Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 -0.05 0.16+0.10 -0.06 0.40.2 2 1 (0.95) (0.95) 1.90.1 (0.65) * Optimum for RF amplification of FM/AM radios * High transition frequency fT * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 5 1.50+0.25 -0.05 Features 2.8+0.2 -0.3 3 2.90+0.20 -0.05 Rating Unit VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 1.1+0.2 -0.1 Symbol 0 to 0.1 Parameter Collector-base voltage (Emitter open) 1.1+0.3 -0.1 10 Absolute Maximum Ratings Ta = 25C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: V Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Forward current transfer ratio * hFE VCB = 10 V, IE = -1 mA 70 0.1 A 220 Transition frequency fT VCB = 10 V, IE = -1 mA, f = 200 MHz 150 Noise figure NF VCB = 10 V, IE = -1 mA, f = 5 MHz Reverse transfer impedance Zrb VCB = 10 V, IE = -1 mA, f = 2 MHz 22 50 Reverse transfer capacitance (Common emitter) Cre VCB = 10 V, IE = -1 mA, f = 10.7 MHz 0.9 1.5 pF 250 2.8 MHz 4.0 dB Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank B C hFE 70 to 140 110 to 220 Publication date: March 2003 SJC00112BED 1 2SC2295 PC Ta IC VCE Ta = 25C 120 80 40 80 120 60 A 6 4 40 A 2 20 A 0 160 80 A 8 0 Ambient temperature Ta (C) 6 12 IB VBE Collector current IC (mA) Base current IB (A) 80 60 40 25C 40 Ta = 75C 20 0 0.8 1.0 0 hFE IC 200 Ta = 75C 25C 120 -25C 80 1.2 1 10 Collector current IC (mA) 100 1.6 2.0 100 VCB = 10 V f = 100 MHz Ta = 25C -10 Emitter current IE (mA) SJC00112BED 100 IC / IB = 10 10 1 Ta = 75C 25C 0.1 0.01 0.1 -25C 1 10 100 Zrb IE 200 -1 80 Collector current IC (mA) 300 0 - 0.1 60 60 40 0 0.1 40 100 fT I E VCE = 10 V 160 0.8 400 Transition frequency fT (MHz) Forward current transfer ratio hFE 240 0.4 20 Base current IB (A) Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) 2 -25C 30 10 20 0.6 0 VCE(sat) IC 50 100 0.4 0 18 VCE = 10 V VCE = 10 V Ta = 25C 0.2 5.0 IC VBE 60 0 7.5 Collector-emitter voltage VCE (V) 120 0 10.0 2.5 Collector-emitter saturation voltage VCE(sat) (V) 40 12.5 -100 Reverse transfer impedance Zrb () 0 VCE = 10 V Ta = 25C IB = 100 A 10 160 15.0 Collector current IC (mA) 200 0 IC I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 240 VCB = 10 V f = 2 MHz Ta = 25C 50 40 30 20 10 0 - 0.1 -1 Emitter current IE (mA) -10 2SC2295 NF IE 10 2.0 IC = 3 mA 1 mA 1.5 1.0 8 6 4 Vie = gie + jbie VCE = 10 V 20 2 0.5 1 10 0 - 0.1 100 -1 bre gre f = 10.7 MHz - 0.1 IE = -1 mA - 0.2 - 0.3 58 - 0.4 100 - 0.5 - 0.6 - 0.5 f = 10.7 MHz - 0.1 mA 58 -1 mA 100 -20 - 0.3 - 0.2 - 0.1 0 8 f = 10.7 MHz 0 8 Reverse transfer conductance gre (mS) 16 24 32 40 boe goe 1.2 10.7 yoe = goe + jboe VCE = 10 V 1.0 -2 mA 100 -40 IE = -4 mA -60 58 100 -80 -120 58 Input conductance gie (mS) 58 -100 - 0.4 100 -2 mA bfe gfe 0 Forward transfer susceptance bfe (mS) yre = gre + jbre VCE = 10 V 12 Emitter current IE (mA) Collector-emitter voltage VCE (V) 0 16 0 -10 -7 mA -4 mA 4 Output susceptance boe (mS) 0 0.1 Reverse transfer susceptance bre (mS) 24 IE = -1 mA 2.5 bie gie VCB = 6 V f = 100 MHz Rg = 50 Ta = 25C f = 10.7 MHz Ta = 25C Noise figure NF (dB) Reverse transfer capacitance Cre (pF) (Common emitter) 12 Input susceptance bie (mS) Cre VCE 3.0 yfe = gfe + jbfe VCE = 10 V 0 20 40 60 80 100 Forward transfer conductance gfe (mS) SJC00112BED IE = -1 mA 100 0.8 0.6 58 0.4 0.2 f = 10.7 MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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