg) I
F(AV)
80 80 A
Maximum instantaneous
forward voltage (per leg) 0.72 0.78
11
10 10
30 30
Thermal characteristics
Thermal resistance, junction -
case (per leg) R
ΘJC
1.10 1.10 °C/W
A
T
C
= 125 °C 80 80
Peak forward surge current (per
leg) I
FSM
t
p
= 8.3 ms, half sine 600 600 600 600
-55 to 150 -55 to 150
100
80
0.84 0.84
10
V
T
j
= 25 °C
I
FM
= 40 A, T
j
= 25 °C
Conditions
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
V
F
-55 to 150
FST83100MFST8380M
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
I
R
T
j
= 150 °C 30 30
mA
10
11
1.10
T
j
= 100 °C
1.10
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1
FST8345M thru FST83100M
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2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
FST8345M thru FST83100M
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