Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
1
1
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DC-0012557
1
Features
Output Combs to 40+ GHz
Transition Times down to 35 ps
Screening per MIL-PRF-19500 and MIL-PRF-
38534 available
Description
The diodes feature fully passivated, true mesa
construction for sharp transitions and improved
stability. The beam lead SRDs have the industry’s
fastest transition times for millimeter wave
multiplication and picoseconds pulse forming.
Chip & Beam Lead Electrical Specifications: TA = 25°C
Model
Voltage
Breakdown
(VB)
Junction
Capacitance
(CJ)
Lifetime
(t)
Transition
Time
(tt)
Frequency
Cutoff
(FCO)
Theta
(θJC)
V pF ns ps GHz °C/W
Min. Min. Max. Min. Typ. Typ. Max. Typ. Max.
Chip
MMD805-C12 60 2.5 3.5 80 100 250 300 130 15
MMD810-C12 50 1.5 2.5 40 70 200 250 200 22
MMD820-C12 40 1.0 1.7 30 60 80 100 390 25
MMD830-C11 25 0.5 1.0 15 30 60 80 700 45
MMD832-C11 20 0.4 0.8 10 15 60 80 660 50
MMD835-C11 15 0.3 0.7 10 20 60 70 800 60
MMD837-C11 20 0.2 0.4 5 10 60 70 1300 60
MMD840-C11 15 0.2 0.4 7 15 60 70 880 60
Beam Lead
MMDB30-B11 14 0.15 0.25 1 4 30 38 530 600
MMDB35-B11 16 0.13 0.20 1 4 35 45 482 600
MMDB45-B11 25 0.11 0.20 3 8 45 58 410 600
Test Conditions:
VB: IR = 10 µA
CJ: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for Chip: IF = 10 mA, VR = 10 V
tt: for Beam Lead: IF = 3 mA, VR = 7 V
FCO: 1/2πRS
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
2
2
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DC-0012557
2
Parameters Rating
Reverse Voltage Rated VBR
Forward Current Chip = 150 mA
Beam Lead = 50 mA
CW Power Dissipation 150°C / θJC @ +25°C,
derate linearly to zero @ THSK = +175°C
Operating / Storage Temperature -65°C to +175°C
Mounting / Bonding Temperature Chip = +310°C for 30 seconds
Beam Lead = +235°C for 10 seconds
Absolute Maximum Ratings
Chip & Beam Lead Outline Drawings
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
3
3
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DC-0012557
3
Ceramic Packaged Electrical Specifications: TA = 25°C
Model
Voltage
Breakdown
(VB)
Total
Capacitance
(CT)
Lifetime
(t)
Transition
Time
(tt) Package
V pF ns ps
Min. Min. Max. Min. Typ. Typ. Max.
MMD805- 60 80 100 250 300
2.57 3.57 E25
2.58 3.58 E28 / 28X
2.68 3.68 H20
2.68 3.68 T86
2.75 3.75 T89
2.56 3.56 0805-2
MMD810- 50
1.58 2.58
40 70 200 250
E28 / 28X
1.68 2.68 H20
1.68 2.68 T86
1.75 2.75 T89
MMD820- 40
1.08 1.78
30 60 80 100
E28 / 28X
1.18 1.88 H20
1.18 1.88 T86
1.06 1.76 0805-2
MMD830- 25
0.58 1.08
15 30 60 80
E28 / 28X
0.68 1.18 H20
0.68 1.18 T86
0.56 1.06 0805-2
MMD832- 20
0.48 0.88
10 15 60 80
E28 / 28X
0.58 0.98 H20
0.58 0.98 T86
0.46 0.86 0805-2
MMD835- 15
0.38 0.88
10 20 50 70
E28 / 28X
0.42 0.92 H20
0.48 0.98 T86
0.36 0.86 0805-2
Test Conditions:
VB: IR = 10 µA
CT: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for MMD805 - MMD840: IF = 10 mA, VR = 10 V
tt: for MMDB30 - MMDB45: IF = 3 mA, VR = 7 V (Continued next page)
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
4
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
https://www.macom.com/support
DC-0012557
4
Ceramic Packaged Electrical Specifications: TA = 25°C
Model
Voltage
Breakdown
(VB)
Total
Capacitance
(CT)
Lifetime
(t)
Transition
Time
(tt) Package
V pF ns ps
Min. Min. Max. Min. Typ. Typ. Max.
MMD837- 20
0.28 0.48
5 10 50 70
E28 / 28X
0.32 0.52 H27
0.38 0.58 T86
0.26 0.46 805-2
MMD840- 15
0.28 0.48
7 15 50 70
E28 / 28X
0.32 0.52 H27
0.38 0.58 T86
0.26 0.46 0805-2
MMDB30- 14
0.23 0.33
1 4 30 38
E28 / 28X
0.20 0.30 0402
0.21 0.31 0805-2
MMDB35- 16
0.21 0.28
1 4 35 45
E28 / 28X
0.18 0.22 0402
0.19 0.26 0805-2
MMDB45- 25
0.19 0.28
3 8 45 58
E28 / 28X
0.16 0.25 0402
0.17 0.26 0805-2
Test Conditions:
VB: IR = 10 µA
CT: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for MMD805 - MMD840: IF = 10 mA, VR = 10 V
tt: for MMDB30 - MMDB45: IF = 3 mA, VR = 7 V
Parameters Rating
Reverse Voltage Rated VBR
Forward Current MMD = 150 mA
MMDB = 50 mA
Operating / Storage Temperature -65°C to +175°C
Mounting / Bonding Temperature +260°C peak per JEDEC J-STD-20C
Absolute Maximum Ratings
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
5
5
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DC-0012557
5
Ceramic Outline Drawings: Dimension = mils (mm)
(Continued next page)
Capacitance (CP) = 0.08 pF
Inductance (LP) = 0.4 nH
Capacitance (CP) = 0.07 pF
Inductance (LP) = 0.4 nH
E25 E25
E28X H20
H27
Capacitance (CP) = 0.08 pF
Inductance (LP) = 0.4 nH
Capacitance (CP) = 0.18 pF
Inductance (LP) = 0.5 nH
Capacitance (CP) = 0.12 pF
Inductance (LP) = 0.4 nH
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
6
6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
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DC-0012557
6
Ceramic Outline Drawings: Dimension = mils (mm)
T86 T89
0402 0805-2
Capacitance (CP) = 0.18 pF
Inductance (LP) = 1.0 nH
Capacitance (CP) = 0.25 pF
Inductance (LP) = 0.4 nH
Capacitance (CP) = 0.05 pF
Inductance (LP) = 0.2 nH
Capacitance (CP) = 0.06 pF
Inductance (LP) = 0.4 nH
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
7
7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
https://www.macom.com/support
DC-0012557
7
Test Conditions:
VB: IR = 10 µA
CT: for MMD0151 & MMD0153: VR = 6 V, 1 MHz
CT: for MMD0803 - MMD0840: VR = 10 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for MMD0803 - MMD0825: IF = 10 mA, VR = 10 V
tt: for MMD0151, MMD0153, MMD0833, MMD0840: chip data packaged limits to 100 ps
Glass Packaged Electrical Specifications: TA = 25°C
Glass Outline Drawing
Model #
(-package)
Voltage
Breakdown
(VB)
Total
Capacitance
(CT)
Lifetime
(t)
Transition
Time
(tt) Package
V pF ns ps
Min. Typ. Max. Min. Typ. Typ. Max.
MMD0151- 15 0.70 0.80 10 15 100
A15
MMD0153- 25 0.45 0.55 10 15 95
MMD0803- 70 4.15 6.15 200 250 275 400
MMD0815- 50 3.15 4.15 100 135 180 320
MMD0825- 45 1.15 2.15 30 50 130 160
MMD0833- 25 1.75 1.80 10 15 90
MMD0840- 15 0.60 0.75 10 20 75
Parameters Rating
Reverse Voltage Rated VBR
Forward Current 100 mA
Thermal Resistance, Junction to Case +600°C/W
Operating / Storage Temperature -65°C to +200°C
Mounting / Bonding Temperature +230°C for 10 seconds
Absolute Maximum Ratings
Capacitance (CP) = 0.15 pF
Inductance (LP) = 2.5 nH
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
8
8
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0012557
8
Plastic Packaged Electrical Specifications: TA = 25°C
Model
Voltage
Breakdown
(VB)
Junction
Capacitance
(CJ)
Lifetime
(t)
Transition
Time
(tt) Package
V pF ns ps
Min. Min. Max. Min. Typ. Typ. Max.
SMMD805- 60 2.5 3.5 80 100 250 300 SOT23 (-0S, -1S)
SOD323
SMMD810- 50 1.5 2.5 40 70 200 250 SOT23 (-0S, -1S)
SOD323
SMMD820- 40 1.0 1.7 30 60 110 125 SOT23 (-0S, -1S)
SOD323
SMMD830- 25 0.5 1.0 15 30 90 110 SOT23 (-0S, -1S)
SOD323
SMMD832- 20 0.4 0.8 10 85 100 SOT23 (-0S, -1S)
20 SOD323
SMMD835- 20 0.3 0.7 10 15 80 100 SOT23 (-0S, -1S)
SOD323
SMMD837 20 0.2 0.4 5 12 75 90 SOT23 (-0S, -1S)
SOD323
SMMD840- 15 0.2 0.4 5 10 70 90 SOT23 (-0S, -1S)
SOD323
Test Conditions:
VB: IR = 10 µA
CJ: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt:IF = 10 mA, VR = 10 V
Parameters Rating
Reverse Voltage Rated VBR
Forward Current 100 mA
Power Dissipation 250 mW, derate linearly to zero @ TA = +150°C
Operating / Storage Temperature -65°C to +150°C
Mounting / Bonding Temperature +260°C peak per JEDEC J-STD-20C
Absolute Maximum Ratings
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
9
9
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
https://www.macom.com/support
DC-0012557
9
Plastic Outline Drawings
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
10
10
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
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DC-0012557
10
Typical Performance Curves: TA = 25°C
Transition Time vs. Drive Transition Time vs. Forward Current
Transition Time Test Circuit
Silicon Step Recovery Diodes
Rev. V2
MMDx & SMMDx Series
11
11
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0012557
11
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