MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM6472-60SL
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DIST ORTION HIGH GAIN
IM3=-45 dBc at Pout= 36.5dBm G1dB=7.5dB at 6.4GHz to 7.2GHz
Single Carrier Level BROAD BAND INTERNALLY MATCHED FET
HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=48.0dBm at 6.4GHz to 7.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 47.0 48.0 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 6.5 7.5 ⎯
Drain Current IDS1 A ⎯ 13.2 15.0
Gain Flatness ΔG dB ⎯ ⎯ ±0.8
Power Added Efficiency ηadd
VDS=10V
f = 6.4 to 7.2GHz
IDSset≅9.5A
% ⎯ 39 ⎯
3rd Order Intermodulation
Distortion IM3 dBc -42 -45
⎯
Drain Current IDS2
Two-Tone Test
Po=36.5dBm
(Single Carrier Level) A ⎯ ⎯ 11.8
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c) °C ⎯ ⎯ 100
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
I
DS= 12.0A S ⎯ 20 ⎯
Pinch-off Voltage VGSoff V
DS= 3V
I
DS= 200mA V -1.0 -1.8 -3.0
Saturated Drain Current IDSS V
DS= 3V
V
GS= 0V A ⎯ 38 ⎯
Gate-Source Breakdown
Voltage VGSO I
GS= -1.0mA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 0.6 0.8
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Aug. 2008
TIM6472-60SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 20
Total Power Dissipation (Tc= 25 °C) PT W 187.5
Channel Temperature Tch °C 175
Storage Temperature Tstg °C -65 to +175
PACKAGE OUTLINE (2-16G1B)
2
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time s hould not exceed 10 seconds
at 260°C.
TIM6472-60SL
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=10V
IDS≅13.2A
Pin=40.5dBm
3
49
48
47
6.4 6.8 7.2
Pout(dBm)
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=7.2GHz
VDS=10V
IDSset≅9.5A
Pout
ηadd
51
50
49
48
47
46
45
44
43
42
Pout(dBm)
90
80
70
60
50
40
30
20
ηadd(%)
34 36 38 40 42 44
Pin(dBm)
TIM6472-60SL
Power Dissipation(PT) vs. Case Temperature(Tc)
200
100
0
4
PT(W)
40 80 120 160
200
0 Tc( °C )
IM3 vs. Power Characteristics
-10
VDS=10V
IDSset≅9.5A
freq.=7.2GHz
Δf=5MHz
-20
-30
IM3(dBc)
-40
-50
-60 34
36 32 38 40 42
Pout(dBm) @Single carrier level
