HSMP-381Z, HSMP-386Z, HSMP-389Z
PIN Diode
Reliability Data Sheet
Description
The following data was gathered from the product
qualification and reliability monitoring for HSMP-389Z.
The reliability of HSMP-389Z can be cross referenced
to HSMP-381Z and HSMP-386Z based on similarity in
package assembly process. The product was subjected
to severe environmental conditions and electrical stress
to the minimum reliability expectations of today’s RF
requirement.
Reliability Prediction Model
An exponential cumulative failure function (constant
failure rate) was used as the reliability prediction model
to predict failure rate and mean time to failure (MTTF)
Table 2. Estimates for various channel temperatures are as follows:
The following are the failure criterions used,
Id >20%
RS and CT >20%
Table 1. Life Tests Demonstrated Performance
Test Name Stress Test Condition Total Units Tested Total Device Hours No. of Failed Units
High Temperature
Operating Life
Tch = 150°C DC Bias 180 180,000 0
Channel Temp.
(°C) [2]
Point Typical Performance
MTTF hours[1]
90% Confidence
MTTF hours
Point Typical
Performance FIT
90% Confidence
FIT
150 1.80 X 1057.809 X 1045555.6 12805.6
125 1.42 X 1066.176 X 105702.5 1619.2
100 1.49 X 1076.444 X 10667.3 155.2
85 7.10 X 1073.080 X 10714.1 32.5
[1] Point MTTF is simply the total device hours divided by the number of failures. However, in cases for which no failures are observed, the
point estimate is calculated under the assumption that one unit failed.
[2] Thermal Resistance: θch-b = 135oC/W
at various temperatures as shown in Table 2. The
wearout mechanisms are therefore not considered.
The Arrhenius temperature de-rating equation is used.
Avago Technologies assumes no failure mechanism
change between stress and use conditions. Bias and
temperature are alterable stresses and must be
considered with the thermal resistance of the devices
when determining the stress condition. The failure rate
will have a direct relationship to the life stress. The
process was tested to determine an activation energy
of 1.2eV. Confidence intervals are based upon the chi-
squared prediction method associated with
exponential distribution.
Table 3. Product Qualification – Operational Life Test Results
Stress Conditions Duration Failures/number tested
High Temperature Operating Life
(HTOL)
Vf = 0.7V with channel
temperature of 150 C.
1000 hours 0/180
Wet & High Temperature Reverse Bias
(WHTRB)
85°C/85% RH, Vr = 80%Vbr 1000 hours 0/180
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
AV01-0050EN - March 15, 2006
Table 4. Product Qualification – Unbiased Environment Stress Results
Table 5. Electrostatic Discharge (ESD) Test Results
HSMP-381Z
HSMP-386Z
HSMP-389Z
Stress Conditions Duration Failures/number tested
Temperature Cycle -65°C /150°C, 10 minutes dwell 500 cycles 0/180
Low Temperature Storage Life -40°C 1000hrs 0/177
Autoclave 121°C/100%RH, 15psig 168hrs 0/180
Solderability 16hrs steam aging, solder dipping at 245°C 5 sec 0/30
ESD Test Reference: Results
Human Body Model JESD22-A114-C 700V (Class 1B)
Machine Model JESD22-A115-A 180V (Class A)
ESD Test Reference: Results
Human Body Model JESD22-A114-C 700V (Class 1B)
Machine Model JESD22-A115-A 180V (Class A)
ESD Test Reference: Results
Human Body Model JESD22-A114-C 450V (Class 1A)
Machine Model JESD22-A115-A 160V (Class A)
ESD Sensitivity
The device is classified as ESD sensitive.
The following precautions should be taken:
1. Ensure Faraday cage or conductive shield bag is
used when the device is transported from one
destination to another.
2. At SMT assembly station, if the static charge is
above the device sensitivity level, place an ionizer
near to the device for charge neutralization
purpose.
3. Personal grounding has to be worn at all time when
handling the device.
Moisture Sensitivity Level: Level 1
Preconditioning per JESD22-A113-D Level 1 was
performed on all devices prior to reliability testing.
HBM
Class 0 is ESD voltage level < 240V, Class 1A is voltage
level between 250V and 500V, Class 1B is voltage level
between 500V and 1000V, Class 1C is voltage level
between 1000V and 2000V, Class 2 is voltage level
between 2000V and 4000V, Class 3A is voltage level
between 4000V and 8000V, Class 3B is voltage level >
8000V.
MM
Class A is ESD voltage level <200V, Class B is voltage
level between 200V and 400V, Class C is voltage level
> 400V.
