POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
Three Phase PSD 162 IdAV = 175 A
Rectifier Bridges VRRM = 800-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
800 800 PSD 162/08
1200 1200 PSD 162/12
1400 1400 PSD 162/14
1600 1600 PSD 162/16
1800 1800 PSD 162/18
Symbol Test Conditions Maximum Ratings
IdAV TC = 90°C, module 175 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A
VR = 0 t = 8.3 ms (60 Hz), sine 1950 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1600 A
VR = 0 t = 8.3 ms (60 Hz), sine 1800 A
∫ i2 dt TVJ = 45°C t = 10 ms (50 Hz), sine 16200 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 16200 A2 s
TVJ = TVJM t = 10 ms (50 Hz), sine 12800 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 13400 A2 s
TVJ -40 ... + 150 °C
TVJM 150 °C
Tstg -40 ... + 125 °C
VISOL 50/60 HZ, RMS t = 1 min 2500 V ∼
IISOL ≤ 1 mA t = 1 s 3000 V ∼
Md Mounting torque (M6) 5 Nm
Terminal connection torque (M6) 5 Nm
Weight typ. 270 g
Symbol Test Conditions Characteristic Value
IR VR = VRRM T
VJ = 25°C ≤ 0.3 mA
VR = VRRM T
VJ = TVJM ≤ 5 mA
VF IF = 300 A TVJ = 25°C ≤ 1.55 V
VTO For power-loss calculations only 0.8 V
rT TVJ = TVJM 3
mΩ
RthJC per diode; DC current 0.65 K/W
per module 0.108 K/W
RthJK per diode; DC current 0.83 K/W
per module 0.138 K/W
dS Creeping distance on surface 10.0 mm
dA Creeping distance in air 9.4 mm
a Max. allowable acceleration 50 m/s2
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
~
~
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PSD 162
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
T = 150°C
vj
T = 25°C
vj
20.5 1.5
1
V [V]
F
0
I
F
50
100
200
150
[A]
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
1800 1600
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
3
4
5
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
1751257525
0
100
200
300
400
500
600 70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
0.87
0.37
0.2
0.12
0.08 0.04 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSD 162
Fig. 4 Power dissipation versus direct output current and ambient
temperature
50 100 150 200
0
25
50
75
100
125
150
200
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case temperature
0.01 0.1 110
0.2
0.4
0.6
0.8
1
K/W
Zth
t[s]
ZthJK
ZthJC
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
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