For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 14
HMC311SC70 / 311SC70E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
v02.1108
General Description
Features
Functional Diagram
The HMC311SC70(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 8 GHz ampli er. Packaged in an industry
standard SC70, the ampli er can be used as either
a cascadable 50 Ohm gain stage or to drive the LO
port of HMC mixers with up to +15 dBm output power.
The HMC311SC70(E) offers 15 dB of gain and an
output IP3 of +30 dBm while requiring only 54 mA
from a +5V supply. The Darlington topology results in
reduced sensitivity to normal process variations, and
yields excellent gain stability over temperature while
requiring a minimal number of external bias
components.
P1dB Output Power: +15 dBm
Output IP3: +30 dBm
Gain: 15 dB
Cascadable, 50 Ohm I/O’s
Single Supply: +5V
Industry Standard SC70 Package
Typical Applications
The HMC311SC70(E) is ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio & Test Equipment
Electrical Speci cations, Vs= 5V, Rbias= 22 Ohm, TA = +25° C
Parameter Min. Typ. Max. Units
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
14.0
13.0
12.5
11.0
15.0
15.0
14.5
13.0
dB
dB
dB
dB
Gain Variation Over Temperature
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
0.004
0.007
0.012
0.018
0.007
0.012
0.016
0.022
dB/ °C
dB/ °C
dB/ °C
Return Loss Input / Output DC - 8.0 GHz 15 dB
Reverse Isolation DC - 8.0 GHz 18 dB
Output Power for 1 dB Compression (P1dB)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
13.5
12.0
10.0
8.0
15.5
15.0
13.0
11.0
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
DC - 2.0 GHz
2.0 - 6.0 GHz
6.0 - 8.0 GHz
30
27
24
dBm
dBm
dBm
Noise Figure DC - 8.0 GHz 5 dB
Supply Current (Icq) 55 74 mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
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Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
012345678910
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
012345678910
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
012345678910
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
012345678910
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
20
012345678
+25C
-40C
+85C
GAIN (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
12345678910
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC311SC70 / 311SC70E
v02.1108 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 16
Power Compression @ 6 GHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Power Compression @ 1 GHz
Gain, Power, IP3 & Supply Current vs.
Supply Voltage @ 1 GHz
4
6
8
10
12
14
16
18
012345678910
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
012345678910
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
-4
-2
0
2
4
6
8
10
12
14
16
18
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-4
-2
0
2
4
6
8
10
12
14
16
18
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
10
12
14
16
18
20
22
24
26
28
30
32
34
012345678
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
0
20
40
60
80
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
IP3
Icq
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Icq (mA)
Vs (Vdc)
HMC311SC70 / 311SC70E
v02.1108 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 17
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +7V
RF Input Power (RFIN)(Vcc = +3.9V) +10 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C) 0.34 W
Thermal Resistance
(junction to lead) 191 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Part Number Package Body Material Lead Finish MSL Rating Package Marking
HMC311SC70 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 311
HMC311SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 311
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
HMC311SC70 / 311SC70E
v02.1108 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 18
Application Circuit
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 4, 5 GND These pins must be connected to RF/DC ground.
3RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
6RFOUT RF output and DC Bias for the output stage.
Recommended Component Values
Component
Frequency (MHz)
50 900 1900 2200 2400 3500 5200 5800
L1 270 nH 56 nH 22 nH 22 nH 15 nH 8.2 nH 3.3 nH 3.3 nH
C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias
> 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.8
Rbias
HMC311SC70 / 311SC70E
v02.1108 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 19
Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown. A sufficient
number of via holes should be used to connect
the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
List of Materials for Evaluation PCB 118040 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1 - C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0603 Pkg.
C5 2.2 μF Capacitor, Tantalum
R1 22 Ohm Resistor, 1210 Pkg.
L1 22 nH Inductor, 0603 Pkg.
U1 HMC311SC70 / HMC311SC70E
PCB [2] 117360 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC311SC70 / 311SC70E
v02.1108 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
