Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Typ Max
65 90
85 125
RθJL 43 60
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State °C/W
±12Gate-Source Voltage
Drain-Source Voltage 30
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
4.9
30
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.4
1
-55 to 150
TA=70°C
ID
5.8
AO3400
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 5.8 A (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 33mΩ (VGS = 4.5V)
RDS(ON) < 52mΩ (VGS = 2.5V)
General Description
The AO3400 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400 is Pb-free
(meets ROHS & Sony 259 specifications). AO3400L
is a Green Product ordering option. AO3400 and
AO3400L are electrically identical.
G
D
S
S
GD
TO-236
(SOT-23)
To
p
Vie
w
Alpha & Omega Semiconductor, Ltd.
AO3400
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 0.7 1.1 1.4 V
ID(ON) 30 A
22.8 28
TJ=125°C 32 39
27.3 33 mΩ
43.3 52 mΩ
gFS 10 15 S
VSD 0.71 1 V
IS2.5 A
Ciss 823 1030 pF
Coss 99 pF
Crss 77 pF
Rg1.2 3.6 Ω
Qg9.7 12 nC
Qgs 1.6 nC
Qgd 3.1 nC
tD(on) 3.3 5 ns
tr4.8 7 ns
tD(off) 26.3 40 ns
tf4.1 6 ns
trr 16 20 ns
Qrr 8.9 12 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
IF=5A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=5.8A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=3Ω
mΩ
VGS=4.5V, ID=5A
IS=1A,VGS=0V
VDS=5V, ID=5A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=2.5V, ID=4A
VGS=4.5V, VDS=5V
VGS=10V, ID=5.8A
Reverse Transfer Capacitance
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : June 2005
Alpha & Omega Semiconductor, Ltd.
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=2V
2.5V
3V
4.5V
10V
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
10
20
30
40
50
60
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°
C
125°
C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Norm alized On -Resi stan ce
VGS=2.5V
VGS=10V
VGS=4.5V
10
20
30
40
50
60
70
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°
C
VDS=5V
VGS=2.5V
V
GS
=4.5V
V
GS
=10
V
ID=5A
25°
C
125°C
Alpha & Omega Semiconductor, Ltd.
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
1
2
3
4
5
024681012
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Vo lts)
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitan ce (p F )
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized T ran sient
Thermal Resistance
Coss Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0
.1
s
1
s
10s
D
C
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
T
o
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.