MRF282SR1 MRF282ZR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications
with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
multicarrier amplifier applications.
•Specified Two-Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts PEP
Power Gain — 10.5 dB
Efficiency — 28%
Intermodulation Distortion — - 31 dBc
•Specified Single- Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts CW
Power Gain — 9.5 dB
Efficiency — 35%
•Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts CW Output Power
Features
•Excellent Thermal Stability
•Characterized with Series Equivalent Large- Signal
Impedance Parameters
•RoHS Compliant
•Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS ±20 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD60
0.34
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 4.2 °C/W
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS — — 1.0 µAdc
Gate-Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS — — 1.0 µAdc
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF282
Rev. 15, 5/2006
Freescale Semiconductor
Technical Data
MRF282SR1
MRF282ZR1
2000 MHz, 10 W, 26 V
LATERAL N- CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B- 03, STYLE 1
NI-200S
MRF282SR1
CASE 458C- 03, STYLE 1
NI-200Z
MRF282ZR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 µAdc)
VGS(th) 2.0 3.0 4.0 Vdc
Drain-Source On - Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on) — 0.4 0.6 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 75 mAdc)
VGS(q) 3.0 4.0 5.0 Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss — 15 — pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss — 8.0 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss — 0.45 — pF
Functional Tests (In Freescale Test Fixture)
Common-Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps 10.5 11.5 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η28 — — %
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL — -14 -9 dB
Common-Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps 10.5 11.5 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η28 — — %
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL — -14 -9 dB
Common-Source Power Gain
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Gps 9.5 11.5 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
η35 40 — %
MRF282SR1 MRF282ZR1
3
RF Device Data
Freescale Semiconductor
Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic
Z11 0.636″ x 0.055″ Microstrip
Z12 0.303″ x 0.055″ Microstrip
Z13 0.463″ x 0.080″ Microstrip
Z14 0.105″ x 0.080″ Microstrip
Z15 0.452″ ±0.085″ x 0.080″ Microstrip
Z16 0.910″ ±0.085″ x 0.080″ Microstrip
Raw Board 0.030″ Glass Teflon, 2 oz Copper,
Material 3″ x 5″ Dimensions,
Arlon GX0300 -55 - 22, εr = 2.55
RF
INPUT
RF
OUTPUT
Z14
Z1 Z2 Z3 Z4 Z7 Z8 Z9 Z13
VGG
C3
C6
C1 C2
C4
R3
B2 C5 C11
B3
R5
C16
B4
C18
C17
C15
Z10
C12
DUT
+
+
VDD
Z5
C9
Z11
C14
Z15 Z16
Z12
C10 C13C8
Z6
C7
R4
R2
B1
R1
Z1 0.491″ x 0.080″ Microstrip
Z2 0.253″ x 0.080″ Microstrip
Z3 0.632″ x 0.080″ Microstrip
Z4 0.567″ x 0.080″ Microstrip
Z5 1.139″ x 0.055″ Microstrip
Z6 0.236″ x 0.055″ Microstrip
Z7 0.180″ x 0.325″ Microstrip
Z8 0.301″ x 0.325″ Microstrip
Z9 0.439″ x 0.325″ Microstrip
Z10 0.055″ x 0.325″ Microstrip
Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values
Designators Description
B1, B4 Surface Mount Ferrite Beads, 0.120″ x 0.333″ x 0.100″, Fair Rite #2743019446
B2, B3 Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
C1, C2, C9 0.8-8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL
C3 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
C4, C5, C13, C16 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C6 200 pF Chip Capacitor, ATC #100B201JCA500X
C7 18 pF Chip Capacitor, ATC #100B180KP500X
C8 39 pF Chip Capacitor, ATC #100B390JCA500X
C10 27 pF Chip Capacitor, ATC #100B270JCA500X
C11 1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
C12 0.6-4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
C14 0.5 pF Chip Capacitor, ATC #100B0R5BCA500X
C15 15 pF Chip Capacitor, ATC #100B150JCA500X
C17 0.1 pF Chip Capacitor, ATC #100B0R1BCA500X
C18 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394
R1 560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
R2, R5 12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
R3, R4 91 W, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B910JT
WS1, WS2 Beryllium Copper Wear Blocks 0.010″ x 0.235″ x 0.135″ NOM
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type “N” Jack Connectors, Omni -Spectra # 3052- 1648 - 10
4-40 Ph Head Screws, 0.125″ Long
4-40 Ph Head Screws, 0.188″ Long
4-40 Ph Head Screws, 0.312″ Long
4-40 Ph Rec. Hd. Screws, 0.438″ Long
RF Circuit Board 3″ x 5″ Copper Clad PCB, Glass Teflon
4
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
MRF282
Rev-0
C16
C15
C6
C1
R1
R2
R3
C11
C8
C14
C13
C9
R4
R5
C3
C4 C7
C2
C12
C5
C10
C17
C18
WS1
B1
B3
B4
B2
WS2
Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF282SR1 MRF282ZR1
5
RF Device Data
Freescale Semiconductor
RF
INPUT Z10
Z1 Z2 Z3 Z4 Z5 Z6 Z7
Z9
VGG VDD
C1
C6
C2 C3
L4
L1
C9
R1
B1 C4
R2
B2 C7
R3
B3
C17
C15
Z8
C12
DUT
+
C5 C8
L2 L3 L5
Z11
C16
R6
B6
C13
R5
B4
C10
R4
B5 +
C11C14
Figure 3. 1810 - 1880 MHz Broadband Test Circuit Schematic
Z8 0.414″ x 0.330″ Microstrip
Z9 0.392″ x 0.08″ Microstrip
Z10 0.070″ x 0.08″ Microstrip
Z11 1.110″ x 0.08″ Microstrip
Raw Board 0.030″ Glass Teflon, 2 oz Copper,
Material 3″ x 5″ Dimensions,
Arlon GX0300 -55 - 22, εr = 2.55
RF
OUTPUT
Z1 0.122″ x 0.08″ Microstrip
Z2 0.650″ x 0.08″ Microstrip
Z3 0.160″ x 0.08″ Microstrip
Z4 0.030″ x 0.08″ Microstrip
Z5 0.045″ x 0.08″ Microstrip
Z6 0.291″ x 0.08″ Microstrip
Z7 0.483″ x 0.330″ Microstrip
Table 5. 1810 - 1880 MHz Broadband Test Circuit Component Designations and Values
Designators Description
B1, B2, B3, B4, B5, B6 Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
C1, C16 470 µF, 63 V Electrolytic Capacitors, Mallory #SME63UB471M12X25L
C2, C9, C12, C17 0.6-4.5 pF Variable Capacitors, Johanson Gigatrim #27271SL
C3 0.8-8.0 pF Variable Capacitor, Johanson Gigatrim #27291SL
C4, C13 0.1 µF Chip Capacitors, Kemet #CDR33BX104AKWS
C5, C14 100 pF Chip Capacitors, ATC #100B101JCA500X
C6, C8, C11, C15 12 pF Chip Capacitors, ATC #100B120JCA500X
C7, C10 1000 pF Chip Capacitors, ATC #100B102JCA50X
L1 3 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.053″ Long, 6.0 nH
L2 5 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.091″ Long, 15 nH
L3, L4 9 Turns, 26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH
L5 4 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.078″ Long, 10 nH
R1, R2, R3 12 Ω, 1/8 W Fixed Film Chip Resistors, Garrett Instruments #RM73B2B120JT
R4, R5, R6 0.08″ x 0.13″Resistors, Garrett Instruments #RM73B2B120JT
W1, W2 Beryllium Copper 0.010″x 0.110″x 0.210″
6
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
Z7 0.408″ x 0.08″ Microstrip
Z8 0.990″ x 0.08″ Microstrip
Z9 0.295″ x 0.08″ Microstrip
Raw Board 0.030″ Glass Teflon, 2 oz Copper,
Material 3″ x 5″ Dimensions,
Arlon GX0300 -55 - 22, εr = 2.55
Figure 4. Class A Broadband Test Circuit Schematic
RF
INPUT
RF
OUTPUT
DUT Z9
Z1 Z2 Z3 Z4
Z5 Z6 Z8
VSUPPLY
VDD
Q1
Q2
C2 C4
L1
C7
C3 C10
C13
C14
L2
C19
C18 C20
C15
R1
B1
R8
VDD
C5 C6 C8 C9 R9
B2
R10
B3
C16
C11
Z7
C12
C17
C1
R2
R3
R4
R5
R6
R7 +
+
+
Z1 0.624″ x 0.08″ Microstrip
Z2 0.725″ x 0.08″ Microstrip
Z3 0.455″ x 0.08″ Microstrip
Z4 0.530″ x 0.330″ Microstrip
Z5 0.280″ x 0.330″ Microstrip
Z6 0.212″ x 0.330″ Microstrip
Table 6. Class A Broadband Test Circuit Component Designations and Values
Designators Description
B1, B2, B3 Ferrite Beads, Ferroxcube #56-590 - 65-3B
C1, C20 470 µF, 63 V Electrolytic Capacitors, Mallory #SME63V471M12X25L
C2 0.01 µF Chip Capacitor, ATC #100B103JCA50X
C3, C10, C15 0.6-4.5 pF Variable Capacitors, Johanson #27271SL
C4, C16 0.02 µF Chip Capacitors, ATC #100B203JCA50X
C5 100 µF, 50 V Electrolytic Capacitor, Mallory #SME50VB101M12X256
C6, C7, C9, C14, C17 12 pF Chip Capacitors, ATC #100B120JCA500X
C8, C13 51 pF Chip Capacitors, ATC #100B510JCA500X
C11, C12 0.3 pF Chip Capacitors, ATC #100B0R3CCA500X
C18 0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS
C19 0.4-2.5 pF Variable Capacitor, Johanson #27285
L1 8 Turns, 0.042″ ID, 24 AWG, Enamel
L2 9 Turns, 0.046″ ID, 26 AWG, Enamel
Q1 NPN, 15 W, Bipolar Transistor, MJD310
Q2 PNP, 15 W, Bipolar Transistor, MJD320
R1 200 Ω, 1/4 W Axial Resistor
R2 1.0 kΩ, 1/2 W Potentiometer, Bourns
R3 13 kΩ, 1/4 W Axial Resistor
R4, R6, R7 390 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B391JT
R5 1.0 Ω, 10 W 1% Resistor, Dale #RE65G1R00
R8, R9, R10 12 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B120JT
Input/Output Type N Flange Mount RF55 -22 Connectors, Omni- Spectra
MRF282SR1 MRF282ZR1
7
RF Device Data
Freescale Semiconductor
Figure 5. Series Equivalent Input and Output Impedence
f
MHz
Zin
Ω
ZOL*
Ω
1800
1860
1900
1960
2.1 + j1.0
2.0 + j1.2
2.05 + j1.15
1.9 + j1.4
3.8 - j0.15
3.77 - j0.13
3.75 - j0.1
3.65 + j0.1
Zin = Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at given output power, voltage, IMD,
bias current and frequency.
VDD = 26 V, IDQ = 75 mA, Pout = 10 W (PEP)
ZOL*
Zin
Zo = 5 Ω
f = 1800 MHz
2000 1.85 + j1.6 3.55 + j0.2
Zin ZOL
*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
f = 1800 MHz
f = 2000 MHz
f = 2000 MHz
8
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
NOTES
MRF282SR1 MRF282ZR1
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
NOTES
MRF282SR1 MRF282ZR1
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 458B-03
ISSUE E
NI-200S
MRF282SR1
C
F
E
H
K
2X
1
2
3
NOTES:
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT
CENTERLINE UNLESS OTHERWISE NOTED.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
D2X
Z4X
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.180 0.190 4.572 4.83
INCHES
B0.140 0.150 3.556 3.81
C0.082 0.116 2.083 2.946
D0.047 0.053 1.194 1.346
E0.004 0.010 0.102 0.254
F0.004 0.006 0.102 0.152
H0.025 0.031 0.635 0.787
K0.060 0.110 1.524 2.794
M0.197 0.203 5.004 5.156
N0.177 0.183 4.496 4.648
R0.147 0.153 3.734 3.886
S0.157 0.163 3.988 4.14
Z−−− 0.020 −−− 0.508
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
M
A
M
bbb B M
T
M
A
M
ccc B M
T
M
A
M
ccc B M
T
R(LID)
S(INSULATOR)
SEATING
PLANE
T
M
A
M
ccc B M
T
N
(LID)
AA
(FLANGE)
M
(INSULATOR)
M
A
M
ccc B M
T
B
B
(FLANGE)
CASE 458C-03
ISSUE E
NI-200Z
MRF282ZR1
C
E
K2X
1
2
3
NOTES:
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H (PACKAGE COPLANARITY): THE
BOTTOM OF LEADS AND REFERENCE PLANE T
MUST BE COPLANAR WITHIN DIMENSION H.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
D2X
Z4X
Y
F
H
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.180 0.190 4.572 4.830
INCHES
B0.140 0.150 3.556 3.810
C0.082 0.116 2.083 2.946
D0.047 0.053 1.194 1.346
E0.004 0.010 0.102 0.254
H0.000 0.004 0.000 0.102
F0.004 0.006 0.102 0.152
K0.050 0.090 1.270 2.286
M0.197 0.203 5.004 5.156
N0.177 0.183 4.496 4.648
R0.147 0.153 3.734 3.886
S0.157 0.163 3.988 4.140
Z−−− R .020 −−− R .508
M
A
M
bbb B M
T
M
A
M
ccc B M
T
M
A
M
ccc B M
T
R(LID)
S(INSULATOR) B
(FLANGE)
M
A
M
ccc B M
T
N
(LID)
SEATING
PLANE
T
AA
(FLANGE)
M
(INSULATOR)
M
A
M
ccc B M
T
B
Y0.020 0.040 0.508 1.016
bbb .010 REF 0.254 REF
ccc .015 REF 0.381 REF
12
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
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Document Number: MRF282
Rev. 15, 5/2006
