DATASHEET ICL7673 FN3183 Rev 5.00 December 3, 2015 Automatic Battery Back-Up Switch The Intersil ICL7673 is a monolithic CMOS battery backup circuit that offers unique performance advantages over conventional means of switching to a backup supply. The ICL7673 is intended as a low-cost solution for the switching of systems between two power supplies; main and battery backup. The main application is keep-alive-battery power switching for use in volatile CMOS RAM memory systems and real time clocks. In many applications this circuit will represent a low insertion voltage loss between the supplies and load. This circuit features low current consumption, wide operating voltage range, and exceptionally low leakage between inputs. Logic outputs are provided that can be used to indicate which supply is connected and can also be used to increase the power switching capability of the circuit by driving external PNP transistors. Ordering Information PART NUMBER TEMP. RANGE (C) PACKAGE PKG. DWG. # ICL7673CPA No longer available or supported. Recommended Replacement ICL7673CPAZ 0 to 70 ICL7673CPAZ (See Note) 0 to 70 8 Ld PDIP* (Pb-free) E8.3 ICL7673CBA No longer available or supported. Recommended Replacement ICL7673CBAZA-T 0 to 70 8 Ld SOIC (N) M8.15 ICL7673CBAZA (See Note) 0 to 70 8 Ld SOIC (N) (Pb-free) M8.15 ICL7673CBAZA-T (See Note) 0 to 70 8 Ld SOIC (N) (Pb-free) M8.15 8 Ld PDIP E8.3 Features * Automatically Connects Output to the Greater of Either Input Supply Voltage * If Main Power to External Equipment is Lost, Circuit Will Automatically Connect Battery Backup * Reconnects Main Power When Restored * Logic Indicator Signaling Status of Main Power * Low Impedance Connection Switches * Low Internal Power Consumption * Wide Supply Range: . . . . . . . . . . . . . . . . . . . 2.5V to 15V * Low Leakage Between Inputs * External Transistors May Be Added if Very Large Currents Need to Be Switched * Pb-Free Plus Anneal Available (RoHS Compliant) Applications * On Board Battery Backup for Real-Time Clocks, Timers, or Volatile RAMs * Over/Under Voltage Detector * Peak Voltage Detector * Other Uses: - Portable Instruments, Portable Telephones, Line Operated Equipment Pinout ICL7673 (SOIC, PDIP) TOP VIEW *Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications. VO 1 8 VP VS 2 7 NC SBAR 3 6 PBAR GDN 4 5 NC NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. FN3183 Rev 5.00 December 3, 2015 Page 1 of 8 ICL7673 Functional Block Diagram VP VO P1 VS P2 SBAR + PBAR GND VP > VS , P1 SWITCH ON AND PBAR SWITCH ON VS > VP, P2 SWITCH ON AND SBAR SWITCH ON FN3183 Rev 5.00 December 3, 2015 Page 2 of 8 ICL7673 Absolute Maximum Ratings Thermal Information Input Supply (VP or VS) Voltage . . . . . . . . . . . . GND - 0.3V to +18V Output Voltages PBAR and SBAR . . . . . . . . . . . GND - 0.3V to +18V Peak Current Input VP (at VP = 5V) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . 38mA Input VS (at VS = 3V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA PBAR or SBAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Thermal Resistance (Typical, Note 2) JA (C/W) JC (C/W) PDIP Package* . . . . . . . . . . . . . . . . . . 150 N/A Plastic SOIC Package . . . . . . . . . . . . . 180 N/A Maximum Storage Temperature. . . . . . . . . . . . . . . . . -65C to 150C Maximum Lead Temperature (Soldering, 10sec). . . . . . . . . . . 300C (SOIC - Lead Tips Only) Operating Conditions *Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications. Temperature Range: ICL7673C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0C to 70C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Derate above 25C by 0.38mA/C. 2. JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25C Unless Otherwise Specified PARAMETER Input Voltage Quiescent Supply Current Switch Resistance P1 (Note 1) Temperature Coefficient of Switch Resistance P1 Switch Resistance P2 (Note 1) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS VP VS = 0V, ILOAD = 0mA 2.5 - 15 V VS VP = 0V, ILOAD = 0mA 2.5 - 15 V I+ VP = 0V, VS = 3V, ILOAD = 0mA - 1.5 5 A rDS(ON)P1 VP = 5V, VS = 3V, ILOAD = 15mA - 8 15 At TA = +85C - 16 - VP = 9V, VS = 3V, ILOAD = 15mA - 6 - VP = 12V, VS = 3V, ILOAD = 15mA - 5 - TC(P1) VP = 5V, VS = 3v, ILOAD = 15mA - 0.5 - %/C rDS(ON)P2 VP = 0V, VS = 3V, ILOAD = 1mA - 40 100 At TA = +85C - 60 - VP = 0V, VS = 5V, ILOAD = 1mA - 26 - VP = 0V, VS = 9V, ILOAD = 1mA - 16 - Temperature Coefficient of Switch Resistance P2 TC(P2) VP = 0V, VS = 3V, ILOAD = 1mA - 0.7 - %/C Leakage Current (VP to VS) IL(PS) VP = 5V, VS = 3V, ILOAD = 10mA - 0.01 20 nA At TA = +85C - 35 - nA VP = 0V, VS = 3V, ILOAD = 10mA - 0.01 50 nA at TA = +85C - 120 - nA VP = 5V, VS = 3V, ISINK = 3.2mA, ILOAD = 0mA - 85 400 mV At TA = 85C - 120 - mV VP = 9V, VS = 3V, ISINK = 3.2mA, ILOAD = 0mA - 50 - mV VP = 12V, VS = 3V, ISINK = 3.2mA ILOAD = 0mA - 40 - mV VP = 0V, VS = 3V, ISINK = 3.2mA, ILOAD = 0mA - 150 400 mV at TA = +85C - 210 - mV VP = 0V, VS = 5V, ISINK = 3.2mA ILOAD = 0mA - 85 - mV VP = 0V, VS = 9V, ISINK = 3.2mA ILOAD = 0mA - 50 - mV Leakage Current (VP to VS) Open Drain Output Saturation Voltages Open Drain Output Saturation Voltages FN3183 Rev 5.00 December 3, 2015 IL(SP) VOPBAR VOSBAR Page 3 of 8 ICL7673 Electrical Specifications TA = 25C Unless Otherwise Specified (Continued) PARAMETER SYMBOL Output Leakage Currents of PBAR and SBAR ILPBAR ILSBAR Switchover Uncertainty for Complete Switching of Inputs and Open Drain Outputs V P - VS TEST CONDITIONS MIN TYP MAX UNITS VP = 0V, VS = 15V, ILOAD = 0mA - 50 500 nA at TA = +85C - 900 - nA VP = 15V, VS = 0V, ILOAD = 0mA - 50 500 nA at TA = +85C - 900 - nA VS = 3V, ISINK = 3.2mA, ILOAD = 15mA - 10 50 mV NOTE: 3. The Minimum input to output voltage can be determined by multiplying the load current by the switch resistance. Typical Performance Curves 100 100 ILOAD = 1mA ON-RESISTANCE P2 () ON-RESISTANCE P1 () ILOAD = 15mA 10 10 1 1 0 2 4 6 8 10 12 14 16 0 2 INPUT VOLTAGE VP (V) FIGURE 1. ON-RESISTANCE SWITCH P1 AS A FUNCTION OF INPUT VOLTAGE VP 5 0.4 -40C 25C 85C 0.2 0 2 4 6 8 10 12 14 SUPPLY VOLTAGE (V) 16 FIGURE 3. SUPPLY CURRENT AS A FUNCTION OF SUPPLY VOLTAGE FN3183 Rev 5.00 December 3, 2015 OUTPUT SATURATION VOLTAGE (V) SUPPLY CURRENT (A) 0.6 8 10 FIGURE 2. ON-RESISTANCE SWITCH P2 AS A FUNCTION OF INPUT VOLTAGE VS 1 0.8 4 6 INPUT VOLTAGE VS VO = 5V VO = 9V VO = 3V 4 VO = 12V 3 2 VO = 15V 1 0 40 80 120 OUTPUT CURRENT (mA) 140 180 FIGURE 4. PBAR OR SBAR SATURATION VOLTAGE AS A FUNCTION OF OUTPUT CURRENT Page 4 of 8 ICL7673 low load currents the output voltage is nearly equal to the greater of the two inputs. The maximum voltage drop across switch P1 or P2 is 0.5V, since above this voltage the bodydrain parasitic diode will become forward biased. Complete switching of the inputs and open-drain outputs typically occurs in 50s. 1mA ILOAD = 10mA VS = 0V Input Voltage IS LEAKAGE CURRENT 100mA The input operating voltage range for VP or VS is 2.5V to 15V. The input supply voltage (VP or VS) slew rate should be limited to 2V per microsecond to avoid potential harm to the circuit. In line-operated systems, the rate-of-rise (or fall) of the supply is a function of power supply design. For battery applications it may be necessary to use a capacitor between the input and ground pins to limit the rate-of-rise of the supply voltage. A low-impedance capacitor such as a 0.047F disc ceramic can be used to reduce the rate-of-rise. 85C 10nA 1nA 1000pA Status Indicator Outputs 10pA 25C 1pA 0 2 4 5 6 INPUT VP (V) 8 10 12 FIGURE 5. IS LEAKAGE CURRENT VP TO VS AS A FUNCTION OF INPUT VOLTAGE Detailed Description As shown in the Functional Diagram, the ICL7673 includes a comparator which senses the input voltages VP and VS. The output of the comparator drives the first inverter and the open-drain N-Channel transistor PBAR . The first inverter drives a large P-Channel switch, P1, a second inverter, and another open-drain N-Channel transistor, SBAR . The second inverter drives another large P-Channel switch P2. The ICL7673, connected to a main and a backup power supply, will connect the supply of greater potential to its output. The circuit provides break-before-make switch action as it switches from main to backup power in the event of a main power supply failure. For proper operation, inputs VP and VS must not be allowed to float, and, the difference in the two supplies must be greater than 50mV. The leakage current through the reverse biased parasitic diode of switch P2 is very low. The N-Channel open drain output transistors can be used to indicate which supply is connected, or can be used to drive external PNP transistors to increase the power switching capability of the circuit. When using external PNP power transistors, the output current is limited by the beta and thermal characteristics of the power transistors. The application section details the use of external PNP transistors. Applications A typical discrete battery backup circuit is illustrated in Figure 6. This approach requires several components, substantial printed circuit board space, and high labor cost. It also consumes a fairly high quiescent current. The ICL7673 battery backup circuit, illustrated in Figure 7, will often replace such discrete designs and offer much better performance, higher reliability, and lower system manufacturing cost. A trickle charge system could be implemented with an additional resistor and diode as shown in Figure 8. A complete low power AC to regulated DC system can be implemented using the ICL7673 and ICL7663S micropower voltage regulator as shown in Figure 9. +5V PRIMARY DC POWER VO +5V OR +3V STATUS INDICATOR Output Voltage The output operating voltage range is 2.5V to 15V. The insertion loss between either input and the output is a function of load current, input voltage, and temperature. This is due to the P-Channels being operated in their triode region, and, the ON-resistance of the switches is a function of output voltage VO . The ON-resistance of the P-Channels have positive temperature coefficients, and therefore as temperature increases the insertion loss also increases. At FN3183 Rev 5.00 December 3, 2015 NiCAD BATTERY STACK GND FIGURE 6. DISCRETE BATTERY BACKUP CIRCUIT Page 5 of 8 ICL7673 A typical application, as illustrated in Figure 12, would be a microprocessor system requiring a 5V supply. In the event of primary supply failure, the system is powered down, and a 3V battery is employed to maintain clock or volatile memory data. The main and backup supplies are connected to VP and VS, with the circuit output VO supplying power to the clock or volatile memory. The ICL7673 will sense the main supply, when energized, to be of greater potential than VS and connect, via its internal MOS switches, VP to output VO. The backup input, VS will be disconnected internally. In the event of main supply failure, the circuit will sense that the backup supply is now the greater potential, disconnect VP from VO, and connect VS. Applications for the ICL7673 include volatile semiconductor memory storage systems, real-time clocks, timers, alarm systems, and over/under the voltage detectors. Other systems requiring DC power when the master AC line supply fails can also use the ICL7673. 8 +5V PRIMARY SUPPLY VP 2 LITHIUM BATTERY VO VS GND + Pbar 1 VO +5V OR +3V 6 RI STATUS INDICATOR 4 - GND Figure 11 illustrates the use of external PNP power transistors to increase the power switching capability of the circuit. In this application the output current is limited by the beta and thermal characteristics of the power transistors. FIGURE 7. ICL7673 BATTERY BACKUP CIRCUIT 8 +5V PRIMARY SUPPLY VP 1 VO If hysteresis is desired for a particular low power application, positive feedback can be applied between the input VP and open drain output SBAR through a resistor as illustrated in Figure 12. For high power applications hysteresis can be applied as shown in Figure 13. VO +5V OR +3V RC 2 RECHARGEABLE BATTERY + VS GND 4 The ICL7673 can also be used as a clipping circuit as illustrated in Figure 14. With high impedance loads the circuit output will be nearly equal to the greater of the two input signals. - GND FIGURE 8. APPLICATION REQUIRING RECHARGEABLE BATTERY BACKUP VP 8 FUSE BRIDGE RECTIFIER C1 120/240 VAC 8 2 ICL7663 REGULATOR 4 R2 R3 6 D1 R1 VS - STEPDOWN TRANSFORMER 2 + VO 1 ICL7673 BATTERY BACK-UP 4 BATTERY STACK GND FIGURE 9. POWER SUPPLY FOR LOW POWER PORTABLE AC TO DC SYSTEMS +5V MAIN POWER POWER FAIL DETECTOR MICROPROCESSOR VP VS VO INTERRUPT SIGNAL ICL7673 BACKUP CIRCUIT VOLATILE RAM + - FIGURE 10. TYPICAL MICROPROCESSOR MEMORY APPLICATION FN3183 Rev 5.00 December 3, 2015 Page 6 of 8 ICL7673 R2 PNP PNP VP MAIN SUPPLY 1 VO 8 VS ICL7673 6 2 3 GND + 3V BACKUP SUPPLY R1 R4 NC P- EXTERNAL EQUIPMENT R3 (NOTE 4) S- - NOTE 4. > 1MW FIGURE 11. HIGH CURRENT BATTERY BACKUP SYSTEM RF RS MAIN SUPPLY VP VO 8 ICL7673 VS BATTERY BACKUP S2 + 3 GND - GND GND FIGURE 12. LOW CURRENT BATTERY BACKUP SYSTEM WITH HYSTERESIS R2 PNP PNP RF R1 +V MAIN SUPPLY RS VP 8 VS + MAIN SUPPLY GND - 2 NC 1 ICL7673 6 4 R4 P- R3 S- EXTERNAL EQUIPMENT 3 BACKUP SUPPLY FIGURE 13. HIGH CURRENT BACKUP SYSTEM WITH HYSTERESIS FN3183 Rev 5.00 December 3, 2015 Page 7 of 8 ICL7673 VP VP VO ICL7673 VS VS GND VO FIGURE 14. CLIPPLING CIRCUITS Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION December 3, 2015 FN3183.5 CHANGE Added Revision History beginning with Rev 5. Added About Intersil Verbiage. Updated Ordering Information on page 1 About Intersil Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets. For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page found at www.intersil.com. You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask. Reliability reports are also available from our website at www.intersil.com/support (c) Copyright Intersil Americas LLC 1999-2015. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN3183 Rev 5.00 December 3, 2015 Page 8 of 8