DATA SH EET
Product specification April 1995
DISCRETE SEMICONDUCTORS
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
April 1995 2
NXP Semiconductors Product specification
N-channel FETs PMBF4391;
PMBF4392; PMBF4393
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-e ffect
transistors on a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for low-power
chopper or switc hing applications in
industry.
PINNING
Note
1. Drain and source are
interchangeable.
Marking code
1 = drain
2 = source
3=gate
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
gd
s
3
Top view
MAM385
QUICK REFERENCE DATA
PMBF4391 PMBF4392 PMBF4393
Drain-source voltage VDS max. 40 40 40 V
Drain curr en t
VDS =20 V; V
GS =0 I
DSS 50 25 5 mA
Gate-sourc e cut-off voltage
VDS =20 V; I
D=1 nA V(P)GS 420.5V
10 5 3 V
Drain-source res istance (on) at f = 1 kHz
ID=0; V
GS =0 R
ds on 30 60 100
Feedback capacitance at f = 1 MHz
VGS = 12 V; VDS =0 C
rs 3.5 3.5 3.5 pF
Turn-off time
VDD =10 V; V
GS =0
ID=12 mA; VGSM = 12 V toff 20 ns
ID= 6 mA; VGSM = 7 V toff 35 ns
ID= 3 mA; VGSM = 5 V toff 50 ns
April 1995 3
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESIST ANCE
CHARACTERISTICS
Tj=25 C unless otherwise specified
Drain-source voltage VDS max. 40 V
Drain-gate voltage VDGO max. 40 V
Gate-source voltage VGSO max. 40 V
Gate current (DC) IGmax. 50 mA
Tot al po we r dissipat ion up to T amb =40 C (1) Ptot max. 250 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tjmax. 150 C
From junction to ambient(1) Rth j-a =430K/W
Gate-source voltage
IG= 1 mA; VDS = 0 VGSon 1V
Gate-sourc e cut-off current
VDS =0 V; VGS =20 V IGSS 0.1 nA
VDS =0 V; VGS =20 V; T
amb =150 CIGSS 0.2 A
PMBF4391 PMBF4392 PMBF4393
Drain curr en t
VDS = 20 V; VGS =0 IDSS
50
150 25
75 5
30 mA
mA
Gate-sourc e breakdown vo ltage
IG=1A; VDS =0 V(BR)GSS 40 40 40 V
Gate-sourc e cut-off voltage
ID= 1 nA; VDS = 20 V V(P)GS
4
10 2
50.5
3V
V
Drain-source voltage (on)
ID=12 mA; V
GS =0 V
DSon 0.4  V
ID= 6 mA; VGS =0 V
DSon 0.4 V
ID= 3 mA; VGS =0 V
DSon  0.4 V
Drain-source resistance (on)
ID=0; V
GS = 0; f = 1 kHz; Tamb =25 Cr
ds on 30 100
Drain cut-off curr ent
VGS =12 V V
DS = 20 V IDSX 0.1  nA
VGS =7 V I
DSX  0.1 nA
VGS =5 V I
DSX  0.1 nA
VGS =12 V V
DS = 20 V; Tamb = 150 CI
DSX 0.2  A
VGS =7 V I
DSX  0.2 A
VGS =5 V I
DSX  0.2 A
April 1995 4
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
Note
1. Mounted on a ceramic subs trate of 8 mm 10 mm 0,7 mm.
y-parameters (common source)
VDS =20 V; V
GS = 0; f = 1 MH z; Tamb =25 CPMBF4391 PMBF4392 PMBF4393
Input capacitance Cis 14 14 14 pF
Feedback capacitance
VGS =12 V ; V
DS =0 C
rs 3.5  pF
VGS =7 V ;V
DS =0 C
rs  3.5 pF
VGS =5 V ;V
DS =0 C
rs  3.5 pF
Switching times
VDD =10 V ; V
DS =0
Conditions IDand VGSoff ID=12 6 3 mA
VGS off =12 7 5 V
RL= 750 1550 3150
Rise time tr555ns
Turn on time ton 15 15 15 ns
Fall time tf15 20 30 ns
Turn off time toff 20 35 50 ns
Fig.2 Switching times waveforms.
handbook, full pagewidth
MBK288
VGS off toff
tf
VGS = 0 V
Vi
Vo
10%
90%
90%
10%
ton
tr
April 1995 5
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
Pulse generator:
Fig.3 Test circuit.
handbook, halfpage
MBK289
50 Ω
RL
DUT
10 μF
1 μF
VDD 10 nF
50 Ω
SAMPLING
SCOPE
50 Ω
tr0.5 ns
tf0.5 ns
tp=100s
=0.01
Oscilloscope:
Ri=50
Fig.4 Power derating curve.
handbook, halfpage
0Tamb (°C)
Ptot
(mW)
300
200
100
040 200
80 120 160
MDA245
April 1995 6
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
April 1995 7
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
DATA SHEET STATUS
Notes
1. Please cons ult the most recently issued do cument before initiating or completin g a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agre ed between NXP
Semiconductors and its custo m er, unless NXP
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However, NXP Semiconduc tors does not give any
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shall have no liability for the consequences of use of such
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Applications Applications that are described herein for
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NXP Semiconductors makes no representation or
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Customers are responsible for the design and operation of
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associated with their ap plications and products.
April 1995 8
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
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respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any othe r
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/9 Date of release: April 1995