1
Trigger Devices
MA2B001
Silicon planar type trigger device
Thyristor TRIAC trigger circuit
■Features
•Satisfactory symmetry of VBO
•Large VO and small IBO
■Absolute Maximum Ratings Ta = 25°C
Unit : mm
DO-35 Package
Parameter Symbol Rating Unit
Average total power dissipation
P(AV) 150 mW
Peak current*1IPM 2.0 A
Operating ambient temperature
*2Topr 100 °C
Storage temperature Tstg −55 to +125 °C
Note) *1:T
a < 50°C, t = 10 µs, repetitive frequency 60 Hz
*2: Maximum ambient temperature during operation
Parameter Symbol Conditions Min Typ Max Unit
Breakover current IBO V = VBO 50 µA
Breakover voltage*1VBO I = IBO 28 36 V
Output voltage*1VO4.0 7.0 V
Temperature coefficient of T.C.(VBO) 0.1 %/°C
breakover voltage
Breakover voltage deviation*2∆VBO 3.5 V
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Rated input/output frequency: 100 MHz
2. *1: Measurement of VBO and VO*2: Symmetry of VBO
φ 0.56 max.
φ 1.95 max.
24 min.
Color indication (Green)
24 min. 4.5 max.
V
O
V
BO
V
BO'
V
BO
0.068 µF
100 V
rms
30 kΩ70 kΩ
20 Ω
Amp.
Trigger Devices
2
MA2B001
VBO TaIBO VBO
VO Ta
0
10
20
30
40
50
45
35
25
15
5
02040 8060 140120100 160
Ambient temperature Ta (°C)
Breakover voltage VBO (V)
0
0 40 120 1601401006020 80
2
4
6
8
10
12
14
16
Ambient temperature Ta (°C)
Output voltage V
O
(V)
400
400
200
200
800
800
1 000
1 000
600
600
0
010 4010 302040 30 20
Breakover voltage VBO (V)
Breakover current IBO (µA)
T
a
= 25°C
VO RL
0
0.01
0.05 0.1
0.5 1 5 10
14
12
10
6
8
4
2
Load resistance RL (kΩ)
Output voltage VO (V)
Ta = 25°C
