2SK3857MFV
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3857MFV
For ECM
• Application for Ultra-compact ECM
Absolute Maximum Ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Gate-Drain voltage VGDO -20 V
Gate Current IG 10 mA
Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW
Junction Temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliabilit y upon reviewing the T oshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on FR4 board
IDSS CLASSIFICATION
A-Rank 140~240µA
B-Rank 210~350µA
Marking Equivalent Circuit
Unit: mm
JEDEC -
JEITA -
TOSHIBA 2-1L1C
Weight: 1.5mg (typ.)
VESM 1.Drain
2.Source
3.Gate
D
G
S
IDSS Classification Symbol
A
:
A
- Rank
B :B - Rank
Type Name
9
1.2±0.05
0.32±0.05
1
2
3
0.40.4 0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
0.5mm
0.45mm
0.45mm
0.4mm
2SK3857MFV
2007-11-01
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Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain Current IDSS V
DS = 2 V, VGS = 0 140 ⎯ 350 µA
Drain Current ID V
DD = 2 V, RL= 2.2kΩ,Cg = 5pF ⎯ ⎯ 370 µA
Gate-Source Cut-off Voltage VGS(OFF) V
DS = 2 V, ID = 1μA -0.1 ⎯ -1.0 V
Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.9 1.3 ⎯ mS
Gate-Drain Voltage V(BR)GDO IG=-10μA -20 ⎯ ⎯ V
Input capacitance Ciss V
DS = 2 V, VGS = 0, f = 1 MHz ⎯ 3.5 ⎯ pF
Voltage Gain Gv VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV -3.0 -0.5 ⎯ dB
Delta Voltage Gain DGv(f) VDD = 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV ⎯ 0 -1 dB
Delta Voltage Gain DGv(V) VDD = 2V to 1.5V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz, vin=100mV ⎯ -0.8 -2 dB
Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 10pF,Gv=80dB, A-Curve Filter ⎯ 25 55 mV
Total Harmonic Distortion THD VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz, vin=50mV ⎯ 0.7 ⎯ %
Time Output Stability tos VDD = 2V, RL= 2.2kΩ,Cg = 5pF ⎯ 100 200 ms
Time Output Stability Test Method
a) TEST CIRCUIT b) TEST SIGNAL
VDD=2.0V
5pF
2.2kΩ
Vout
tos
90%
VDD-ID*RL
50%
2V
0V
VDD
0V
Vout
2SK3857MFV
2007-11-01
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IDSS=150μA
IDSS=330μA
Ta=85℃
Ta=25℃
Ta=-40℃
Gate - Source voltage VGS (V)
ID – VGS
Drain Current ID (µA)
Drain Current IDSS (µA)
|Yfs| – IDSS
Forward transfer admittance
|Y
fs| (mS)
0
3
1
2
400 500
Gate-Source Cut-off Voltage
VGS(OFF) (V )
Drain Current IDSS (µA)
VGS(OFF) – IDSS
Gate - Source voltage VGS (V)
ID – VGS
Drain Current ID (µA)
0
600
-1.0 -0.8 -0.6 -0.4 -0.2
300
100
200
0
400
500
VDS=2V
Common Source
Ta = 25 °C
0
600
-1.0 -0.8 -0.6 -0.4 -0.2
300
100
200
0
400
500
VDS=2V
Common Source
100 200 300 600
|Yfs|:VDS=2V
VGS=0V
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25 °C
400 500 0
0
-100
-200
-300
-400
100 200 300 600 400 500
VGS(OFF):VDS=2V
ID = 1μA
IDSS:VDS=2V
VGS=0V
Common Source
Ta = 25 °C
-500
Drain - Source voltage VDS (V)
ID – VDS
Drain Current ID (µA)
0
600
0
300
100
200
2.0
400
500
1.0
Common Source
Ta = 25 °C
IDSS=170μA
VGS = 0 V
– 0.05 V
+ 0.1 V
+ 0.05 V
– 0.1 V
Drain - Source voltage VDS (V)
ID – VDS
Drain Current ID (µA)
0
600
0
300
100
200
2.0
400
500
1.0
Common Source
Ta = 25 °C IDSS=330μA
VGS = 0 V
– 0.05 V
+ 0.1 V
+ 0.05 V
– 0.1 V
2SK3857MFV
2007-11-01
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Drain Current IDSS (µA)
VN – IDSS
Noise Voltage VN (mV)
Drain Current IDSS (µA)
DGv(V)– IDSS
Delta Voltage Gain DGv(V) (dB)
Voltage Gain Gv (dB)
Drain Current IDSS (µA)
Gv– IDSS
Drain - Source voltage VDS (V)
Ciss – VDS
Input capacitance Ciss (pF)
11 10
10
5
5
VGS=0V
f=1kHz
Common Source
Ta = 25°C
0
– 2
1
0
–3
100 200 300 600 400 500
Gv:VDD=2V
Cg=5pF
RL= 2.2kΩ,
f=1kHz
vin=100mV
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C 0
-1.0
-1.5
-2.5
0
-0.5
-2.0
-3.0
100 200 300 600 400 500
DGv:VDD=2V to 1.5V
Cg=5pF
RL= 2.2kΩ,
f=1kHz
vin=100mV
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
Electret Capacitance Cg (pF)
Gv – Cg
Voltage Gain Gv (dB)
0 2 4 6 8 10
-20
10
-5
-15
-10
0
5
VDD=2V
Cg=5pF
RL= 2.2kΩ,
f=1kHz
vin=100mV
Common Source
Ta = 25°C
IDSS=350μA
IDSS=170μA
0
60
30
10
20
40
50
0 100 200 300 600 400 500
VN:VDD=2V
Cg=10pF
RL= 1kΩ
f=1kHz
80dB AMP
A-Curve Filter
IDSS: VDS=2V
VGS=0V
Drain Current IDSS (µA)
THD– IDSS
Total Harmonic Distortion
THD (%)
0
0.5
1.0
1.5
2.0
100 200 300 600 400 500
0
THD:VDD=2V
Cg=5pF
RL= 2.2kΩ
f=1kHz
vin=50mV
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
–4
–1
Common Source
Ta = 25°C
3
2SK3857MFV
2007-11-01
5
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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