© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/12/17
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection - LC03-3.3 Series
SP03A-3.3
Absolute Maximum Ratings
Parameter Rating Units
Peak Pulse Current (8/20µs) 150 A
Peak Pulse Power (8/20µs) 3300 W
IEC 61000-4-2, Direct Discharge, (Level 4) 30 kV
IEC 61000-4-2, Air Discharge, (Level 4) 30 kV
IEC 61000-4-5 (8/20µs) 150 A
Telcordia GR 1089 (Intra-Building) (2/10µs) 100 A
ITU K.20 (5/310µs) 40 A
Electrical Characteristics (TOP = 25°C)
Thermal Information
Parameter Rating Units
SOIC Package 170 °C/W
Operating Temperature Range –40 to 125 °C
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)
260 °C
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Stand-Off Voltage VRWM IT≤1µA - - 3.3 V
Reverse Breakdown Voltage VBR IT= 2µA 3.3 - - V
Snap Back Voltage VSB IT= 50mA 3.3 - - V
Reverse Leakage Current IRVRWM= 3.3V, T= 25°C - - 1 µA
Clamping Voltage, Line-Ground VCIPP= 50A, tp=8/20 µs - - 13 V
Clamping Voltage, Line-Ground VCIPP= 100A, tp=8/20 µs - - 17 V
Dynamic Resistance, Line-Ground RDYN (VC2-VC1)/(IPP2-IPP1) - 0.15 - W
Clamping Voltage, Line-Line VCIPP= 50A, tp=8/20 µs - - 15 V
Clamping Voltage, Line-Line VCIPP= 100A, tp=8/20 µs - - 20 V
Dynamic Resistance , Line-Line RDYN (VC2-VC1)/(IPP2-IPP1) - 0.25 - W
Junction Capacitance Cj
Between I/O Pins and Ground
VR=0V, f= 1MHz - 9 12 pF
Between I/O Pins
VR=0V, f= 1MHz - 4.5 6 pF
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Figure 2: Current Derating Curve
Figure 1: Non-repetitive Peak Pulse Current vs. Pulse Time