BF959ZL1G - ON Semiconductor

October, 2005 − Rev. 3 1Publication Order Number:

BF959/D

BF959

VHF Transistor

NPN Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 20 Vdc

Collector−Base Voltage VCBO 30 Vdc

Emitter−Base Voltage VEBO 3.0 Vdc

Collector Current − Continuous IC100 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient RqJA 200 °C/W

Thermal Resistance,

Junction−to−Case RqJC 83.3 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

BF959 TO−92

TO−92

CASE 29

STYLE 21

5000 Units/Box

BF959ZL1 TO−92 2000/Ammo Pack

COLLECTOR

BASE

EMITTER

BF959RL1 TO−92 2000/Tape & Ree

MARKING

DIAGRAM

959

AYWWG

http://onsemi.com

BF959G TO−92

(Pb−Free) 5000 Units/Box

BF959ZL1G TO−92

(Pb−Free) 2000/Ammo Pack

BF959RL1G TO−92

(Pb−Free) 2000/Tape & Ree

BF959 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

†

For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

BF959

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 − − Vdc

Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 30 − − Vdc

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 − − Vdc

Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO − − 100 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 5.0 mAdc, VCE = 10 Vdc)

(IC = 20 mAdc, VCE = 10 Vdc)

hFE 35

40 −

−−

−

Collector−Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) − − 1.0 Vdc

Base−Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) − − 1.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT700

600 −

−−

−

MHz

Common Emitter Feedback Capacitance

(VCB = 10 Vdc, Pf = 0, f = 10 MHz) Cre − 0.65 − pF

Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 W, f = 200 MHz) Nf− 3.0 − dB

BF959

http://onsemi.com

Figure 1. hFE at 10 V

IC, COLLECTOR CURRENT (mA)

200

500

1000

10 1

Figure 2. VCE(sat) at IC/IB = 10

IC, COLLECTOR CURRENT (mA)

10 20 30 502345

hFE, DC CURRENT GAIN

100

200

500

10 1102030502345

100

Figure 3. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.8

1.2

1.6

1.8

2.0

0.4 1

Figure 4. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10 20 30 502345

1.4

0.6

100 1 10 20 30 502 3 4 5 100

f, CURRENT−GAIN  BANDWIDTH PRODUCT (GHz)

C, CAPACITANCE (pF)

0.8

1.2

1.6

1.8

0.4

1.4

0.6

0.2

Figure 5. Input Impedance at 30 MHz

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.1 1

Figure 6. Output Impedance at 30 MHz

IC, COLLECTOR CURRENT (mA)

10 20 30 502345

0.4

0.2

100 1 10 20 30 502345

Y11e (ms)

100

300

500

200

Y22e ( s)μ

5 V

10 V

2 V

Cob

Cib

Cre

VCE = 10 V

g11e

b11e

VCE = 10 V

b22e

g22e

BF959

http://onsemi.com

PACKAGE DIMENSIONS

TO−92

TO−226AA

CASE 29−11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

STYLE 21:

PIN 1. COLLECTOR

2. EMITTER

3. BASE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

BF959/D

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